公开(公告)号：US20090072343A1

公开(公告)日：2009-03-19

申请号：US12207634

申请日：2008-09-10

申请人： Hideto OHNUMA ,  Yoichi IIKUBO ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO ,  Akihisa SHIMOMURA ,  Eiji HIGA ,  Tatsuya MIZOI ,  Yoji NAGANO ,  Fumito ISAKA ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI

发明人： Hideto OHNUMA ,  Yoichi IIKUBO ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO ,  Akihisa SHIMOMURA ,  Eiji HIGA ,  Tatsuya MIZOI ,  Yoji NAGANO ,  Fumito ISAKA ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/00

CPC分类号： H01L27/1266 ,  H01L21/2007 ,  H01L21/76254 ,  H01L21/84 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78654

摘要： A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm.

摘要翻译： 使用其中使用低耐热性衬底作为基底的SOI衬底的高性能半导体器件。 而且，不用化学抛光而形成的高性能半导体器件。 此外，使用该半导体器件的电子设备。 包括绝缘基板上的绝缘层，绝缘层上的接合层和接合层上的单晶半导体层，单晶半导体层上表面的运算平均粗糙度为 大于或等于1nm且小于或等于7nm。 或者，粗糙度的均方根粗糙度可以大于或等于1nm且小于或等于10nm。 或者，粗糙度的最大高度差可以大于或等于5nm且小于或等于250nm。

公开(公告)号：US20090137101A1

公开(公告)日：2009-05-28

申请号：US12247470

申请日：2008-10-08

申请人： Shunpei YAMAZAKI ,  Hideto OHNUMA ,  Yoichi IIKUBO ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO

发明人： Shunpei YAMAZAKI ,  Hideto OHNUMA ,  Yoichi IIKUBO ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO

IPC分类号： H01L21/71

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： To provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like is used. The semiconductor layer is transferred to a supporting substrate by the steps of irradiating a semiconductor wafer with ions from one surface to form a damaged layer; forming an insulating layer over one surface of the semiconductor wafer; attaching one surface of the supporting substrate to the insulating layer formed over the semiconductor wafer and performing heat treatment to bond the supporting substrate to the semiconductor wafer; and performing separation at the damaged layer into the semiconductor wafer and the supporting substrate. The damaged layer remaining partially over the semiconductor layer is removed by wet etching and a surface of the semiconductor layer is irradiated with a laser beam.

摘要翻译： 为了提供一种制造具有半导体层的SOI衬底的方法，即使使用诸如玻璃衬底等的耐热温度低的衬底也可以实际使用。 通过以下步骤将半导体层转移到支撑衬底：从一个表面照射半导体晶片以形成损伤层; 在所述半导体晶片的一个表面上形成绝缘层; 将所述支撑基板的一个表面附接到形成在所述半导体晶片上的绝缘层，并进行热处理以将所述支撑基板接合到所述半导体晶片; 并且在所述损伤层处进行到所述半导体晶片和所述支撑基板的分离。 通过湿蚀刻除去半导体层上部分残留的损伤层，并用激光束照射半导体层的表面。

公开(公告)号：US20100006940A1

公开(公告)日：2010-01-14

申请号：US12497720

申请日：2009-07-06

申请人： Tetsuya KAKEHATA ,  Hideto OHNUMA ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO

发明人： Tetsuya KAKEHATA ,  Hideto OHNUMA ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/762

CPC分类号： H01L27/1218 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/78603 ,  H01L31/0352

摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.

摘要翻译： 本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。 另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。 在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。 通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。 改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。

公开(公告)号：US20110316082A1

公开(公告)日：2011-12-29

申请号：US13230086

申请日：2011-09-12

申请人： Tetsuya KAKEHATA ,  Hideto OHNUMA ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO

发明人： Tetsuya KAKEHATA ,  Hideto OHNUMA ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO

IPC分类号： H01L29/786 ,  H01L29/02

CPC分类号： H01L27/1218 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/78603 ,  H01L31/0352

摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.

摘要翻译： 本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。 另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。 在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。 通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。 改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。

公开(公告)号：US20070190235A1

公开(公告)日：2007-08-16

申请号：US11671225

申请日：2007-02-05

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Yoshiaki YAMAMOTO ,  Miki KATAYAMA ,  Kohei YOKOYAMA ,  Rie MATSUBARA ,  Takahiro KAWAKAMI

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Yoshiaki YAMAMOTO ,  Miki KATAYAMA ,  Kohei YOKOYAMA ,  Rie MATSUBARA ,  Takahiro KAWAKAMI

IPC分类号： B05D5/12 ,  B05D5/06 ,  C23C8/00 ,  C23C16/00

CPC分类号： H01L51/001 ,  B05D1/60 ,  B05D5/061 ,  C23C14/24 ,  H01L51/0027

摘要： An object of the present invention is to provide a film forming method for forming a film with reduced defect and to provide a film forming method for forming a film with a uniform quality. In addition, another object is to provide a manufacturing method of a light emitting element which can be driven with low voltage. Further, another object is to provide a manufacturing method of a light emitting element with high light emission efficiency. A film with reduced defect and a uniform quality can be formed by fixing a substrate to a substrate holding unit so that at least a part of a surface of the substrate is exposed, evaporating a vapor deposition material from an evaporation source filled with the vapor deposition material, irradiating the vapor deposition material which is evaporated with a laser beam, and depositing the vapor deposition material on the surface of the substrate.

摘要翻译： 本发明的目的是提供一种用于形成缺陷少的膜的成膜方法，并且提供一种质量均匀的膜形成方法。 此外，另一个目的是提供一种能够以低电压驱动的发光元件的制造方法。 此外，另一个目的是提供一种具有高发光效率的发光元件的制造方法。 可以通过将基板固定到基板保持单元上，使得基板的表面的至少一部分被暴露，从填充有气相沉积的蒸发源蒸发蒸镀材料， 照射用激光束蒸发的蒸镀材料，将该蒸镀材料沉积在基板的表面上。

公开(公告)号：US20070194321A1

公开(公告)日：2007-08-23

申请号：US11673153

申请日：2007-02-09

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Takahiro KAWAKAMI ,  Yoshiaki YAMAMOTO ,  Miki KATAYAMA ,  Kohei YOKOYAMA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Takahiro KAWAKAMI ,  Yoshiaki YAMAMOTO ,  Miki KATAYAMA ,  Kohei YOKOYAMA

IPC分类号： H01L29/04

CPC分类号： H05B33/22 ,  H01L51/5278 ,  H05B33/10

摘要： It is an object of the present invention to provide a light emitting element which can be driven at a low voltage. Other objects of the present invention are to provide a light emitting element with a high luminescent efficiency; a light emitting element with a high luminance; a light emitting element having long-life luminescence; a light emitting element and an electronic device having reduced power consumption; and a light emitting element and an electronic device which can be manufactured at low cost. The light emitting element has a light emitting layer and a barrier layer between a first electrode and a second electrode, the light emitting layer contains a base material and an impurity element, and the barrier layer is provided so as to be in contact with the first electrode. Light emission is obtained when a voltage is applied such that a potential of the second electrode becomes higher than a potential of the first electrode.

摘要翻译： 本发明的目的是提供一种可以在低电压下驱动的发光元件。 本发明的其他目的是提供一种具有高发光效率的发光元件; 具有高亮度的发光元件; 具有长寿命发光的发光元件; 具有降低的功耗的发光元件和电子设备; 以及可以以低成本制造的发光元件和电子设备。 发光元件在第一电极和第二电极之间具有发光层和阻挡层，发光层含有基材和杂质元素，并且阻挡层设置成与第一电极和第二电极接触。 电极。 当施加电压使得第二电极的电位变得高于第一电极的电位时获得发光。

公开(公告)号：US20070194306A1

公开(公告)日：2007-08-23

申请号：US11674428

申请日：2007-02-13

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Takahiro KAWAKAMI ,  Yoshiaki YAMAMOTO ,  Miki KATAYAMA ,  Kohei YOKOYAMA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Takahiro KAWAKAMI ,  Yoshiaki YAMAMOTO ,  Miki KATAYAMA ,  Kohei YOKOYAMA

IPC分类号： H01L29/08

CPC分类号： C09K11/08 ,  H01L51/5088 ,  H05B33/22

摘要： It is an object to provide a light emitting element capable of low-voltage driving; with high luminous efficiency; with high emission luminance; and with long emission lifetime. It is another object to provide a light emitting device and an electronic appliance in which power consumption is reduced; and which can be manufactured at low cost. A light emitting element is provided, including a light emitting layer and a layer including a composite material between a first electrode and a second electrode, where the light emitting layer includes a base material and an impurity element, the layer including the composite material includes an organic compound and an inorganic compound, the layer including the composite material is provided to be in contact with the second electrode, and light emission is obtained by application of a voltage so that an electric potential of the second electrode is higher than that of the first electrode.

摘要翻译： 本发明的目的是提供一种能够进行低电压驱动的发光元件。 发光效率高; 具有高发光亮度; 并具有长的发光寿命。 另一个目的是提供一种减少功耗的发光装置和电子设备; 并且可以以低成本制造。 提供了一种发光元件，其包括发光层和在第一电极和第二电极之间包括复合材料的层，其中发光层包括基底材料和杂质元素，所述包括复合材料的层包括 有机化合物和无机化合物，包括复合材料的层被设置为与第二电极接触，并且通过施加电压获得发光，使得第二电极的电位高于第一电极的电位 电极。

公开(公告)号：US20100237354A1

公开(公告)日：2010-09-23

申请号：US12794120

申请日：2010-06-04

申请人： Yoshiaki YAMAMOTO ,  Koichiro TANAKA ,  Atsuo ISOBE ,  Daisuke OHGARANE ,  Shunpei YAMAZAKI

发明人： Yoshiaki YAMAMOTO ,  Koichiro TANAKA ,  Atsuo ISOBE ,  Daisuke OHGARANE ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786

CPC分类号： H01L21/6835 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/84 ,  H01L23/544 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L27/12 ,  H01L29/78603 ,  H01L29/78648 ,  H01L2221/6835 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/6677 ,  H01L2224/16 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/838 ,  H01L2224/85 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01Q1/38 ,  H01Q9/285 ,  H01Q23/00 ,  Y10S438/982 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.

摘要翻译： 本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜 晶体管，以及电路或半导体器件到具有柔性的衬底。 根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的 薄膜晶体管转置到具有导电膜等的基板上。 根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

公开(公告)号：US20100304506A1

公开(公告)日：2010-12-02

申请号：US12850292

申请日：2010-08-04

申请人： Koichiro TANAKA ,  Yoshiaki YAMAMOTO

发明人： Koichiro TANAKA ,  Yoshiaki YAMAMOTO

IPC分类号： H01L21/66 ,  H01L21/268 ,  B23K26/06

CPC分类号： H01L21/02686 ,  B23K26/04 ,  B23K26/0738 ,  H01L21/02532 ,  H01L21/02689 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285

摘要： The present invention is to provide a laser irradiation method for performing homogeneous laser irradiation to the irradiation object even when the thickness of the irradiation object is not even. In the case of irradiating the irradiation object having uneven thickness, the laser irradiation is performed while keeping the distance between the irradiation object and the lens for condensing the laser beam on the surface of the irradiation object constant by using an autofocusing mechanism. In particular, when the irradiation object is irradiated with the laser beam by moving the irradiation object relative to the laser beam in the first direction and the second direction of the beam spot formed on the irradiation surface, the distance between the irradiation object and the lens is controlled by the autofocusing mechanism before the irradiation object is moved in the first and second directions.

摘要翻译： 本发明提供一种激光照射方法，即使在照射物体的厚度不均匀的情况下也能够对照射物进行均匀的激光照射。 在照射具有不均匀厚度的照射物体的情况下，通过使用自动聚焦机构，在照射物体和透镜之间的距离保持在照射物体的表面上恒定的同时，进行激光照射。 特别地，当通过在照射表面上形成的第一方向和束点的第二方向上相对于激光束照射被照射物体照射激光束时，照射物体与透镜之间的距离 在照射对象沿第一和第二方向移动之前由自动对焦机构控制。

公开(公告)号：US20090250590A1

公开(公告)日：2009-10-08

申请号：US12480984

申请日：2009-06-09

申请人： Koichiro TANAKA ,  Yoshiaki YAMAMOTO

发明人： Koichiro TANAKA ,  Yoshiaki YAMAMOTO

IPC分类号： G02B27/40 ,  H01L21/268

CPC分类号： H01L21/02686 ,  B23K26/04 ,  B23K26/0738 ,  H01L21/02532 ,  H01L21/02689 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285

摘要： The present invention is to provide a laser irradiation method for performing homogeneous laser irradiation to the irradiation object even when the thickness of the irradiation object is not even. In the case of irradiating the irradiation object having uneven thickness, the laser irradiation is performed while keeping the distance between the irradiation object and the lens for condensing the laser beam on the surface of the irradiation object constant by using an autofocusing mechanism. In particular, when the irradiation object is irradiated with the laser beam by moving the irradiation object relative to the laser beam in the first direction and the second direction of the beam spot formed on the irradiation surface, the distance between the irradiation object and the lens is controlled by the autofocusing mechanism before the irradiation object is moved in the first and second directions.

摘要翻译： 本发明提供一种激光照射方法，即使在照射物体的厚度不均匀的情况下也能够对照射物进行均匀的激光照射。 在照射具有不均匀厚度的照射物体的情况下，通过使用自动聚焦机构，在照射物体和透镜之间的距离保持在照射物体的表面上恒定的同时，进行激光照射。 特别地，当通过在照射表面上形成的第一方向和束点的第二方向上相对于激光束照射被照射物体照射激光束时，照射物体与透镜之间的距离 在照射对象沿第一和第二方向移动之前由自动对焦机构控制。