公开(公告)号：US08124315B2

公开(公告)日：2012-02-28

申请号：US11662219

申请日：2005-09-07

申请人： Hiroyoshi Sekiguchi ,  Kazunori Ito ,  Hiroshi Deguchi ,  Hiroko Ohkura ,  Masaki Kato ,  Mikiko Takada

发明人： Hiroyoshi Sekiguchi ,  Kazunori Ito ,  Hiroshi Deguchi ,  Hiroko Ohkura ,  Masaki Kato ,  Mikiko Takada

IPC分类号： G11B7/24

CPC分类号： G11B7/252 ,  G11B7/24035 ,  G11B7/24079 ,  G11B7/24082 ,  G11B2007/2431 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316

摘要： An optical recording medium contains a recording layer being composed of a phase-change recording material where at least four elements, Ga, Sb, Sn and Ge are contained and the transfer linear velocity is 20 m/s to 30 m/s, and when the wavelength of a recording/reproducing light is within the range of 650 nm to 665 nm and the recording linear velocity is 20 m/s to 28 m/s, the refractive index Nc and the extinction coefficient Kc in a crystalline state and the refractive index Na and the extinction coefficient Ka in an amorphous state in the recording layer respectively satisfy the following numerical expressions: 2.0≦Nc≦3.0, 4.0≦Kc≦5.0, 4.0≦Na≦5.0, and 2.5≦Ka≦3.1, and information is recordable at the range of 20 m/s to 28 m/s of recording linear velocity.

摘要翻译： 光记录介质包含由相变记录材料组成的记录层，其中包含至少四种元素Ga，Sb，Sn和Ge，并且传输线速度为20m / s至30m / s，并且当 记录/再现光的波长在650nm至665nm的范围内，并且记录线速度为20m / s至28m / s，结晶状态下的折射率Nc和消光系数Kc以及折射率 记录层中的非晶态的Na指数Na和消光系数Ka分别满足以下数值表达式：2.0＆nlE; Nc＆nlE; 3.0,4.0＆nlE; Kc＆nlE; 5.0,4.0＆nlE; Na＆NlE; 5.0和2.5＆amp; 并且信息可记录在记录线速度的20m / s至28m / s的范围内。

公开(公告)号：US07800993B2

公开(公告)日：2010-09-21

申请号：US11662682

申请日：2005-09-13

申请人： Masaki Kato ,  Kazunori Ito ,  Hiroshi Deguchi ,  Hiroko Ohkura ,  Mikiko Takada ,  Hiroyoshi Sekiguchi

发明人： Masaki Kato ,  Kazunori Ito ,  Hiroshi Deguchi ,  Hiroko Ohkura ,  Mikiko Takada ,  Hiroyoshi Sekiguchi

IPC分类号： G11B7/00

CPC分类号： G11B7/0062 ,  G11B7/00375

摘要： A recording method of an optical recording medium comprises irradiating the medium with a laser having m pulse sets each comprising a heating pulse and a cooling pulse, in which m is a natural number; and scanning the medium with the laser at a scanning speed v to record marks each of a length nT, in which n is a natural number of 3 or more and T is a clock cycle, wherein a length TCPn of a final cooling pulse is determined in accordance with the scanning speed v using the following functions, in v

摘要翻译： 光记录介质的记录方法包括用m个脉冲组的激光照射介质，每个脉冲组包括加热脉冲和冷却脉冲，其中m是自然数; 并且以扫描速度v用激光扫描介质，以记录每个长度为nT的标记，其中n为3或更大的自然数，T为时钟周期，其中确定最终冷却脉冲的长度TCPn 根据使用以下功能的扫描速度v，在v v0，TCPn / T = f1，n（v）v v0，TCPn / T = f2，n（v）中，其中，f1，n（v） f2，n（v）表示扫描速度v的连续函数，满足异常标记的存在比为1.0×10 -4以下，v0为可选择扫描速度的条件。

公开(公告)号：US20090046550A1

公开(公告)日：2009-02-19

申请号：US11662682

申请日：2005-09-13

申请人： Masaki Kato ,  Kazunori Ito ,  Hiroshi Deguchi ,  Hiroko Ohkura ,  Mikiko Takada ,  Hiroyoshi Sekiguchi

发明人： Masaki Kato ,  Kazunori Ito ,  Hiroshi Deguchi ,  Hiroko Ohkura ,  Mikiko Takada ,  Hiroyoshi Sekiguchi

IPC分类号： G11B7/00

CPC分类号： G11B7/0062 ,  G11B7/00375

摘要： A recording method of an optical recording medium comprises irradiating the medium with a laser having m pulse sets each comprising a heating pulse and a cooling pulse, in which m is a natural number; and scanning the medium with the laser at a scanning speed v to record marks each of a length nT, in which n is a natural number of 3 or more and T is a clock cycle, wherein a length TCPn of a final cooling pulse is determined in accordance with the scanning speed v using the following functions, in v

摘要翻译： 光记录介质的记录方法包括用m个脉冲组的激光照射介质，每个脉冲组包括加热脉冲和冷却脉冲，其中m是自然数; 并且以扫描速度v用激光扫描介质，以记录每个长度为nT的标记，其中n为3或更大的自然数，T为时钟周期，其中确定最终冷却脉冲的长度TCPn 根据使用以下功能的扫描速度v，在v v0，TCPn / T = f1，n（v）v v0，TCPn / T = f2，n（v）中，其中，f1，n（v） f2，n（v）各自表示扫描速度v的连续函数，满足异常标记的存在率为1.0×10 -4以下，v0为可选择扫描速度的条件。

公开(公告)号：US20080050673A1

公开(公告)日：2008-02-28

申请号：US11662219

申请日：2005-09-07

申请人： Hiroyoshi Sekiguchi ,  Kazunori Ito ,  Hiroshi Deguchi ,  Hiroko Ohkura ,  Masaki Kato ,  Mikiko Takada

发明人： Hiroyoshi Sekiguchi ,  Kazunori Ito ,  Hiroshi Deguchi ,  Hiroko Ohkura ,  Masaki Kato ,  Mikiko Takada

IPC分类号： G11B7/24

CPC分类号： G11B7/252 ,  G11B7/24035 ,  G11B7/24079 ,  G11B7/24082 ,  G11B2007/2431 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316

摘要： An optical recording medium contains a recording layer being composed of a phase-change recording material where at least four elements, Ga, Sb, Sn and Ge are contained and the transfer linear velocity is 20 m/s to 30 m/s, and when the wavelength of a recording/reproducing light is within the range of 650 nm to 665 nm and the recording linear velocity is 20 m/s to 28 m/s, the refractive index Nc and the extinction coefficient Kc in a crystalline state and the refractive index Na and the extinction coefficient Ka in an amorphous state in the recording layer respectively satisfy the following numerical expressions: 2.0≦Nc≦3.0, 4.0≦Kc≦5.0, 4.0≦Na≦5.0, and 2.5≦Ka≦3.1, and information is recordable at the range of 20 m/s to 28 m/s of recording linear velocity.

摘要翻译： 光记录介质包含由相变记录材料组成的记录层，其中包含至少四种元素Ga，Sb，Sn和Ge，并且传输线速度为20m / s至30m / s，并且当 记录/再现光的波长在650nm至665nm的范围内，并且记录线速度为20m / s至28m / s，结晶状态下的折射率Nc和消光系数Kc以及折射率 记录层中的非晶态的Na指数Na和消光系数Ka分别满足下列数值式：2.0 <= Nc <= 3.0,4.0 <= Kc <= 5.0,4.0 <= Na <= 5.0和2.5 < Ka <= 3.1，信息可记录在20m / s至28m / s的记录线速度范围内。

公开(公告)号：US20060246270A1

公开(公告)日：2006-11-02

申请号：US11441284

申请日：2006-05-25

申请人： Mikiko Takada ,  Kazunori Ito ,  Hiroshi Deguchi ,  Masaki Kato ,  Hiroko Ohkura ,  Hiroyoshi Sekiguchi

发明人： Mikiko Takada ,  Kazunori Ito ,  Hiroshi Deguchi ,  Masaki Kato ,  Hiroko Ohkura ,  Hiroyoshi Sekiguchi

IPC分类号： B32B3/00

CPC分类号： G11B7/243 ,  G11B7/2403 ,  G11B7/258 ,  G11B7/259 ,  G11B2007/2431 ,  G11B2007/24312 ,  G11B2007/24314 ,  Y10T428/24917

摘要： An optical recording medium including: a substrate having translucency; a first protective layer thereon; a recording layer composed of a phase-change material; a second protective layer; and a reflective layer, wherein laser beam irradiation causes phase-change of the recording layer between a crystalline phase and an amorphous phase thereby at least one of to rewrite and to record information, wherein the phase-change material comprises Ga, Sb and Sn, Ga content, Sb content, and Sn content satisfy the following formula, and the total content of Ga, Sb and Sn is at least 80 atomic % of the entire phase-change material: GaαSbβSnγ (where, α+β+γ=100 atomic %), where 20≦−2.75α+0.708β+1.18γ−7.56≦43, and α/(α+β)≦0.12.

摘要翻译： 一种光记录介质，包括：具有半透明性的基板; 其上的第一保护层; 由相变材料构成的记录层; 第二保护层; 和反射层，其中激光束照射引起记录层在结晶相和非晶相之间的相变，由此重写和记录信息中的至少一个，其中所述相变材料包括Ga，Sb和Sn， Ga含量，Sb含量和Sn含量满足下式，并且Ga，Sb和Sn的总含量为整个相变材料的至少80原子％：<？in-line-formula description =“In- 线公式“end =”lead“？> GaSb Sn gamma gamma gamma gamma gamma gamma gamma gamma））））））））））））））））））））））））））） ，其中20 <= - 2.75alpha + 0.708beta + 1.18gamma-7.56 <= 43，alpha /（α+β），<？in-line-formula description =“In-line Formulas”end =“tail” <= 0.12。

公开(公告)号：US07485357B2

公开(公告)日：2009-02-03

申请号：US11441284

申请日：2006-05-25

申请人： Mikiko Takada ,  Kazunori Ito ,  Hiroshi Deguchi ,  Masaki Kato ,  Hiroko Ohkura ,  Hiroyoshi Sekiguchi

发明人： Mikiko Takada ,  Kazunori Ito ,  Hiroshi Deguchi ,  Masaki Kato ,  Hiroko Ohkura ,  Hiroyoshi Sekiguchi

IPC分类号： B32B3/02

CPC分类号： G11B7/243 ,  G11B7/2403 ,  G11B7/258 ,  G11B7/259 ,  G11B2007/2431 ,  G11B2007/24312 ,  G11B2007/24314 ,  Y10T428/24917

摘要： An optical recording medium including: a substrate having translucency; a first protective layer thereon; a recording layer composed of a phase-change material; a second protective layer; and a reflective layer, wherein laser beam irradiation causes phase-change of the recording layer between a crystalline phase and an amorphous phase thereby at least one of to rewrite and to record information, wherein the phase-change material comprises Ga, Sb and Sn, Ga content, Sb content, and Sn content satisfy the following formula, and the total content of Ga, Sb and Sn is at least 80 atomic % of the entire phase-change material: GaαSbβSnγ(where, α+β+γ=100 atomic %), where 20≦−2.75α+0.708β+1.18γ−7.56≦43, and α/(α+β)≦0.12.

摘要翻译： 一种光记录介质，包括：具有半透明性的基板; 其上的第一保护层; 由相变材料构成的记录层; 第二保护层; 和反射层，其中激光束照射引起记录层在结晶相和非晶相之间的相变，由此重写和记录信息中的至少一个，其中所述相变材料包括Ga，Sb和Sn， Ga含量，Sb含量和Sn含量满足下式，并且Ga，Sb和Sn的总含量为整个相变材料的至少80原子％：<？in-line-formula description =“In- 线公式“end =”lead“？> GaalphaSbbetaSngamma（其中，α+β+γ= 100原子％），<？in-line-formula description =”In-line formula“end =”tail“？> -line-formula description =“In-Line Formulas”end =“lead”？>其中20 <= - 2.75alpha + 0.708beta + 1.18gamma-7.56 <= 43，<？in-line-formula description =“In- 行公式“end =”tail“？> <？in-line-formula description =”In-line Formulas“end =”lead“？>和alpha /（alpha + beta）<= 0.12。<？in-line- 公式描述=“内联公式”end =“tail”？>

公开(公告)号：US07438965B2

公开(公告)日：2008-10-21

申请号：US11244346

申请日：2005-10-04

申请人： Hiroko Ohkura ,  Kazunori Ito ,  Hiroshi Deguchi ,  Masaki Kato ,  Mikiko Abe ,  Hiroyoshi Sekiguchi ,  Makoto Harigaya ,  Masaru Shinkai

发明人： Hiroko Ohkura ,  Kazunori Ito ,  Hiroshi Deguchi ,  Masaki Kato ,  Mikiko Abe ,  Hiroyoshi Sekiguchi ,  Makoto Harigaya ,  Masaru Shinkai

IPC分类号： B32B3/02

CPC分类号： C23C14/3414 ,  G11B7/243 ,  G11B7/259 ,  G11B7/266 ,  G11B7/268 ,  G11B2007/24308 ,  G11B2007/2431 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316

摘要： It is an object of the present invention to provide a phase-change information recording medium, and the like, which is easy to perform initial crystallization, exhibits good recording sensitivity at a linear velocity as high as 10 double speeds or more with as much capacity as DVD-ROM, is capable of overwrite recording and has good storage reliability. For this purpose, the phase-change information recording medium comprises a substrate and at least a first protective layer, a phase-change recording layer, a second protective layer, and a reflective layer disposed on the substrate in one of this sequence and reverse sequence wherein the phase-change recording layer comprises a composition expressed by SnαSbβGaγGeδTeε−Xζ (In this regard, X represents at lease one element selected from Ag, Zn, In and Cu. α, β, γ, δ, ε and ζ represent composition ratio (atomic percent) of each element and are expressed as 5≦α≦25, 40≦β≦91, 2≦γ≦20, 2≦δ≦20, 0≦ε≦10, 0≦ζ≦10 and α+β+γ+δ+ε+ζ=100).

摘要翻译： 本发明的目的是提供一种易于进行初始结晶的相变信息记录介质等，其线速度高达10倍以上的双倍速度以上，具有良好的记录灵敏度。 作为DVD-ROM，能够覆盖记录并具有良好的存储可靠性。 为此，相变信息记录介质包括基板和至少第一保护层，相变记录层，第二保护层和设置在该基板上的反射层中的一个序列和反序列 其中所述相变记录层包含由SnζSb Ga gamma> Ge <<<<<<<<<<<<<<<<<<<<<<<<<<<<<<< （在这方面，X表示至少一个选自Ag，Zn，In和Cu的元素，α，β，γ，δ，ε和zeta表示 每个元素的组成比（原子百分比），并表示为5 <=α<= 25,40 <=β<= 91,2 <=γ<= 20,2 <=Δ<= 20,0 < = 10,0 <= zeta <= 10，α+β+γ+δ+ε+ zeta = 100）。

公开(公告)号：US07626915B2

公开(公告)日：2009-12-01

申请号：US11302276

申请日：2005-12-14

申请人： Hiroshi Deguchi ,  Kazunori Ito ,  Eiko Hibino ,  Hiroko Ohkura ,  Masaki Kato ,  Mikiko Abe ,  Hiroyoshi Sekiguchi

发明人： Hiroshi Deguchi ,  Kazunori Ito ,  Eiko Hibino ,  Hiroko Ohkura ,  Masaki Kato ,  Mikiko Abe ,  Hiroyoshi Sekiguchi

IPC分类号： G11B7/24

CPC分类号： G11B7/006 ,  G11B7/243 ,  G11B2007/24312

摘要： The phase-change optical recording medium having a substrate, and at least a first protective layer, a recording layer composed of a phase-change material, a second protective layer and a reflective layer disposed on the substrate in this sequence has a maximum recording linear velocity VH of 20 m/s to 60 m/s, a range of linear velocity recordable even when the recording linear velocity is continuously changed of 0.3VH to 1.0VH, and no occurrence of crystals causing a reproduction error in recorded marks.

摘要翻译： 具有基板的至少第一保护层，由相变材料，第二保护层和设置在该基板上的反射层构成的记录层的相变光学记录介质具有最大的记录线性 速度VH为20m / s至60m / s，即使记录线速度连续地变化为0.3VH至1.0VH也能够记录的线速度范围，并且不会导致记录标记中引起再现错误的晶体。

公开(公告)号：US20060209658A1

公开(公告)日：2006-09-21

申请号：US11371463

申请日：2006-03-08

申请人： Masaki Kato ,  Kazunori Ito ,  Hiroshi Deguchi ,  Hiroko Ohkura ,  Mikiko Abe ,  Hiroyoshi Sekiguchi

发明人： Masaki Kato ,  Kazunori Ito ,  Hiroshi Deguchi ,  Hiroko Ohkura ,  Mikiko Abe ,  Hiroyoshi Sekiguchi

IPC分类号： G11B7/0045

CPC分类号： G11B7/00456 ,  G11B7/00454

摘要： To provide a method of recording information to an optical recording medium comprising recording a mark of time length nT (n: natural number of 3 or more, T: clock cycle) in an optical recording medium capable of supporting different recording speeds and having constant information line density, and irradiating the optical recording medium, the optical recording medium irradiated with light of alternating m1 heating pulses of power Pw and m1 cooling pulses of power Pc (where m1 is a natural number smaller than n) provided v

摘要翻译： 为了提供将信息记录到光学记录介质的方法，包括在能够支持不同记录速度并具有恒定信息的光学记录介质中记录时间长度nT（n：3或更多的自然数，T：时钟周期）的标记 线密度，并照射光记录介质，照射光交替m 1加热脉冲功率Pw和m 1个功率Pc的冷却脉冲的光的光记录介质（其中 V provided provided provided provided provided provided provided provided provided provided provided provided provided provided provided provided provided provided provided provided provided provided provided provided speed speed speed speed speed speed speed speed speed speed speed speed speed speed speed speed speed speed speed speed speed speed speed speed speed speed 每个光学记录介质是独特的），用功率Pw和功率Pc的m 2 2个冷却脉冲交替的m 2加热脉冲的光照射的光学记录介质（其中m < 其中条件n / m 1 > = n / m _{小于n的自然数） > 2 。}

公开(公告)号：US20060088684A1

公开(公告)日：2006-04-27

申请号：US11255619

申请日：2005-10-20

申请人： Mikiko Abe ,  Kazunori Ito ,  Hiroshi Deguchi ,  Masaki Kato ,  Hiroko Ohkura ,  Hiroyoshi Sekiguchi

发明人： Mikiko Abe ,  Kazunori Ito ,  Hiroshi Deguchi ,  Masaki Kato ,  Hiroko Ohkura ,  Hiroyoshi Sekiguchi

IPC分类号： B32B3/02

CPC分类号： G11B7/257 ,  G11B7/2403 ,  G11B7/24079 ,  G11B7/243 ,  G11B2007/2431 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/2571 ,  G11B2007/25715

摘要： An optical recording medium including a substrate on which a first protective layer, an interface layer, a phase change recording layer, a second protective layer, an optional third protective layer (anti-sulfuration layer), and a reflective layer are accumulated in this order. The first protective layer contains a mixture of ZnS and SiO2 The interface layer contains a material containing Si and O. The phase change recording layer contains Sn, Sb, Ga, and Ge. In addition, the content of Si and O in the interface layer is 10 to 60% greater than a content of Si and O in the first protective layer.

摘要翻译： 包括其上以第一保护层，界面层，相变记录层，第二保护层，任选的第三保护层（抗硫化层）和反射层在其上的顺序累积的基板的光学记录介质 。 第一保护层含有ZnS和SiO 2的混合物界面层含有含有Si和O的材料。相变记录层包含Sn，Sb，Ga和Ge。 此外，界面层中的Si和O的含量比第一保护层中的Si和O的含量高10〜60％。