Heat transport device and electronic device
    5.
    发明授权
    Heat transport device and electronic device 失效
    热输送装置和电子装置

    公开(公告)号:US07000686B2

    公开(公告)日:2006-02-21

    申请号:US11043132

    申请日:2005-01-27

    IPC分类号: F28D15/02

    摘要: A heat transport device includes an evaporator, a condenser, and a vapor channel and a plurality of liquid channels that connect the evaporator and the condenser. The evaporator generates a capillary force to circulate working fluid. This structure prevents the performance deterioration and malfunction due to the entry of vapor-phase working fluid into the liquid channels. Since the cross-sectional areas of the liquid channels gradually decrease from the condenser toward the evaporator, the capillary force at the liquid channels can be increased, and vapor-phase working fluid is prevented from entering the liquid channels. Wicks and the portions of the liquid channels adjacent thereto are filled with liquid-phase working fluid even after dryout occurs, stable operation is achieved.

    摘要翻译: 热传输装置包括蒸发器,冷凝器和蒸汽通道以及连接蒸发器和冷凝器的多个液体通道。 蒸发器产生毛细管力以循环工作流体。 这种结构防止由于气相工作流体进入液体通道而引起的性能劣化和故障。 由于液体通道的横截面积从冷凝器朝向蒸发器逐渐减小,所以可以增加液体通道处的毛细管力,并且防止气相工作流体进入液体通道。 即使在干燥发生之后,芯子和与其相邻的液体通道的部分填充有液相工作流体,因此实现了稳定的操作。

    Process of manufacturing semiconductor device
    6.
    发明授权
    Process of manufacturing semiconductor device 有权
    制造半导体器件的工艺

    公开(公告)号:US06458715B2

    公开(公告)日:2002-10-01

    申请号:US09779766

    申请日:2001-02-08

    IPC分类号: H01L21265

    摘要: A target semiconductor device can be obtained stably by reforming an insulating film and a semiconductor. In a process of manufacturing a semiconductor device, at least one of the semiconductor and the insulating film is reformed after an annealing process for annealing the semiconductor at a temperature ranging from 20 to 400° C. in the atmosphere containing a gas of water (H2O) with a partial pressure from 1 Torr to a saturated vapor pressure for an annealing time ranging from 15 seconds to 20 hours.

    摘要翻译: 可以通过重整绝缘膜和半导体来稳定地获得目标半导体器件。 在制造半导体器件的过程中,在包含水气体(H 2 O)的气氛中,在20〜400℃的温度范围内退火半导体的退火处理后,半导体和绝缘膜中的至少一个被重整 ),分压为1乇至饱和蒸汽压,退火时间为15秒至20小时。

    Network system for ensemble performance by remote terminals
    7.
    发明授权
    Network system for ensemble performance by remote terminals 失效
    远程终端综合性能的网络系统

    公开(公告)号:US06438611B1

    公开(公告)日:2002-08-20

    申请号:US09239424

    申请日:1999-01-28

    IPC分类号: G06F1516

    摘要: In a network performance system involving a plurality of performance apparatuses, each performance apparatus stores phrase performance information of a plurality of performance parts, and each performance apparatus is allocated with one of the performance parts to conduct an ensemble performance composed of the plurality of the performance parts. A server apparatus is connected to each of the performance apparatuses via a network. Each of the performance apparatuses is manually operable to input operational information relating to the performance part allocated thereto, and transmits the inputted operational information to the server apparatus via the network. The server apparatus delivers the operational information transmitted by each of the performance apparatuses to other of the performance apparatuses via the network. Each of the performance apparatuses receives the operational information relating to other performance parts allocated to other of the performance apparatuses from the server apparatus via the network, and reproduces the phrase performance information of the performance part allocated thereto in response to the inputted operational information and concurrently reproduces the phrase information of other performance parts allocated to other of the performance apparatuses in response to the received operational information to thereby conduct the ensemble performance composed of the plurality of the performance parts.

    摘要翻译: 在涉及多个性能装置的网络性能系统中,每个演奏装置存储多个演奏部分的短片演奏信息,并且每个演奏装置分配有一个演奏部分,以进行由多个演奏组成的组合演奏 部分。 服务器装置经由网络连接到每个演奏装置。 每个演奏装置可手动操作以输入与分配给其的演奏部分有关的操作信息,并且经由网络将输入的操作信息发送到服务器装置。 服务器装置经由网络将由各个演奏装置发送的作业信息传送到其他演奏装置。 每个执行装置经由网络从服务器装置接收与分配给其他演奏装置的其他演奏部分有关的操作信息,并且响应于所输入的操作信息再现分配给其的演奏部分的短语演奏信息,同时 响应于所接收的操作信息再现分配给其他演奏装置的其他演奏部分的短语信息,从而进行由多个演奏部分组成的组合演奏。

    Method for making an insulating film
    8.
    发明授权
    Method for making an insulating film 失效
    制造绝缘膜的方法

    公开(公告)号:US06429147B2

    公开(公告)日:2002-08-06

    申请号:US09106007

    申请日:1998-06-29

    申请人: Masaki Hara

    发明人: Masaki Hara

    IPC分类号: H01L2131

    摘要: In a method for manufacturing an insulating film using a fluid source material without inviting corrosion of metal wiring or the problem of poisoned via, after making a SiO2 film as a base layer on an Si substrate defining an uneven surface with an Al alloy wiring by plasma CVD using SiH4 and N2O, and further making an inter-layer insualting film having a fluidity on the SiO2 film by low pressure CVD using SiH4 or organosilane and H2O2, O2 plasma processing is applied to the inter-layer insulating film. After that, a SiO2 film as a cap layer is made on the inter-layer insulating film by plasma CVD using SiH4 and N2O. Rapid thermal annealing using lamp heating or O3 annealing may be done in lieu of O2 plasma processing.

    摘要翻译: 在使用流体源材料制造绝缘膜而不引起金属布线的腐蚀或中毒的问题的方法中,在通过等离子体的Al合金布线形成不均匀表面的Si基板上制造SiO 2膜作为基底层之后 使用SiH 4和N 2 O进行CVD,并且通过使用SiH 4或有机硅烷和H 2 O 2的低压CVD进一步制备在SiO 2膜上具有流动性的层间绝缘膜,将O 2等离子体处理施加到层间绝缘膜。 之后,通过使用SiH 4和N 2 O的等离子体CVD在层间绝缘膜上形成作为覆盖层的SiO 2膜。 使用灯加热或O 3退火的快速热退火可以代替O 2等离子体处理。

    Method for manufacturing microfabrication apparatus
    9.
    发明授权
    Method for manufacturing microfabrication apparatus 失效
    微细加工装置的制造方法

    公开(公告)号:US06387713B2

    公开(公告)日:2002-05-14

    申请号:US09874165

    申请日:2001-06-04

    申请人: Masaki Hara

    发明人: Masaki Hara

    IPC分类号: H01L2100

    CPC分类号: B81C1/0019 B81C2201/034

    摘要: To offer a microstructure fabrication apparatus capable of realizing MEMS and a Rugate Filter excellent in performance characteristics by patterning a thick functional material film in high aspect ratio with a simple and practical manufacturing method. A Si layer is employed for a mask pattern. The advantages of the Si layer are withstood a process conducted at high temperature for forming a PZT layer, which is the functional material layer, patterned in high aspect ratio, and achieves excellent process consistency for the whole manufacturing processes of the microfabrication. A trench or a gap is formed with the mask pattern deeper than the desired PZT layer. The PZT layer, or functional material layer (films) is formed on the whole surface including the bottom of the concave part of the mask pattern. The PZT layer deposited on the mask pattern is removed with the mask pattern itself, and selectively remains the pattern of the PZT layer, thereby obtaining a pattern of the desired functional material layer.

    摘要翻译: 为了提供一种能够实现MEMS的微结构制造装置和通过以简单实用的制造方法对具有高纵横比的厚功能材料膜进行图案化的性能特性优异的Rugate滤波器。 Si层用于掩模图案。 Si层的优点是经受在高温下进行的工艺,以形成以高纵横比构图的功能材料层形成PZT层,并且在微细加工的整个制造工艺中获得优异的工艺一致性。 形成沟槽或间隙,掩模图案比期望的PZT层更深。 在包括掩模图案的凹部的底部的整个表面上形成PZT层或功能材料层(膜)。 沉积在掩模图案上的PZT层用掩模图案本身去除,并且选择性地保留PZT层的图案,从而获得所需功能材料层的图案。

    Techniques of using computer keyboard as musical instrument keyboard
    10.
    发明授权
    Techniques of using computer keyboard as musical instrument keyboard 有权
    使用电脑键盘作为乐器键盘的技术

    公开(公告)号:US6066795A

    公开(公告)日:2000-05-23

    申请号:US251064

    申请日:1999-02-18

    申请人: Masaki Hara

    发明人: Masaki Hara

    摘要: An apparatus for using a computer keyboard as a musical instrument keyboard, the apparatus having: a computer keyboard having a plurality of keys for generating key information upon operation of each key; a unit for switching between an enable state and a disabled state of a musical instrument keyboard function; and a MIDI data generating unit for generating MIDI data corresponding to the key information upon operation of each key of the computer keyboard if the musical instrument keyboard function is in the enabled state.

    摘要翻译: 一种用于使用计算机键盘作为乐器键盘的装置,所述装置具有:具有多个键的计算机键盘,用于在每个键操作时产生键信息; 用于在乐器键盘功能的使能状态和禁用状态之间切换的单元; 以及MIDI数据生成单元,用于如果乐器键盘功能处于启用状态,则在操作计算机键盘的每个键时产生与键信息对应的MIDI数据。