公开(公告)号：US20110048344A1

公开(公告)日：2011-03-03

申请号：US12853554

申请日：2010-08-10

申请人： Masakazu KOBAYASHI

发明人： Masakazu KOBAYASHI

IPC分类号： F22B1/18

CPC分类号： F24D19/1051 ,  F24D17/0052 ,  F24D19/0095 ,  F24D19/088 ,  F24D2200/043 ,  F24D2200/18 ,  F24H1/0081 ,  Y02B10/70 ,  Y02B30/18

摘要： A water heating apparatus includes: an exhaust gas passage through which an exhaust gas from a burner flows; a water flow passage through which water flows; a first heat exchanger configured to exchange heat between sensible heat contained in the exhaust gas and water flowing through a heat exchanger tube, and arranged at upstream side of the exhaust gas passage and downstream side of the water flow passage; a second heat exchanger configured to exchange heat between latent heat contained in the exhaust gas and water flowing through a heat exchanger tube, and arranged at downstream side of the exhaust gas passage and upstream side of the water flow passage; and a bypass pipe arranged in the water flow passage in such a position as to bypass the second heat exchanger and designed to allow a at least the predetermined minimum amount of water required for a burner combustion operation to flow therethrough into the first heat exchanger.

摘要翻译： 水加热装置包括：来自燃烧器的废气流过的废气通道; 水流通过的水流通道; 第一热交换器，被配置为在废气中包含的显热与流过热交换器管的水之间进行热交换，并且布置在排气通道的上游侧和水流通道的下游侧; 第二热交换器，被配置为在废气中包含的潜热与流过热交换器管的水之间进行热交换，并且布置在排气通道的下游侧和水流通道的上游侧; 以及旁通管，其布置在所述水流通道中，以便绕过所述第二热交换器并被设计成允许燃烧器燃烧操作所需的至少预定的最小量的水流过其进入所述第一热交换器。

公开(公告)号：US20110012171A1

公开(公告)日：2011-01-20

申请号：US12831991

申请日：2010-07-07

申请人： Masakazu KOBAYASHI

发明人： Masakazu KOBAYASHI

IPC分类号： H01L29/739

CPC分类号： H01L29/7397 ,  H01L29/0834 ,  H01L29/66348 ,  H01L29/74

摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, and a first main electrode. The second semiconductor layer is provided on the first semiconductor layer. The third semiconductor layer is provided on the first semiconductor layer in contact with the second semiconductor layer and has an impurity concentration higher than an impurity concentration of the first semiconductor layer. The first main electrode includes a first metal layer and a second metal layer made of a metal different from a metal of the first metal layer. The first metal layer is connected to the second semiconductor layer. The second metal layer is connected to the third semiconductor layer.

摘要翻译： 根据一个实施例，半导体器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，第一导电类型的第三半导体层和第一主电极。 第二半导体层设置在第一半导体层上。 第三半导体层设置在与第二半导体层接触的第一半导体层上，并且具有高于第一半导体层的杂质浓度的杂质浓度。 第一主电极包括第一金属层和由与第一金属层的金属不同的金属制成的第二金属层。 第一金属层连接到第二半导体层。 第二金属层连接到第三半导体层。

公开(公告)号：US20120241899A1

公开(公告)日：2012-09-27

申请号：US13423131

申请日：2012-03-16

申请人： Masakazu KOBAYASHI

发明人： Masakazu KOBAYASHI

IPC分类号： H01L29/06

CPC分类号： H01L29/0615 ,  H01L29/7395

摘要： A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of the second conductivity type. The second semiconductor layer is provided on the first semiconductor layer and has a lower concentration of first conductivity type impurity than the first semiconductor layer. The third semiconductor layer is provided on a surface of the second semiconductor layer. The fourth semiconductor layer is selectively provided on a surface of the third semiconductor layer and has a higher concentration of second conductivity type impurity than the third semiconductor layer. The third semiconductor layer includes a carrier lifetime reducing region adjacent to a bottom surface of the fourth semiconductor layer. The carrier lifetime reducing region is spaced from the second semiconductor layer.

摘要翻译： 功率半导体器件包括第一导电类型的第一半导体层，第一导电类型的第二半导体层，第二导电类型的第三半导体层和第二导电类型的第四半导体层。 第二半导体层设置在第一半导体层上，并且具有比第一半导体层低的第一导电型杂质浓度。 第三半导体层设置在第二半导体层的表面上。 第四半导体层选择性地设置在第三半导体层的表面上，并且具有比第三半导体层更高的第二导电型杂质浓度。 第三半导体层包括与第四半导体层的底表面相邻的载流子寿命降低区域。 载流子寿命降低区域与第二半导体层间隔开。

公开(公告)号：US20110006779A1

公开(公告)日：2011-01-13

申请号：US12831302

申请日：2010-07-07

申请人： Masakazu KOBAYASHI ,  Konghui Yu

发明人： Masakazu KOBAYASHI ,  Konghui Yu

IPC分类号： G01R31/02

CPC分类号： G01R15/185 ,  G01R31/025 ,  G01R33/04

摘要： A flux-gate leakage current sensor includes: an annular core; a coil wound around the core; a driving circuit which applies to the coil a voltage with a positive/negative symmetric rectangular wave so as to saturate a density of a magnetic flux of the coil while reversing a direction of the magnetic flux; a comparator circuit which compares a measured voltage changing according to a coil current flowing in the coil with a positive-side reference voltage and a negative-side reference voltage that are positive/negative symmetric to each other, and outputs a positive-side electric signal corresponding to a period in which the measured voltage is higher than the positive-side reference voltage and a negative-side electric signal corresponding to a period in which the measured voltage is lower than the negative-side reference voltage; and a determination circuit which compares the positive-side electric signal and the negative-side electric signal output from the comparator circuit.

摘要翻译： 磁通门漏电流传感器包括：环形磁芯; 缠绕在芯上的线圈; 驱动电路，其对线圈施加正/负对称矩形波的电压，以使线圈的方向反转来饱和线圈的磁通密度; 比较电路，其将根据线圈中流过的线圈电流的测量电压与正/负对称的正侧基准电压和负侧基准电压进行比较，并输出正侧电信号 对应于测量电压高于正侧参考电压的时段和对应于测量电压低于负侧参考电压的周期的负侧电信号; 以及比较从比较电路输出的正侧电信号和负侧电信号的判定电路。

公开(公告)号：US20080217078A1

公开(公告)日：2008-09-11

申请号：US12043388

申请日：2008-03-06

申请人： Masakazu KOBAYASHI ,  Yoshio Shimoida

发明人： Masakazu KOBAYASHI ,  Yoshio Shimoida

IPC分类号： B60K1/04 ,  H01M10/02 ,  H01M2/02

CPC分类号： H01M10/0585 ,  H01M2/024 ,  H01M2/0262 ,  H01M2/0265 ,  H01M2/0277 ,  H01M10/0525 ,  H01M2002/0297 ,  Y02E60/122 ,  Y02T10/7011

摘要： A lithium-ion secondary battery which includes a battery element and an exterior package covering the battery element. The battery element includes a separator, and an electrode-stacked body having a first electrode and a second electrode disposed respectively on both surfaces of the separator in a stacking direction. The exterior package includes a first package member located at one side of the battery element in the stacking direction, and a second package member located at the other side of the battery element in the stacking direction. A linear expansion coefficient α1 of the first package member is greater than a linear expansion coefficient α2 of the second package member.

摘要翻译： 一种锂离子二次电池，其包括电池元件和覆盖电池元件的外部封装。 电池元件包括隔板和电极堆叠体，其具有分别在层叠方向上分隔在隔膜的两个表面上的第一电极和第二电极。 外包装包括位于电池元件沿层叠方向的一侧的第一包装件和位于电池元件的堆叠方向另一侧的第二包装件。 第一包装件的线性膨胀系数α1大于第二包装件的线性膨胀系数α2。