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公开(公告)号:US20120216382A1
公开(公告)日:2012-08-30
申请号:US13367390
申请日:2012-02-07
IPC分类号: B23P11/00
CPC分类号: G21C21/00 , F04F5/04 , G21C13/02 , G21C15/25 , Y02E30/40 , Y10T29/49764 , Y10T29/49771
摘要: A method of installing a jet pump beam includes, disposing an inlet mixer having one end portion inserted to a diffuser provided in a reactor pressure vessel and an other end portion communicated with a riser pipe disposed in the reactor pressure vessel between a pair of projecting portions of a transition piece provided to the riser pipe, separately inserting both end portions of a jet pump beam disposed above the inlet mixer into a groove formed in each of the pair of projecting portions, arching the jet pump beam by moving a center portion of the jet pump beam upward, pushing a screw member engaged with the arched jet pump beam against the inlet mixer, and measuring deflection amount of the arched jet pump beam when the screw member is being pushed against the inlet mixer.
摘要翻译: 一种安装喷射泵梁的方法包括:设置入口混合器,该入口混合器具有一个端部插入到设置在反应堆压力容器中的扩散器中,另一端部与设置在反应堆压力容器中的提升管连通在一对突出部分 设置在提升管上的过渡件,将设置在入口混合器上方的喷射泵梁的两个端部分别插入形成在一对突出部分中的每一个中的槽中,通过移动该喷射泵梁的中心部分 喷射泵向上推动,将与拱形喷射泵梁接合的螺钉构件推向入口混合器,并且当螺钉构件被推入入口混合器时测量拱形喷射泵梁的偏转量。
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公开(公告)号:US20120281800A1
公开(公告)日:2012-11-08
申请号:US13460984
申请日:2012-05-01
IPC分类号: G21C17/00
摘要: A jet pump beam (hereinafter, referred to as a beam) is fitted into a pair of projecting portions installed to a transition piece, and after the beam is arched, a beam bolt engaged with the beam is tightened. An end of the beam bolt comes in contact with a top surface of an insert member fitted into an elbow disposed between the pair of projecting portions. An ultrasonic sensor head is fixed to the beam bolt, and ultrasonic waves are sent to the beam bolt from the ultrasonic sensor in the ultrasonic sensor head. An ultrasonic measuring apparatus obtains echo intensity of each of reflected waves generated at the end of the beam bolt and a bottom surface of the insert member, and based on the echo intensities, an echo intensity ratio R is calculated. The installed state of the beam is checked using the echo intensity ratio R.
摘要翻译: 将喷射泵梁(以下称为梁)装配到安装在过渡件上的一对突出部分中,并且在梁被拱形之后,与梁接合的梁螺栓被拧紧。 梁螺栓的端部与安装在设置在一对突出部之间的弯头中的插入件的顶面接触。 超声波传感器头固定在梁螺栓上,超声波从超声波传感器头中的超声波传感器发送到梁螺栓。 超声波测量装置获得在梁螺栓的端部和插入构件的底面处产生的每个反射波的回波强度,并且基于回波强度,计算回波强度比R. 使用回波强度比R检查光束的安装状态
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公开(公告)号:US20110197679A1
公开(公告)日:2011-08-18
申请号:US13028268
申请日:2011-02-16
申请人: Naoyuki KONO , Isao YOSHIDA , Masahiro KOIKE , Yoshio NONAKA , Hiroyuki NAKANO , Kenichi OTANI , Chihiro MATSUOKA , Masafumi IMAI
发明人: Naoyuki KONO , Isao YOSHIDA , Masahiro KOIKE , Yoshio NONAKA , Hiroyuki NAKANO , Kenichi OTANI , Chihiro MATSUOKA , Masafumi IMAI
IPC分类号: G01N29/00
CPC分类号: G01N29/28 , G01N29/265 , G01N2291/101 , G01N2291/2675
摘要: In an ultrasonic inspection method or ultrasonic inspection system in which an ultrasonic wave is propagated to an test object via a medium such as a liquid or a gas, an incident position of the ultrasonic wave is accurately and reliably identified. In an ultrasonic inspection method based on an immersion technique, an optical irradiator is mounted on an ultrasonic wave transmitting/receiving unit, an optical marker is irradiated from the optical irradiator to the test object, and an irradiated position of the optical marker is imaged using imaging equipment in order to perform inspection.
摘要翻译: 在超声波检查方法或超声波检查系统中,通过诸如液体或气体的介质将超声波传播到测试对象,可以精确可靠地识别超声波的入射位置。 在基于浸没技术的超声波检查方法中,将光学照相机安装在超声波发送/接收单元上,将光学标记从光学照射器照射到被检体,并且使用 成像设备进行检查。
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公开(公告)号:US20100133790A1
公开(公告)日:2010-06-03
申请号:US12626008
申请日:2009-11-25
申请人: Masahiro KOIKE , Kazuyuki YAMAMOTO
发明人: Masahiro KOIKE , Kazuyuki YAMAMOTO
CPC分类号: B60R21/235 , B29C65/48 , B29C65/52 , B29C66/1122 , B29C66/3242 , B29C66/432 , B29C66/4322 , B29C66/729 , B29K2313/00 , B29L2022/027 , B60R2021/2358 , Y10T156/10
摘要: An airbag is formed of two base fabrics. An adhesive agent is pasted with some width on one of the base fabrics and then another of the base fabrics is put on the one of the base fabrics. The two fabrics are adhered together to form the airbag. Pasting start/end portions of the adhesive agent is set at a gas introducing portion of the airbag. Pasting start/end points (terminal ends of the start/end portions) is located outside a path in the gas introducing portion through which a gas is introduced into an inside of the airbag. According to an airbag with the airbag, assembling workability of the airbag can be improved.
摘要翻译: 安全气囊由两个基布组成。 粘合剂在一个基底织物上粘贴一定宽度,然后将另一个基底织物放在一个基底织物上。 两个织物粘合在一起以形成气囊。 将粘合剂的粘贴开始/末端部分设置在气囊的气体引入部分。 粘贴开始/结束点(起始/结束部分的末端)位于气体引入部分中的气体的外部,气体导入部分通过该路径将气体引入到气囊的内部。 根据具有气囊的气囊,能够提高气囊的组装加工性。
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公开(公告)号:US20100052035A1
公开(公告)日:2010-03-04
申请号:US12403493
申请日:2009-03-13
申请人: Masahiro KOIKE , Yuichiro Mitani , Tatsuo Shimizu , Naoki Yasuda , Yasushi Nakasaki , Akira Nishiyama
发明人: Masahiro KOIKE , Yuichiro Mitani , Tatsuo Shimizu , Naoki Yasuda , Yasushi Nakasaki , Akira Nishiyama
IPC分类号: H01L29/788 , H01L29/792
CPC分类号: H01L29/7881 , H01L21/28273 , H01L21/28282 , H01L27/11521 , H01L29/513
摘要: A nonvolatile semiconductor memory apparatus includes: a source and drain regions formed at a distance from each other in a semiconductor layer; a first insulating film formed on the semiconductor layer located between the source region and the drain region, the first insulating film including a first insulating layer and a second insulating layer formed on the first insulating layer and having a higher dielectric constant than the first insulating layer, the second insulating layer having a first site performing hole trapping and releasing, the first site being formed by adding an element different from a base material to the second insulating film, the first site being located at a lower level than a Fermi level of a material forming the semiconductor layer; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.
摘要翻译: 一种非易失性半导体存储器件,包括:在半导体层中形成为彼此间隔一定距离的源区和漏区; 形成在位于源极区域和漏极区域之间的半导体层上的第一绝缘膜,所述第一绝缘膜包括形成在所述第一绝缘层上并具有比所述第一绝缘层高的介电常数的第一绝缘层和第二绝缘层 所述第二绝缘层具有进行孔捕获和释放的第一部位,所述第一部位通过将不同于基材的元素添加到所述第二绝缘膜而形成,所述第一部位位于比所述第二绝缘膜的费米能级更低的水平 形成半导体层的材料; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。
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