公开(公告)号：US20060214088A1

公开(公告)日：2006-09-28

申请号：US11374119

申请日：2006-03-14

申请人： Masahiro Furusawa ,  Ichio Yudasaka ,  Hideki Tanaka ,  Tsutomu Miyamoto ,  Hideo Shimamura

发明人： Masahiro Furusawa ,  Ichio Yudasaka ,  Hideki Tanaka ,  Tsutomu Miyamoto ,  Hideo Shimamura

IPC分类号： G01J1/42

CPC分类号： H01L31/077 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A method for manufacturing a photoelectric transducer, comprising: forming a first electrode on a substrate; forming a first conductivity-type semiconductor layer on the first electrode; forming an I type semiconductor layer on the first conductivity-type semiconductor layer; forming on the I type semiconductor layer a second conductivity-type semiconductor layer that is different from the first conductivity-type; and forming a second electrode on the second conductivity-type semiconductor layer, wherein the forming of the I type semiconductor layer includes: forming a precursor film of the I type semiconductor layer on the first conductivity-type semiconductor layer by arranging droplets containing a silicon compound in an island shape; and converting the precursor film into the I type semiconductor layer by carrying out heat treatment or photoirradiation treatment to the precursor film.

公开(公告)号：US07524718B2

公开(公告)日：2009-04-28

申请号：US11374119

申请日：2006-03-14

申请人： Masahiro Furusawa ,  Ichio Yudasaka ,  Hideki Tanaka ,  Tsutomu Miyamoto ,  Hideo Shimamura

发明人： Masahiro Furusawa ,  Ichio Yudasaka ,  Hideki Tanaka ,  Tsutomu Miyamoto ,  Hideo Shimamura

IPC分类号： H01L21/8238

CPC分类号： H01L31/077 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A method for manufacturing a photoelectric transducer, comprising: forming a first electrode on a substrate; forming a first conductivity-type semiconductor layer on the first electrode; forming an I type semiconductor layer on the first conductivity-type semiconductor layer; forming on the I type semiconductor layer a second conductivity-type semiconductor layer that is different from the first conductivity-type; and forming a second electrode on the second conductivity-type semiconductor layer, wherein the forming of the I type semiconductor layer includes: forming a precursor film of the I type semiconductor layer on the first conductivity-type semiconductor layer by arranging droplets containing a silicon compound in an island shape; and converting the precursor film into the I type semiconductor layer by carrying out heat treatment or photoirradiation treatment to the precursor film.

摘要翻译： 一种光电转换器的制造方法，包括：在基板上形成第一电极; 在所述第一电极上形成第一导电型半导体层; 在所述第一导电型半导体层上形成I型半导体层; 在所述I型半导体层上形成与所述第一导电型不同的第二导电型半导体层; 以及在所述第二导电型半导体层上形成第二电极，其中所述I型半导体层的形成包括：通过布置含有硅化合物的液滴，在所述第一导电型半导体层上形成所述I型半导体层的前体膜 在一个岛屿形状; 并通过对前体膜进行热处理或光照射处理将前体膜转变成I型半导体层。

公开(公告)号：US08443753B2

公开(公告)日：2013-05-21

申请号：US12035663

申请日：2008-02-22

申请人： Hideki Tanaka ,  Hideo Shimamura

发明人： Hideki Tanaka ,  Hideo Shimamura

IPC分类号： B05B3/00 ,  B05B7/16 ,  B05C5/00 ,  B05D1/02

CPC分类号： B41J11/0015 ,  B05B13/0447

摘要： A film forming apparatus includes a processing chamber defined by walls, an application preparation room in which an applicator is temporary provided, a first carrier transporting the applicator from the application preparation room to the processing chamber, a stage on which a substrate is disposed and a maintenance part disposed adjacent to the application preparation room. A liquid is applied from the applicator onto the substrate to form a film on the substrate.

摘要翻译： 一种成膜设备包括由壁限定的处理室，其中临时设置施用器的施用准备室，将施用器从施用准备室输送到处理室的第一载体，设置基板的阶段和 维修部分靠近应用准备室。 将液体从施加器施加到基底上以在基底上形成膜。

公开(公告)号：US07843540B2

公开(公告)日：2010-11-30

申请号：US11332147

申请日：2006-01-17

申请人： Kinya Ozawa ,  Hideo Shimamura

发明人： Kinya Ozawa ,  Hideo Shimamura

IPC分类号： G02F1/1343

CPC分类号： G02F1/134363 ,  G02F1/133553 ,  G02F1/13731 ,  G02F1/1393 ,  G02F2001/133541 ,  G02F2001/13775

摘要： A liquid crystal display device of the present invention is a liquid crystal display device having a first substrate, a second substrate, a liquid crystal layer disposed between the first and second substrates, and a plurality of pixels each having a display region, in that: the liquid crystal layer is optically isotropic when an selective electric field is not applied and optically aisotropic when an electric field is applied and includes a material whose refractive index changes depending on the strength of the electric field; and the plurality of pixels include first and second pixels different in the electric field strength.

摘要翻译： 本发明的液晶显示装置是具有第一基板，第二基板，配置在第一基板和第二基板之间的液晶层的液晶显示装置，以及具有显示区域的多个像素，其特征在于： 当施加选择性电场时，液晶层是光学各向同性的，并且当施加电场时具有光学各向异性，并且包括折射率随着电场强度而变化的材料; 并且所述多个像素包括不同于电场强度的第一和第二像素。

公开(公告)号：US20060203169A1

公开(公告)日：2006-09-14

申请号：US11332147

申请日：2006-01-17

申请人： Kinya Ozawa ,  Hideo Shimamura

发明人： Kinya Ozawa ,  Hideo Shimamura

IPC分类号： G02F1/1343

CPC分类号： G02F1/134363 ,  G02F1/133553 ,  G02F1/13731 ,  G02F1/1393 ,  G02F2001/133541 ,  G02F2001/13775

摘要： A liquid crystal display device of the present invention is a liquid crystal display device having a first substrate, a second substrate, a liquid crystal layer disposed between the first and second substrates, and a plurality of pixels each having a display region, in that: the liquid crystal layer is optically isotropic when an selective electric field is not applied and optically aisotropic when an electric field is applied and includes a material whose refractive index changes depending on the strength of the electric field; and the plurality of pixels include first and second pixels different in the electric field strength.

摘要翻译： 本发明的液晶显示装置是具有第一基板，第二基板，配置在第一基板和第二基板之间的液晶层的液晶显示装置，以及具有显示区域的多个像素，其特征在于： 当施加选择性电场时，液晶层是光学各向同性的，并且当施加电场时具有光学各向异性，并且包括折射率随着电场强度而变化的材料; 并且所述多个像素包括不同于电场强度的第一和第二像素。