Semiconductor integrated circuit device
    1.
    发明申请
    Semiconductor integrated circuit device 失效
    半导体集成电路器件

    公开(公告)号:US20060091936A1

    公开(公告)日:2006-05-04

    申请号:US11261753

    申请日:2005-10-31

    IPC分类号: H03K3/01

    摘要: A substrate bias is controlled such that a leakage current is minimum. A semiconductor integrated circuit device comprises a leakage detecting circuit which detects a leakage current by using leakage detecting MOSFETs, a control circuit which generates a control signal depending on an output from the leakage detecting circuit, a substrate bias generating circuit which changes a substrate bias depending on the control signal, and a controlled circuit including a MOSFET having the same characteristics as that of each of the leakage detecting MOSFETs. The leakage detecting circuit detects a substrate leakage current which includes as the substrate bias becomes deep and a subthreshold leakage current which decreases as the substrate bias becomes deep. A control signal is transmitted to the substrate bias generating circuit such that the substrate bias is made deep when the substrate leakage current is smaller than the subthreshold leakage current and such that the substrate bias is made shallow when the substrate leakage current is larger than the subthreshold leakage current.

    摘要翻译: 控制衬底偏置使得漏电流最小。 一种半导体集成电路装置,包括利用泄漏检测用MOSFET检测泄漏电流的漏电检测电路,根据来自漏电检测电路的输出产生控制信号的控制电路,将衬底偏置变化的衬底偏置产生电路 控制信号的控制电路以及具有与各漏电检测用MOSFET相同特性的MOSFET的受控电路。 泄漏检测电路检测衬底偏置变深时包括的衬底漏电流,以及随着衬底偏压变深而减小的亚阈值漏电流。 控制信号被传送到衬底偏置产生电路,使得当衬底漏电流小于亚阈值漏电流时衬底偏压变深,并且当衬底泄漏电流大于次阈值时衬底偏置变浅 漏电流。

    Semiconductor integrated circuit device
    2.
    发明授权
    Semiconductor integrated circuit device 失效
    半导体集成电路器件

    公开(公告)号:US08008659B2

    公开(公告)日:2011-08-30

    申请号:US11261753

    申请日:2005-10-31

    IPC分类号: H01L23/58 H01L29/10 H03K3/01

    摘要: A substrate bias is controlled such that a leakage current is minimum. A semiconductor integrated circuit device comprises a leakage detecting circuit which detects a leakage current by using leakage detecting MOSFETs, a control circuit which generates a control signal depending on an output from the leakage detecting circuit, a substrate bias generating circuit which changes a substrate bias depending on the control signal, and a controlled circuit including a MOSFET having the same characteristics as that of each of the leakage detecting MOSFETs. The leakage detecting circuit detects a substrate leakage current which includes as the substrate bias becomes deep and a subthreshold leakage current which decreases as the substrate bias becomes deep. A control signal is transmitted to the substrate bias generating circuit such that the substrate bias is made deep when the substrate leakage current is smaller than the subthreshold leakage current and such that the substrate bias is made shallow when the substrate leakage current is larger than the subthreshold leakage current.

    摘要翻译: 控制衬底偏置使得漏电流最小。 一种半导体集成电路装置,包括利用泄漏检测用MOSFET检测泄漏电流的漏电检测电路,根据来自漏电检测电路的输出产生控制信号的控制电路,将衬底偏置变化的衬底偏置产生电路 控制信号的控制电路以及具有与各漏电检测用MOSFET相同特性的MOSFET的受控电路。 泄漏检测电路检测衬底偏置变深时包括的衬底漏电流,以及随着衬底偏压变深而减小的亚阈值漏电流。 控制信号被传送到衬底偏置产生电路,使得当衬底漏电流小于亚阈值漏电流时衬底偏压变深,并且当衬底泄漏电流大于次阈值时衬底偏置变浅 漏电流。

    DYNAMIC SEMICONDUCTOR DEVICE
    3.
    发明申请
    DYNAMIC SEMICONDUCTOR DEVICE 审中-公开
    动态半导体器件

    公开(公告)号:US20090201063A1

    公开(公告)日:2009-08-13

    申请号:US12160071

    申请日:2006-12-28

    IPC分类号: H03K3/289

    CPC分类号: H03K3/35625 H03K19/096

    摘要: A dynamic semiconductor device is provided with a plurality of master step sections having hatch sections for temporarily storing input data and dynamic gate sections; a plurality of slave step sections, which are alternately connected with master step sections and provided with dynamic gate sections or with latch sections and dynamic gate sections; and a timing signal generating section for generating a signal for controlling operation of the master step sections and the slave step sections. The timing signal generating section supplies the latch sections with signals for storing data of the previous step before the data is erased.

    摘要翻译: 动态半导体器件具有多个具有用于临时存储输入数据和动态门部分的开关部分的主步进部分; 多个从步骤部分,与主阶段部分交替地连接并设置有动态门部分或者具有锁存部分和动态门部分; 以及定时信号产生部分,用于产生用于控制主步进部分和从步进部分的操作的信号。 定时信号生成部分在锁存部分提供用于存储数据被擦除之前的前一步骤的数据的信号。

    SEMICONDUCTOR INTEGRATED CIRCUIT AND VOLTAGE CONTROLLER THEREWITH
    4.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT AND VOLTAGE CONTROLLER THEREWITH 审中-公开
    半导体集成电路和电压控制器

    公开(公告)号:US20110187419A1

    公开(公告)日:2011-08-04

    申请号:US13017268

    申请日:2011-01-31

    IPC分类号: H03B19/00 G05F1/10

    CPC分类号: G05F1/10 H03B19/00

    摘要: A semiconductor integrated circuit is capable of accurately detecting the characteristics of a chip. The semiconductor integrated circuit includes a monitor circuit and a control circuit. The control circuit generates a clock pulse signal having M successive pulses (M is 2 or a greater integer), and outputs the clock pulse signal to the monitor circuit. The monitor circuit includes a frequency divider and a ring oscillator. The frequency divider frequency divides the clock pulse signal by M and generates the resulting signal as an enable signal. The ring oscillator generates an oscillation signal as a monitor output value during a period defined in accordance with the enable signal.

    摘要翻译: 半导体集成电路能够准确地检测芯片的特性。 半导体集成电路包括监视电路和控制电路。 控制电路产生具有M个连续脉冲(M为2或更大整数)的时钟脉冲信号,并将该时钟脉冲信号输出到监视电路。 监视电路包括分频器和环形振荡器。 分频器频率将时钟脉冲信号除以M,并产生结果信号作为使能信号。 环形振荡器在根据使能信号定义的周期期间产生作为监视器输出值的振荡信号。

    Semiconductor integrated circuit device and power supply voltage control system
    5.
    发明授权
    Semiconductor integrated circuit device and power supply voltage control system 失效
    半导体集成电路器件和电源电压控制系统

    公开(公告)号:US08004351B2

    公开(公告)日:2011-08-23

    申请号:US12521605

    申请日:2007-12-28

    IPC分类号: G05F1/10

    CPC分类号: H03K19/0016

    摘要: A semiconductor integrated circuit device includes: a target circuit whose at least power supply voltage is variable; a power supply voltage providing circuit feeding the target circuit with a power supply voltage; and a minimum energy point monitor circuit detecting an energy-minimizing power supply voltage which minimizes a change in the energy consumed by the target circuit upon a change in the power supply voltage. The power supply voltage delivered by the power supply voltage providing circuit is controlled so as to be equal to the energy-minimizing power supply voltage detected by the minimum energy point monitor circuit.

    摘要翻译: 一种半导体集成电路器件,包括:目标电路,其至少电源电压是可变的; 电源电压提供电路,向目标电路馈送电源电压; 以及最小能量点监视电路,其检测能量最小化电源电压,其使得在电源电压变化时使目标电路消耗的能量的变化最小化。 由电源电压提供电路输送的电源电压被控制为等于由最小能量点监控电路检测到的能量最小化电源电压。

    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND POWER SUPPLY VOLTAGE CONTROL SYSTEM
    6.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND POWER SUPPLY VOLTAGE CONTROL SYSTEM 失效
    半导体集成电路设备和电源电压控制系统

    公开(公告)号:US20100327961A1

    公开(公告)日:2010-12-30

    申请号:US12521605

    申请日:2007-12-28

    IPC分类号: G05F1/10

    CPC分类号: H03K19/0016

    摘要: A semiconductor integrated circuit device includes: a target circuit whose at least power supply voltage is variable; a power supply voltage providing circuit feeding the target circuit with a power supply voltage; and a minimum energy point monitor circuit detecting an energy-minimizing power supply voltage which minimizes a change in the energy consumed by the target circuit upon a change in the power supply voltage. The power supply voltage delivered by the power supply voltage providing circuit is controlled so as to be equal to the energy-minimizing power supply voltage detected by the minimum energy point monitor circuit.

    摘要翻译: 一种半导体集成电路器件,包括:目标电路,其至少电源电压是可变的; 电源电压提供电路,向目标电路馈送电源电压; 以及最小能量点监视电路,其检测能量最小化电源电压,其使得在电源电压变化时使目标电路消耗的能量的变化最小化。 由电源电压提供电路输送的电源电压被控制为等于由最小能量点监控电路检测到的能量最小化电源电压。

    Power supply voltage control circuit
    7.
    发明申请
    Power supply voltage control circuit 审中-公开
    电源电压控制电路

    公开(公告)号:US20100295530A1

    公开(公告)日:2010-11-25

    申请号:US12662710

    申请日:2010-04-29

    IPC分类号: H02J4/00

    CPC分类号: H02M3/157

    摘要: A power supply voltage control circuit controls power supply voltage supplied to a target circuit that performs certain signal processing. The power supply voltage control circuit includes a control signal generation circuit that selectively generates first and second control signals when the power supply voltage supplied to the target circuit is increased from a first power supply voltage to a second power supply voltage, the second power supply voltage being higher than the first power supply voltage, and a power supply circuit that increases the power supply voltage toward a voltage level of the second power supply voltage based on the first control signal, or increases the power supply voltage to a voltage level higher than the second power supply voltage first and subsequently decreases the power supply voltage to the second power supply voltage based on the second control signal.

    摘要翻译: 电源电压控制电路控制提供给执行特定信号处理的目标电路的电源电压。 电源电压控制电路包括控制信号产生电路,当提供给目标电路的电源电压从第一电源电压增加到第二电源电压时,选择性地产生第一和第二控制信号,第二电源电压 高于第一电源电压的电源电压,以及基于第一控制信号将电源电压提高到第二电源电压的电压电平的电源电路,或者将电源电压提高到高于 并且随后基于第二控制信号将电源电压降低到第二电源电压。

    Semiconductor integrated circuit device
    8.
    发明授权
    Semiconductor integrated circuit device 失效
    半导体集成电路器件

    公开(公告)号:US08390313B2

    公开(公告)日:2013-03-05

    申请号:US13052400

    申请日:2011-03-21

    IPC分类号: H03K19/00 G01R25/00

    CPC分类号: H03K19/00392

    摘要: When an operation of a specified one of monitor circuits is defective or any of elements forming a ring oscillator in each of the monitor circuits has characteristic abnormality, if voltage control is performed based on a result from the monitor operating at a lowest speed, a required voltage may be overestimated. This results in an increase in power consumption, and also causes an accuracy reduction when the average value of detection results from the multiple monitors is calculated. The multiple monitor circuits are provided. Of the detection results therefrom, any detection result falling outside a predetermined range is ignored, and the average value of the remaining monitor results is used as a final monitor detection value.

    摘要翻译: 当监视电路中指定的一个监视器电路的操作有故障或每个监视器电路中形成环形振荡器的元件中的任何元件具有特征异常时,如果基于监视器以最低速度操作的结果进行电压控制, 电压可能被高估了。 这导致功耗的增加,并且当计算来自多个监视器的检测结果的平均值时,也导致精度降低。 提供多个监视器电路。 在其检测结果中,忽略超出预定范围的任何检测结果,并且将剩余监视结果的平均值用作最终监视检测值。

    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    9.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
    半导体集成电路设备

    公开(公告)号:US20110241725A1

    公开(公告)日:2011-10-06

    申请号:US13052400

    申请日:2011-03-21

    IPC分类号: H03K19/00 G01R25/00

    CPC分类号: H03K19/00392

    摘要: When an operation of a specified one of monitor circuits is defective or any of elements forming a ring oscillator in each of the monitor circuits has characteristic abnormality, if voltage control is performed based on a result from the monitor operating at a lowest speed, a required voltage may be overestimated. This results in an increase in power consumption, and also causes an accuracy reduction when the average value of detection results from the multiple monitors is calculated. The multiple monitor circuits are provided. Of the detection results therefrom, any detection result falling outside a predetermined range is ignored, and the average value of the remaining monitor results is used as a final monitor detection value.

    摘要翻译: 当监视电路中指定的一个监视器电路的操作有故障或每个监视器电路中形成环形振荡器的元件中的任何元件具有特征异常时,如果基于监视器以最低速度操作的结果执行电压控制,则所需的 电压可能被高估了。 这导致功耗的增加,并且当计算来自多个监视器的检测结果的平均值时,也导致精度降低。 提供多个监视器电路。 在其检测结果中,忽略超出预定范围的任何检测结果,并且将剩余监视结果的平均值用作最终监视检测值。

    Semiconductor circuit device controlling power source voltage
    10.
    发明授权
    Semiconductor circuit device controlling power source voltage 失效
    半导体电路器件控制电源电压

    公开(公告)号:US08004348B2

    公开(公告)日:2011-08-23

    申请号:US12526988

    申请日:2008-02-14

    IPC分类号: G05F1/10

    CPC分类号: H03K19/00384

    摘要: A control circuit controls a power-source-voltage feed circuit, and controls a power source voltage fed to a target circuit. A reference-speed monitor monitors whether or not a delay time of a critical path in the target circuit is satisfies a required operational speed. A voltage-difference monitor monitors a difference between the power source voltage of the target circuit and a threshold voltage of the target circuit, to output the voltage difference information. The control circuit determines whether to increase or decrease the power source voltage based on a result of monitoring by the reference-speed monitor. The control circuit determines the change rate of the power source voltage so that the control rate of the power source voltage is proportional to the voltage difference information output from the voltage-difference monitor.

    摘要翻译: 控制电路控制电源电压馈电电路,并控制馈送到目标电路的电源电压。 参考速度监视器监视目标电路中的关键路径的延迟时间是否满足所需的操作速度。 电压差监视器监视目标电路的电源电压与目标电路的阈值电压之间的差异,以输出电压差信息。 控制电路根据基准速度监视器的监视结果来决定是否增加或减小电源电压。 控制电路确定电源电压的变化率,使得电源电压的控制速率与从电压差监视器输出的电压差信息成比例。