公开(公告)号：US20110053384A1

公开(公告)日：2011-03-03

申请号：US12872222

申请日：2010-08-31

申请人： Masaki KOYAMA ,  Kosei NEI ,  Toru HASEGAWA ,  Junpei MOMO ,  Eiji HIGA

发明人： Masaki KOYAMA ,  Kosei NEI ,  Toru HASEGAWA ,  Junpei MOMO ,  Eiji HIGA

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02052 ,  H01L21/268

摘要： An object is to provide a method for manufacturing an SOI substrate including a semiconductor film with high planarity and high crystallinity. After a single crystal semiconductor film is formed over an insulating film by a separation step, a natural oxide film existing on a surface of the semiconductor film is removed and the semiconductor film is irradiated with first laser light and second laser light under an inert gas atmosphere or a reduced-pressure atmosphere. The number of shots of the first laser light that is emitted to an arbitrary point in the semiconductor film is greater than or equal to 7, preferably greater than or equal to 10 and less than or equal to 100. The number of shots of the second laser light that is emitted to an arbitrary point in the semiconductor film is greater than 0 and less than or equal to 2.

摘要翻译： 本发明的目的是提供一种制造包括具有高平坦度和高结晶度的半导体膜的SOI衬底的方法。 在通过分离步骤在绝缘膜上形成单晶半导体膜之后，去除存在于半导体膜表面上的自然氧化膜，并在惰性气体气氛下用第一激光和第二激光照射半导体膜 或减压气氛。 发射到半导体膜中的任意点的第一激光的照射次数大于或等于7，优选大于或等于10并且小于或等于100.第二次的照射次数 发射到半导体膜中的任意点的激光大于0且小于或等于2。

公开(公告)号：US20090111244A1

公开(公告)日：2009-04-30

申请号：US12246577

申请日：2008-10-07

申请人： Shunpei YAMAZAKI ,  Junpei MOMO ,  Fumito ISAKA ,  Eiji HIGA ,  Masaki KOYAMA ,  Akihisa SHIMOMURA

发明人： Shunpei YAMAZAKI ,  Junpei MOMO ,  Fumito ISAKA ,  Eiji HIGA ,  Masaki KOYAMA ,  Akihisa SHIMOMURA

IPC分类号： H01L21/762

CPC分类号： H01L27/1266 ,  B23K26/03 ,  B23K26/083 ,  B23K26/12 ,  B23K26/127 ,  B23K26/14 ,  H01L21/268 ,  H01L21/3247 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/66772

摘要： A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.

摘要翻译： 照射通过激发氢气产生的离子并用离子掺杂装置加速的单晶半导体衬底，从而形成含有大量氢的损伤区域。 在单晶半导体衬底和支撑衬底接合之后，单晶半导体衬底被加热以沿着损伤区域分离。 当与单晶半导体衬底分离的单晶半导体层被加热时，用激光束照射该单晶半导体层。 单晶半导体层通过激光束照射熔融而进行再单晶化，从而回收其结晶性并使单晶半导体层的表面平坦化。

公开(公告)号：US20100096720A1

公开(公告)日：2010-04-22

申请号：US12580532

申请日：2009-10-16

申请人： Hideto OHNUMA ,  Eiji HIGA

发明人： Hideto OHNUMA ,  Eiji HIGA

IPC分类号： H01L29/06 ,  H01L21/762

CPC分类号： H01L21/76254

摘要： To provide an SOI substrate having a high mechanical strength, and a method for manufacturing the SOI substrate, a single crystal semiconductor substrate is irradiated with accelerated ions so that an embrittled region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate; the single crystal semiconductor substrate is bonded to a base substrate with an insulating layer interposed therebetween; the single crystal semiconductor substrate is heated to be separated along the embrittled region, so that a semiconductor layer is provided over the base substrate with the insulating layer interposed therebetween; and a surface of the semiconductor layer is irradiated with a laser beam so that at least a superficial part of the semiconductor layer is melted, whereby at least one of nitrogen, oxygen, and carbon is solid-dissolved in the semiconductor layer.

摘要翻译： 为了提供具有高机械强度的SOI衬底以及SOI衬底的制造方法，用加速离子照射单晶半导体衬底，使得在距离单个表面的表面预定深度的区域中形成脆化区域 晶体半导体衬底; 将单晶半导体基板与绝缘层接合在基底基板上， 单晶半导体衬底被加热以沿着脆化区域分离，从而在绝缘层之间设置在基底衬底上的半导体层; 并且用激光束照射半导体层的表面，使得至少半导体层的表面部分熔化，由此氮，氧和碳中的至少一个固体溶解在半导体层中。

公开(公告)号：US20110076837A1

公开(公告)日：2011-03-31

申请号：US12891271

申请日：2010-09-27

申请人： Hidekazu MIYAIRI ,  Akihisa SHIMOMURA ,  Tatsuya MIZOI ,  Eiji HIGA ,  Yoji NAGANO

发明人： Hidekazu MIYAIRI ,  Akihisa SHIMOMURA ,  Tatsuya MIZOI ,  Eiji HIGA ,  Yoji NAGANO

IPC分类号： H01L21/30

CPC分类号： H01L27/1203 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/78654 ,  H01L51/0027 ,  H01L2224/03552

摘要： A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.

摘要翻译： 证明具有耐热性低的基底衬底和具有高平坦度的非常薄的半导体层的SOI衬底的制造方法。 该方法包括：将氢离子注入到半导体衬底中以形成离子注入层; 键合半导体衬底和诸如玻璃衬底的基底衬底，在其间放置结合层; 加热彼此接合的基板以将半导体基板与基底基板分离，在基底基板上留下薄的半导体层; 用激光照射薄半导体层的表面，以提高平坦度并恢复薄半导体层的结晶度; 并使薄半导体层变薄。 该方法允许在基底衬底上形成厚度为100nm以下的单晶半导体层的SOI衬底。

公开(公告)号：US20090072343A1

公开(公告)日：2009-03-19

申请号：US12207634

申请日：2008-09-10

申请人： Hideto OHNUMA ,  Yoichi IIKUBO ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO ,  Akihisa SHIMOMURA ,  Eiji HIGA ,  Tatsuya MIZOI ,  Yoji NAGANO ,  Fumito ISAKA ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI

发明人： Hideto OHNUMA ,  Yoichi IIKUBO ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO ,  Akihisa SHIMOMURA ,  Eiji HIGA ,  Tatsuya MIZOI ,  Yoji NAGANO ,  Fumito ISAKA ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/00

CPC分类号： H01L27/1266 ,  H01L21/2007 ,  H01L21/76254 ,  H01L21/84 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78654

摘要： A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm.

摘要翻译： 使用其中使用低耐热性衬底作为基底的SOI衬底的高性能半导体器件。 而且，不用化学抛光而形成的高性能半导体器件。 此外，使用该半导体器件的电子设备。 包括绝缘基板上的绝缘层，绝缘层上的接合层和接合层上的单晶半导体层，单晶半导体层上表面的运算平均粗糙度为 大于或等于1nm且小于或等于7nm。 或者，粗糙度的均方根粗糙度可以大于或等于1nm且小于或等于10nm。 或者，粗糙度的最大高度差可以大于或等于5nm且小于或等于250nm。

公开(公告)号：US20110136320A1

公开(公告)日：2011-06-09

申请号：US13019626

申请日：2011-02-02

申请人： Shunpei YAMAZAKI ,  Eiji HIGA ,  Yoji NAGANO ,  Tatsuya MIZOI ,  Akihisa SHIMOMURA

发明人： Shunpei YAMAZAKI ,  Eiji HIGA ,  Yoji NAGANO ,  Tatsuya MIZOI ,  Akihisa SHIMOMURA

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L21/268 ,  H01L21/302 ,  H01L21/84

摘要： To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOL substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered.

摘要翻译： 为了提供具有可实际使用的SOI层的SOI衬底，即使使用诸如玻璃衬底的耐受温度低的衬底的衬底，并且提供使用这种SOI衬底形成的半导体衬底。 为了将单晶半导体衬底接合到诸如玻璃衬底的基底衬底，例如通过用有机硅烷作为源材料通过CVD形成的氧化硅膜被用作接合层。 因此，即使使用具有小于等于700℃的容许温度限制的基板，例如玻璃基板，也可以形成具有强结合部的SOL基板。 用激光束照射与单晶半导体衬底分离的半导体层，使得半导体层的表面平坦化并且其结晶度被回收。