摘要:
A parity-data generating unit generates, in response to a write request containing update data, updated parity data in the parity group to which the update data belongs. A time-series-information generating unit generates time-series information indicating an anteroposterior relationship during writing between the update data and existing data stored in the unit storage area to which the update data is to be written. A time-series-information adding unit adds the time-series information, generated in response to the write request, to the update data as certification time-series information and that adds comparison time-series information to the updated parity data in association with the update data, the comparison time-series information having the same value as the certification time-series information. A writing unit distributes and writes, to the multiple storage devices, the update data to which the certification time-series information is added and the updated parity data to which the comparison time-series information is added.
摘要:
A non-transitory computer-readable recording medium stores therein a charge calculating program that causes a computer that manages a database of different data items to execute recording for each data item, information indicating the number of clients that receive the data item; extracting from the information recorded at the recording and for each data item to be received by a given client, information indicating the number of clients receiving the data item; calculating charges for the given client, based on the extracted information; and outputting the calculated charges.
摘要:
A storage-management apparatus and method that manages storage areas. The storage-management apparatus includes a collecting unit that collects valid-area-determination information items, each of which shows whether a corresponding one of the storage areas is a valid or invalid area, and timestamp information items, each of which shows that a corresponding one of the storage areas has been accessed. In accordance with the valid-area-determination information items and the timestamp information items, data from a storage area which is selected from among valid areas and whose timestamp information item is oldest is copied to a storage area which is selected from among invalid areas and whose timestamp information item is oldest, and timestamp information items and valid-area-determination information items concerning the storage area from which the data is copied and concerning the storage area to which the data is copied is updated.
摘要:
A computer-readable recording medium stores a program that causes a computer to execute a writing control process that includes receiving a writing request to write a first data to a first storage apparatus; determining a second data from among a series of data and based on a writing sequence of the series of data written to the computer and a count of storage areas at a second storage apparatus that sequentially selects from among the storage areas when data is received, a storage area to be over written by the received data, where the second data is written to the first storage apparatus and is identical to data that is stored in the storage area to be selected next at the second storage apparatus; and transmitting copy data of the first data to the second storage apparatus, when the second data has been written to the first storage apparatus.
摘要:
An information processing apparatus includes a first storage unit and a processor. The first storage unit includes a first storage area. The processor receives a first request to write first data into the first storage area. The processor requests an external apparatus to write the first data into a second storage area in a second storage unit included in the external apparatus. The processor determines whether a first response has been received from the external apparatus. The first response indicates that the first data has been written into the second storage area. The processor writes the first data into the first storage area when the first response has been received. The processor requests, without writing the first data into the first storage area, the external apparatus to write second data stored in the first storage area into the second storage area when the first response has not been received.
摘要:
An information processing device is provided that provides service by executing a service provider program in a cluster system. The device includes a program information transmission unit that transmits to a monitoring node that monitors the cluster system, a node list information reception unit that receives node list information, an update target selection unit that determines which of the other information processing devices which are not yet updated with the service provider program by referring to the program information in the node list information, a command timing determination unit that determines a time after a lapse of the standby time found in the first update timing information as a command timing of the update command, an update timing information generation unit that generates second update timing information and an update command transmission unit that transmits the update command about the service provider program and the second update timing information.
摘要:
A data management device includes a memory including a multistage Bloom Filter, a first stage being divided into filter parts of which the number is same as that of data blocks, and a pth stage being divided into filter parts of which a size is a combination of filter parts of a (p−1)th stage; a registration unit registering an entry of data in a filter part of the first stage corresponding to a data block where the data is stored, and the entry of the data to a filter part of the pth stage corresponding to the filter part of the first stage where the entry of the data is registered; and a search unit determining which filter part of the first stage an entry of data being searched is registered in by narrowing down filter parts from the Bloom Filter of which a stage number is large.
摘要:
A microwave oscillation element of the present invention includes a lamination main part in which an oscillating layer that is a magnetization free layer and that generates a high frequency electromagnetic field by an excitation of a spin wave, a nonmagnetic intermediate layer, a polarizer layer, and a reference layer that is to be a base magnetic layer of a spin transfer due to application of current are layered in this order. The oscillating layer is made of CoIr, the polarizer layer is configured of CoCr or CoRu; and the nonmagnetic intermediate layer is configured of Cr or Ru. As a result, the efficiency of the spin injection is improved and the microwave oscillation element where the oscillation efficiency is excellent can be realized.
摘要:
A magnetoresistance effect element (MR element) for use in a thin-film magnetic head has a buffer layer, an antiferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer that are successively stacked. A sense current flows in a direction perpendicular to layer surfaces via a lower shield layer and an upper shield layer. The pinned layer comprises an outer layer having a fixed magnetization direction, a nonmagnetic intermediate layer, and an inner layer in the form of a ferromagnetic layer. The spacer layer comprises a first nonmagnetic metal layer, a semiconductor layer made of ZnO, and a second nonmagnetic metal layer. The inner layer or the outer layer includes a diffusion blocking layer made of an oxide of an element whose electronegativity is equal to or smaller than Zn, e.g., ZnO, TaO, ZrO, MgO, TiO, or HfO, or made of RuO.
摘要:
A magneto-resistance effect element (MR element) used for a thin film magnetic head is configured by a buffer layer, an anti-ferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer, which are laminated in this order, and a sense current flows through the element in a direction orthogonal to the layer surface, via a lower shield layer and a upper shield layer. The pinned layer comprises an outer layer in which a magnetization direction is fixed, a non-magnetic intermediate layer, and an inner layer which is a ferromagnetic layer. The spacer layer comprises a first non-magnetic metal layer, a semiconductor layer, and a second non-magnetic metal layer. The first non-magnetic metal layer and the second non-magnetic metal layer comprise CuPt films having a thickness ranging from a minimum of 0.2 nm to a maximum of 2.0 nm, and the Pt content ranges from a minimum of 5 at % to a maximum of 25 at %. The semiconductor layer comprises a ZnO film, ZnS film, or GaN film having a thickness ranging from a minimum of 1.0 nm to a maximum of 2.5 nm.