公开(公告)号：US20120138898A1

公开(公告)日：2012-06-07

申请号：US13310522

申请日：2011-12-02

申请人： Masahiko HATA ,  Tomoyuki TAKADA ,  Sadanori YAMANAKA ,  Taro ITATANI

发明人： Masahiko HATA ,  Tomoyuki TAKADA ,  Sadanori YAMANAKA ,  Taro ITATANI

IPC分类号： H01L31/0352

CPC分类号： H01L27/1446 ,  G01J5/024 ,  H01L31/0392 ,  H01L31/0543 ,  H01L31/1035 ,  H01L31/1852 ,  Y02E10/52 ,  Y02E10/544 ,  Y02P70/521

摘要： A sensor includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat, where the photothermal absorber outputs an electric signal in response to incident light to be introduced into the photothermal absorber or heat to be applied to the photothermal absorber. A semiconductor wafer includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat.

摘要翻译： 传感器包括：含有硅的基底晶片; 种子构件直接或间接地设置在基底晶片上; 以及由第3-5族化合物半导体晶格匹配或伪晶格匹配种子构件并且能够在吸收光或热时产生载体的光热吸收体，其中光热吸收体输出响应于 入射到光热吸收器中的入射光或被加到光热吸收器上的热量。 半导体晶片包括：含有硅的基底晶片; 种子构件直接或间接地设置在基底晶片上; 以及由3-5族化合物半导体晶格匹配或伪晶格匹配种子构件制成并且能够在吸收光或热时产生载体的光热吸收剂。

公开(公告)号：US20120074463A1

公开(公告)日：2012-03-29

申请号：US13310614

申请日：2011-12-02

申请人： Masahiko HATA ,  Taro ITATANI

发明人： Masahiko HATA ,  Taro ITATANI

IPC分类号： H01L31/0264 ,  H01L21/20 ,  H01L31/18 ,  H01L29/12

CPC分类号： H01L31/0522 ,  H01L27/142 ,  H01L31/028 ,  H01L31/03046 ,  H01L31/0392 ,  H01L31/0475 ,  H01L31/0543 ,  H01L31/0687 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1852 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： Provided is a semiconductor wafer including: a base wafer containing silicon; an inhibitor that has been formed on the base wafer, has an aperture in which a surface of the base wafer is exposed, and inhibits crystal growth; and a light-absorptive structure that has been formed inside the aperture in contact with a surface of the base wafer exposed inside the aperture, where the light-absorptive structure includes a first semiconductor and a second semiconductor.

摘要翻译： 提供一种半导体晶片，其包括：含有硅的基底晶片; 已经形成在基底晶片上的抑制剂具有露出基底晶片的表面的孔，并抑制晶体生长; 以及已经形成在所述孔内的与所述孔内露出的所述基底晶片的表面接触的光吸收结构，其中所述光吸收结构包括第一半导体和第二半导体。