公开(公告)号：US20100197102A1

公开(公告)日：2010-08-05

申请号：US12694342

申请日：2010-01-27

申请人： Hirotaka Akao ,  Yuriko Kaino ,  Takahiro Kamei ,  Masaki Hara ,  Kenichi Kurihara

发明人： Hirotaka Akao ,  Yuriko Kaino ,  Takahiro Kamei ,  Masaki Hara ,  Kenichi Kurihara

IPC分类号： H01L21/336 ,  H01L21/31

CPC分类号： H01L21/28229 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/1295 ,  H01L21/02164 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/02628 ,  H01L21/02664 ,  H01L21/28211 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/6675

摘要： A film deposition method includes the steps of: coating a solution containing a polysilane compound on a substrate to form a coating film and then carrying out a first thermal treatment in an inert atmosphere, thereby forming the coating film into a silicon film; forming a coating film containing a polysilane compound on the silicon film and then carrying out a second thermal treatment in an inert atmosphere or a reducing atmosphere, thereby forming the coating film into a silicon oxide precursor film; and carrying out a third thermal treatment in an oxidizing atmosphere, thereby forming the silicon oxide precursor film into a silicon oxide film and simultaneously densifying the silicon film.

摘要翻译： 膜沉积方法包括以下步骤：在基板上涂布含有聚硅烷化合物的溶液，形成涂膜，然后在惰性气氛中进行第一热处理，从而将涂膜形成硅膜; 在硅膜上形成含有聚硅烷化合物的涂膜，然后在惰性气氛或还原气氛中进行第二次热处理，从而将涂膜形成氧化硅前体膜; 并在氧化气氛中进行第三次热处理，从而将氧化硅前体膜形成为氧化硅膜，同时使硅膜致密化。

公开(公告)号：US06663789B2

公开(公告)日：2003-12-16

申请号：US09910199

申请日：2001-07-20

申请人： Masaki Hara

发明人： Masaki Hara

IPC分类号： B29D1100

CPC分类号： B81C3/001 ,  H01L21/2007 ,  H01L21/50 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/16225 ,  H01L2224/81 ,  H01L2924/00014

摘要： In fabricating bonded substrate structures having a device-housing space therein, microstructures in the bonded substrates are prevented from being broken or damaged, and the yield of the bonded substrate structures fabricated is increased. A through-groove capable of connecting the device-housing space to the outside is formed in the bonded surface of one substrate. Thus configured, the atmosphere inside the device-housing space is kept the same as the outside atmosphere while openings that reach the device-housing space are formed through the bonded substrate structure by etching the structure, and the device-housing space is prevented from being subjected to any rapid pressure change in the process of forming the openings. The depth of the through-groove may be the same as that of the recess for the device-housing space. Thus configured, the through-groove may be formed in one and the same etching treatment for forming the device-housing space. The through-groove may be partly sealed with a Pb bump or the like, and the atmosphere inside the device-housing space can be insulated from the outside atmosphere in any stage of processing the bonded substrate structure.

公开(公告)号：US06552991B1

公开(公告)日：2003-04-22

申请号：US09692258

申请日：2000-10-19

申请人： Koji Ishioka ,  Hiroto Ido ,  Naoto Kojima ,  Kazuhito Hori ,  Masaki Hara

发明人： Koji Ishioka ,  Hiroto Ido ,  Naoto Kojima ,  Kazuhito Hori ,  Masaki Hara

IPC分类号： G11B700

CPC分类号： G11B7/1362 ,  G02B26/085 ,  G11B7/08576 ,  G11B7/122 ,  Y10S359/904

摘要： In a micro mirror apparatus pivoting on a hinge part as its axis, a movable part connected to a stationary part through the hinge part enhances exclusively the flexural rigidity of the hinge part without causing any significant change in the torsional rigidity of the hinge part and thus widens servo band. To this end, on at least a part of the hinge part 14, a protrusion 14b protruding in the direction of its thickness is formed. This greatly increases the flexural rigidity of the hinge part 14 and widens the servo band.

摘要翻译： 在铰链部件作为其轴线枢转的微镜装置中，通过铰链部分连接到固定部件的可移动部件仅提供铰链部件的弯曲刚度，而不会引起铰链部件的扭转刚度的任何显着变化，因此 拓宽伺服带。 为此，在铰链部14的至少一部分上，形成有沿其厚度方向突出的突出部14b。 这大大增加了铰链部分14的弯曲刚度并且加宽了伺服带。

公开(公告)号：US06455227B1

公开(公告)日：2002-09-24

申请号：US09473655

申请日：1999-12-29

申请人： Masaki Hara

发明人： Masaki Hara

IPC分类号： G03F726

CPC分类号： G03F7/2022 ,  B81C1/00126 ,  B81C2201/0108 ,  B81C2201/0152 ,  B81C2201/0197 ,  G03F7/095 ,  G03F7/11

摘要： A multilayer resist structure is irradiated more than one time with ultraviolet rays through a photomask. Each time the structure is irradiated, ultraviolet rays of a little greater quantity of light than those used in the last irradiation are used. Also, with each exposure, a photomask which has a larger lightproof section than that used in the last irradiation is used. Next, the multilayer resist structure is developed, and the exposed area of each photoresist is removed with a developing solution. Also, in amorphous silicon layers, the areas under the removed photoresist are easily removed with the developing solution. A resist structure having desired steps is thus completed. Using the resist structure, a three-dimensional microstructure can be formed.

摘要翻译： 通过光掩模用紫外线照射多层抗蚀剂结构多次。 每次照射结构时，使用比上次照射中使用的光量稍大的紫外线。 此外，对于每次曝光，使用具有比在最后照射中使用的遮光部分更大的遮光部分的光掩模。 接下来，显影多层抗蚀剂结构体，用显影液去除各光致抗蚀剂的露出面积。 此外，在非晶硅层中，去除的光致抗蚀剂下的区域容易用显影液除去。 因此完成了具有所需步骤的抗蚀剂结构。 使用抗蚀剂结构，可以形成三维微结构。

公开(公告)号：US06232245B1

公开(公告)日：2001-05-15

申请号：US09265232

申请日：1999-03-08

申请人： Masaki Hara

发明人： Masaki Hara

IPC分类号： H07L2144

CPC分类号： H01L21/31612 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/31051 ,  H01L21/76801 ,  H01L21/76819 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834

摘要： A method of forming an interlayer film on a substrate with a plurality of patterns formed thereon wherein the interlayer film is deposited on the substrate by a process comprising a plurality of steps in each of which a portion of the film is deposited so as to have different fluidity with the same source material.

摘要翻译： 一种在其上形成有多个图案的基板上形成中间膜的方法，其中通过包括多个步骤的方法将所述中间膜沉积在所述基板上，所述多个步骤中的所述层的一部分被沉积以具有不同的 流动性与相同的源材料。

公开(公告)号：US06221756B1

公开(公告)日：2001-04-24

申请号：US09262619

申请日：1999-03-04

申请人： Masaki Hara

发明人： Masaki Hara

IPC分类号： H01L214763

CPC分类号： H01L21/31612 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/31051 ,  H01L21/76801 ,  H01L21/76819 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834

摘要： A method of forming an interlayer film on a substrate with a plurality of patterns formed thereon wherein the interlayer film is deposited on the substrate by a process comprising a plurality of steps in each of which a portion of the film is deposited so as to have different fluidity with the same source material. In the first aspect of the method, a portion of the interlayer film is at first deposited so as to have relatively reduced fluidity, so that the film is formed with an almost uniform thickness regardless of any pattern width on the substrate. After this, the rest portion of the film is deposited so that it has relatively increased fluidity so as to fill up the trough between the patterns. In the second aspect of the method, an undercoating film is formed in advance which is then treated to be hydrophobic so that a portion of the interlayer film deposited thereon reduces its fluidity, by which the portion is uniformly deposited regardless of any pattern width. Then, the rest portion of the film is deposited over the above portion of the film with relatively increased fluidity.

摘要翻译： 一种在其上形成有多个图案的基板上形成中间膜的方法，其中通过包括多个步骤的方法将所述中间膜沉积在所述基板上，所述多个步骤中的所述层的一部分被沉积以具有不同的 在该方法的第一方面中，首先沉积一部分层间膜以具有相对降低的流动性，使得膜形成为几乎均匀的厚度，而不管任何图案宽度如何 底物。 之后，沉积薄膜的其余部分，使其具有相对增加的流动性，以填充图案之间的槽。在该方法的第二方面，预先形成底涂膜，然后将其处理为 疏水性使得沉积在其上的层间膜的一部分减小其流动性，通过该流动性部分均匀地沉积，而不管任何图案宽度。 然后，膜的其余部分以相对增加的流动性沉积在膜的上述部分上。

公开(公告)号：US6075536A

公开(公告)日：2000-06-13

申请号：US138574

申请日：1998-08-24

申请人： Kazuo Kunieda ,  Masaki Hara

发明人： Kazuo Kunieda ,  Masaki Hara

IPC分类号： G06F3/14 ,  G06F3/033 ,  G06F3/048 ,  G06F12/00 ,  G06F17/30 ,  G06T15/10 ,  G06F3/00 ,  G06T17/00

CPC分类号： G06F3/04815 ,  G06T15/10

摘要： To provide an information visualizing system for presenting information of items to a user flexibly and automatically according to user's manipulation to control a virtual space, the information visualizing includes a target object indicator (22) for designating certain of visual object displayed in the virtual space as target objects whereof positional relation to a target indication object displayed in the virtual space satisfies a certain condition; a related-information generator (23 and 24) for generating related-information to be displayed in connection to the target objects according to relational condition designated by the user by processing information concerning the target objects; a target object revisor (26) for controlling the target object indicator to update the target objects automatically at appropriate intervals according to the situation of the virtual space; and a related-information (27) revisor for controlling the related-information generator (23 and 24) to update the related-information automatically at appropriate intervals according to the situation of the virtual space.

摘要翻译： 为了提供信息可视化系统，用于根据用户的操纵灵活自动地向用户呈现项目的信息以控制虚拟空间，所述信息可视化包括目标对象指示符（22），用于指定虚拟空间中显示的某些可视对象为 与虚拟空间中显示的目标指示对象的位置关系的目标对象满足一定条件; 相关信息生成器（23和24），用于根据用户通过处理与目标对象有关的信息指定的关系条件来生成与目标对象相关联地显示的相关信息; 用于根据所述虚拟空间的情况以适当的间隔自动地更新所述目标对象的目标对象指示器（26）; 以及相关信息（27），用于控制相关信息生成器（23和24），以根据虚拟空间的情况以适当的间隔自动更新相关信息。

公开(公告)号：US5889292A

公开(公告)日：1999-03-30

申请号：US571728

申请日：1995-12-13

申请人： Toshiyuki Sameshima ,  Masaki Hara ,  Naoki Sano ,  Dharam Pal Gosain ,  Setsuo Usui

发明人： Toshiyuki Sameshima ,  Masaki Hara ,  Naoki Sano ,  Dharam Pal Gosain ,  Setsuo Usui

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L29/04 ,  H01L27/108 ,  H01L29/76 ,  H01L31/0328

CPC分类号： H01L29/78684 ,  H01L29/66742

摘要： The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.

摘要翻译： 本发明涉及具有由结晶化SiGe形成的沟道区的薄膜晶体管（TFT）结构，并提供具有大载流子迁移率的薄膜晶体管。 在这种情况下，沟道区（4）由结晶的SiGe薄膜形成。

公开(公告)号：US5648276A

公开(公告)日：1997-07-15

申请号：US250679

申请日：1994-05-26

申请人： Masaki Hara ,  Naoki Sano ,  Toshiyuki Sameshima ,  Atsushi Kohno ,  Mitsunobu Sekiya ,  Yasuhiro Kanaya ,  Michihisa Yano

发明人： Masaki Hara ,  Naoki Sano ,  Toshiyuki Sameshima ,  Atsushi Kohno ,  Mitsunobu Sekiya ,  Yasuhiro Kanaya ,  Michihisa Yano

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/324 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/67207 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

摘要： A method and an apparatus for fabricating a thin film semiconductor device are disclosed. An a-Si:H thin film produced on a wafer is melting-recrystallized by irradiating a laser beam to it in a laser annealing chamber to produce a polycrystalline Si thin film. The wafer is then transported to a CVD chamber without exposing it to the outside air. A gate insulating film is produced on a clean surface of the polycrystalline Si thin film in the CVD chamber. In another case, an a-Si:H thin film is melting-recrystallized in the laser annealing chamber to produce a polycrystalline Si thin film and then the wafer is transported to a hydrogenating chamber without exposing it to the outside air. Thereafter the polycrystalline Si thin film is plasma hydrogenated in the hydrogenating chamber. The method and apparatus can fabricate thin film semiconductor devices having a high performance and a high reliability with a good uniformity by making a clean and high quality semiconductor/insulator interface or by hydrogenating a semiconductor thin film without changes in electrical conductivity.

摘要翻译： 公开了一种用于制造薄膜半导体器件的方法和装置。 在晶片上制造的a-Si：H薄膜通过在激光退火室中照射激光束而产生多晶Si薄膜而进行熔融再结晶。 然后将晶片输送到CVD室，而不将其暴露于外部空气。 在CVD室中的多晶Si薄膜的清洁表面上产生栅极绝缘膜。 在另一种情况下，a-Si：H薄膜在激光退火室中熔融再结晶以产生多晶Si薄膜，然后将晶片输送到氢化室，而不暴露于外部空气。 此后，多晶Si薄膜在氢化室中被等离子体氢化。 该方法和装置可以通过制造清洁且高质量的半导体/绝缘体界面或通过不导电导电性的变化来氢化半导体薄膜来制造具有高性能和高可靠性的薄膜半导体器件。

公开(公告)号：US5001744A

公开(公告)日：1991-03-19

申请号：US277568

申请日：1988-11-29

申请人： Tsutomu Nishino ,  Osamu Hirata ,  Shoji Suzuki ,  Masaki Hara ,  Shinji Tsuchida ,  Minoru Ogata

发明人： Tsutomu Nishino ,  Osamu Hirata ,  Shoji Suzuki ,  Masaki Hara ,  Shinji Tsuchida ,  Minoru Ogata

IPC分类号： H04M11/06 ,  H04M11/00

CPC分类号： H04M11/06 ,  Y10S379/902

摘要： Disclosed is a communication system which accommodates at least one central office network line and a plurality of extensions, and which is adapted to control line connection between the central office network line and the plurality of extensions. When a call from the central office network line is detected, it is determined in response to the call whether a control signal characteristic of data communication, such as a CST signal, is being sent by the other party's device. If such a control signal is being sent, a line to which a data processor is connected is selected and connected to the calling line. This makes it possible to connect an information processor and a telephone to a common central office network line, and to connect a call answered by another telephone to a desired information processor rapidly through a simple operation. Accordingly, it is unnecessary to assign a special-purpose central office network line to an information processor. When the information processor is not in use, therefore, another telephone may employ the same line. This improves the efficiency of line utilization.

摘要翻译： 公开了一种通信系统，其容纳至少一个中心局网络线路和多个分机，并且其适于控制中心局网络线路与多个分机之间的线路连接。 当检测到来自中心局网络线路的呼叫时，响应于该呼叫确定对方的设备是否正在发送诸如CST信号的数据通信的控制信号特性。 如果正在发送这样的控制信号，则选择连接数据处理器的线并将其连接到呼叫线路。 这使得可以将信息处理器和电话连接到公共中心局网络线路，并且通过简单的操作将由另一个电话应答的呼叫快速连接到期望的信息处理器。 因此，不需要将专用中心局网线分配给信息处理器。 因此，当信息处理器不使用时，另一个电话机可以使用相同的线路。 这提高了线路利用效率。