公开(公告)号：US07395707B2

公开(公告)日：2008-07-08

申请号：US11505987

申请日：2006-08-18

申请人： Izumi Watanabe ,  Junichi Horie ,  Keiichi Nakada ,  Kei Ueyama ,  Masamichi Yamada

发明人： Izumi Watanabe ,  Junichi Horie ,  Keiichi Nakada ,  Kei Ueyama ,  Masamichi Yamada

IPC分类号： G01F1/68

CPC分类号： G01F1/6845 ,  G01F1/6842 ,  G01F1/692 ,  G01F1/698 ,  G01F1/699

摘要： A flow rate sensor has a problem that a resistance value of a heat generating resistor itself varies and sensor characteristics are changed during use of the sensor for a long term. Also, the temperature of the heat generating resistor must be adjusted on a circuit substrate with a resistance constituting one side of a fixed temperature difference control circuit, and this has been one of factors pushing up the production cost. All resistances used for fixed temperature difference control are formed on the same substrate as temperature sensitive resistors of the same material. This enables all the resistances for the fixed temperature difference control to be exposed to the same environmental conditions. Hence, even when the resistances change over time, the changes over time occur substantially at the same tendency. Since the resistances for the fixed temperature difference control change over time essentially at the same rate, a resulting output error is very small.

摘要翻译： 流量传感器具有长期使用传感器时发热电阻器本身的电阻值变化，传感器特性变化的问题。 此外，发热电阻器的温度必须在构成固定温度差控制电路的一侧的电阻的电路基板上进行调整，这是提高生产成本的因素之一。 用于固定温差控制的所有电阻都与相同材料的感温电阻器形成在同一基板上。 这使得固定温差控制的所有电阻能够暴露在相同的环境条件下。 因此，即使电阻随着时间的推移而变化，随着时间的推移发生大体上同样的变化。 由于固定温差控制的电阻基本上以相同的速率变化，所以产生的输出误差非常小。

公开(公告)号：US07228614B2

公开(公告)日：2007-06-12

申请号：US11088175

申请日：2005-03-24

申请人： Masamichi Yamada ,  Junichi Horie ,  Izumi Watanabe ,  Keiichi Nakada

发明人： Masamichi Yamada ,  Junichi Horie ,  Izumi Watanabe ,  Keiichi Nakada

IPC分类号： H04R31/00

CPC分类号： G01F1/692 ,  G01F1/6845 ,  Y10T29/49002 ,  Y10T29/49007 ,  Y10T29/4902

摘要： A gas flowmeter capable of reducing a secular change comprises a silicon semiconductor substrate formed with a cavity and a heat element formed above the cavity of the semiconductor substrate by way of an insulating film. The heat element is a silicon (Si) semiconductor thin film impurity-doped at high concentration. Stoichiometrically stable silicon nitride (Si3N4) thin films as barrier layers which less permeate and less absorb hydrogen in the heat generating temperature range of the heat element are formed above and below the silicon (Si) semiconductor thin film.

摘要翻译： 能够减少长期变化的气体流量计包括形成有空腔的硅半导体衬底和通过绝缘膜形成在半导体衬底的空腔上方的加热元件。 热元件是以高浓度杂质掺杂的硅（Si）半导体薄膜。 在上面形成作为在热元件的发热温度范围内较少渗透并且较少吸收氢的阻挡层的化学计量稳定的氮化硅（Si 3 N 4 N 4）薄膜， 在硅（Si）半导体薄膜之下。

公开(公告)号：US20050268713A1

公开(公告)日：2005-12-08

申请号：US11187823

申请日：2005-07-25

申请人： Izumi Watanabe ,  Junichi Horie ,  Keiichi Nakada ,  Kei Ueyama ,  Masamichi Yamada

发明人： Izumi Watanabe ,  Junichi Horie ,  Keiichi Nakada ,  Kei Ueyama ,  Masamichi Yamada

IPC分类号： G01F1/684 ,  F02D35/00 ,  F02D41/18 ,  F02D45/00 ,  G01F1/692 ,  G01F1/698 ,  G01F1/699 ,  G01F1/68

CPC分类号： G01F1/6845 ,  G01F1/6842 ,  G01F1/692 ,  G01F1/698 ,  G01F1/699

摘要： A flow rate sensor has a problem that a resistance value of a heat generating resistor itself varies and sensor characteristics are changed during use of the sensor for a long term. Also, the temperature of the heat generating resistor must be adjusted on a circuit substrate with a resistance constituting one side of a fixed temperature difference control circuit, and this has been one of factors pushing up the production cost. All resistances used for fixed temperature difference control are formed on the same substrate as temperature sensitive resistors of the same material. This enables all the resistances for the fixed temperature difference control to be exposed to the same environmental conditions. Hence, even when the resistances change over time, the changes over time occur substantially at the same tendency. Since the resistances for the fixed temperature difference control change over time essentially at the same rate, a resulting output error is very small.

摘要翻译： 流量传感器具有长期使用传感器时发热电阻器本身的电阻值变化，传感器特性变化的问题。 此外，发热电阻器的温度必须在构成固定温度差控制电路的一侧的电阻的电路基板上进行调整，这是提高生产成本的因素之一。 用于固定温差控制的所有电阻都与相同材料的感温电阻器形成在同一基板上。 这使得固定温差控制的所有电阻能够暴露在相同的环境条件下。 因此，即使电阻随着时间的推移而变化，随着时间的推移发生大体上同样的变化。 由于固定温差控制的电阻基本上以相同的速率变化，所以产生的输出误差非常小。

公开(公告)号：US20060144138A1

公开(公告)日：2006-07-06

申请号：US10546174

申请日：2004-05-26

申请人： Masamichi Yamada ,  Izumi Watanabe ,  Keiichi Nakada ,  Junichi Horie

发明人： Masamichi Yamada ,  Izumi Watanabe ,  Keiichi Nakada ,  Junichi Horie

IPC分类号： G01F1/68

CPC分类号： G01F1/6845 ,  G01F1/698

摘要： A thermal flow sensor which is fabricated at a low cost and has improved reliability. Over a cavity (7) formed in a semiconductor substrate (2), at least a heating resistance (4) is formed near the center of the cavity with an electrical insulation film interposed between the heating resistance and the cavity. The temperature (Th) of the heating resistance (4) is controlled to be higher than the medium temperature (Ta) by a constant temperature ({Th=Th−Ta). A distance (Ws) in the direction of airflow from an upstream end of the heating resistance (4) to an upstream end of the electrical insulation film lying over the cavity and the constant temperature (ΔTh) satisfy the following relationship: ΔTh/Ws≦800 (° C./mm) Thus, a thermal flow sensor is provided which can prevent deposition of floating fine particles, such as carbon particles, caused by the thermophoretic effect, can be fabricated at a low cost, and has high reliability.

摘要翻译： 一种以低成本制造并具有改进的可靠性的热流传感器。 在形成在半导体衬底（2）中的空腔（7）上，在腔的中心附近形成至少一个加热电阻（4），其中电绝缘膜置于加热电阻和空腔之间。 加热电阻（4）的温度（Th）通过恒温（{Th = Th-Ta））控制为高于介质温度（Ta）。 从加热电阻（4）的上游端到位于空腔上的电绝缘膜的上游端和恒温（DeltaTh）的气流方向的距离（Ws）满足以下关系： line-formula description =“In-line Formulas”end =“lead”？> DeltaTh / Ws <= 800（°C / mm）<？in-line-formula description =“In-line Formulas”end =“tail 因此，提供了能够防止由热诱导效应引起的诸如碳颗粒的漂浮微粒的沉积的热流量传感器，可以以低成本制造，并且具有高可靠性。

公开(公告)号：US07181962B2

公开(公告)日：2007-02-27

申请号：US10546174

申请日：2004-05-26

申请人： Masamichi Yamada ,  Izumi Watanabe ,  Keiichi Nakada ,  Junichi Horie

发明人： Masamichi Yamada ,  Izumi Watanabe ,  Keiichi Nakada ,  Junichi Horie

IPC分类号： G01F1/68

CPC分类号： G01F1/6845 ,  G01F1/698

摘要： A thermal flow sensor which is fabricated at a low cost and has improved reliability. Over a cavity (7) formed in a semiconductor substrate (2), at least a heating resistance (4) is formed near the center of the cavity with an electrical insulation film interposed between the heating resistance and the cavity. The temperature (Th) of the heating resistance (4) is controlled to be higher than the medium temperature (Ta) by a constant temperature (ΔTh=Th−Ta). A distance (Ws) in the direction of airflow from an upstream end of the heating resistance (4) to an upstream end of the electrical insulation film lying over the cavity and the constant temperature (ΔTh) satisfy the following relationship: ΔTh/Ws≦800 (° C./mm) Thus, a thermal flow sensor is provided which can prevent deposition of floating fine particles, such as carbon particles, caused by the thermophoretic effect, can be fabricated at a low cost, and has high reliability.

摘要翻译： 一种以低成本制造并具有改进的可靠性的热流传感器。 在形成在半导体衬底（2）中的空腔（7）上，在腔的中心附近形成至少一个加热电阻（4），其中电绝缘膜置于加热电阻和空腔之间。 加热电阻（4）的温度（Th）被控制为高于介质温度（Ta）恒温（DeltaTh = Th-Ta）。 从加热电阻（4）的上游端到位于空腔上的电绝缘膜的上游端和恒温（DeltaTh）的气流方向的距离（Ws）满足以下关系： line-formula description =“In-line Formulas”end =“lead”？> DeltaTh / Ws <= 800（°C./mm)

公开(公告)号：US07104126B2

公开(公告)日：2006-09-12

申请号：US11187823

申请日：2005-07-25

申请人： Izumi Watanabe ,  Junichi Horie ,  Keiichi Nakada ,  Kei Ueyama ,  Masamichi Yamada

发明人： Izumi Watanabe ,  Junichi Horie ,  Keiichi Nakada ,  Kei Ueyama ,  Masamichi Yamada

IPC分类号： G01F1/68

CPC分类号： G01F1/6845 ,  G01F1/6842 ,  G01F1/692 ,  G01F1/698 ,  G01F1/699

摘要： A flow rate sensor has a problem that a resistance value of a heat generating resistor itself varies and sensor characteristics are changed during use of the sensor for a long term. Also, the temperature of the heat generating resistor must be adjusted on a circuit substrate with a resistance constituting one side of a fixed temperature difference control circuit, and this has been one of factors pushing up the production cost. All resistances used for fixed temperature difference control are formed on the same substrate as temperature sensitive resistors of the same material. This enables all the resistances for the fixed temperature difference control to be exposed to the same environmental conditions. Hence, even when the resistances change over time, the changes over time occur substantially at the same tendency. Since the resistances for the fixed temperature difference control change over time essentially at the same rate, a resulting output error is very small.

公开(公告)号：US06923053B2

公开(公告)日：2005-08-02

申请号：US10954270

申请日：2004-10-01

申请人： Masamichi Yamada ,  Junichi Horie ,  Izumi Watanabe ,  Keiichi Nakada

发明人： Masamichi Yamada ,  Junichi Horie ,  Izumi Watanabe ,  Keiichi Nakada

IPC分类号： F02D35/00 ,  G01F1/684 ,  G01F1/692 ,  G01F1/68

CPC分类号： G01F1/692 ,  G01F1/6845 ,  Y10T29/49002 ,  Y10T29/49007 ,  Y10T29/4902

摘要： A gas flowmeter capable of reducing a secular change comprises a silicon semiconductor substrate formed with a cavity and a heat element formed above the cavity of the semiconductor substrate by way of an insulating film. The heat element is a silicon (Si) semiconductor thin film impurity-doped at high concentration. Stoichiometrically stable silicon nitride (Si3N4) thin films as barrier layers which less permeate and less absorb hydrogen in the heat generating temperature range of the heat element are formed above and below the silicon (Si) semiconductor thin film.

摘要翻译： 能够减少长期变化的气体流量计包括形成有空腔的硅半导体衬底和通过绝缘膜形成在半导体衬底的空腔上方的加热元件。 热元件是以高浓度杂质掺杂的硅（Si）半导体薄膜。 在上面形成作为在热元件的发热温度范围内较少渗透并且较少吸收氢的阻挡层的化学计量稳定的氮化硅（Si 3 N 4 N 4）薄膜， 在硅（Si）半导体薄膜之下。

公开(公告)号：US20050050953A1

公开(公告)日：2005-03-10

申请号：US10954270

申请日：2004-10-01

申请人： Masamichi Yamada ,  Junichi Horie ,  Izumi Watanabe ,  Keiichi Nakada

发明人： Masamichi Yamada ,  Junichi Horie ,  Izumi Watanabe ,  Keiichi Nakada

IPC分类号： F02D35/00 ,  G01F1/684 ,  G01F1/692 ,  G01F1/68

CPC分类号： G01F1/692 ,  G01F1/6845 ,  Y10T29/49002 ,  Y10T29/49007 ,  Y10T29/4902

摘要： A gas flowmeter capable of reducing a secular change comprises a silicon semiconductor substrate formed with a cavity and a heat element formed above the cavity of the semiconductor substrate by way of an insulating film. The heat element is a silicon (Si) semiconductor thin film impurity-doped at high concentration. Stoichiometrically stable silicon nitride (Si3N4) thin films as barrier layers which less permeate and less absorb hydrogen in the heat generating temperature range of the heat element are formed above and below the silicon (Si) semiconductor thin film.

摘要翻译： 能够减少长期变化的气体流量计包括形成有空腔的硅半导体衬底和通过绝缘膜形成在半导体衬底的空腔上方的加热元件。 热元件是以高浓度杂质掺杂的硅（Si）半导体薄膜。 在硅（Si）半导体薄膜之上和之下形成作为阻碍层的化学计量稳定的氮化硅（Si 3 N 4）薄膜，该阻挡层在热元件的发热温度范围内渗透较少并吸收较少的氢。

公开(公告)号：US07650784B2

公开(公告)日：2010-01-26

申请号：US12139761

申请日：2008-06-16

申请人： Izumi Watanabe ,  Junichi Horie ,  Keiichi Nakada ,  Kei Ueyama ,  Masamichi Yamada

发明人： Izumi Watanabe ,  Junichi Horie ,  Keiichi Nakada ,  Kei Ueyama ,  Masamichi Yamada

IPC分类号： G01F1/68

CPC分类号： G01F1/6845 ,  G01F1/6842 ,  G01F1/692 ,  G01F1/698 ,  G01F1/699

摘要： A flow rate sensor has a problem that a resistance value of a heat generating resistor itself varies and sensor characteristics are changed during use of the sensor for a long term. Also, the temperature of the heat generating resistor must be adjusted on a circuit substrate with a resistance constituting one side of a fixed temperature difference control circuit, and this has been one of factors pushing up the production cost. All resistances used for fixed temperature difference control are formed on the same substrate as temperature sensitive resistors of the same material. This enables all the resistances for the fixed temperature difference control to be exposed to the same environmental conditions. Hence, even when the resistances change over time, the changes over time occur substantially at the same tendency. Since the resistances for the fixed temperature difference control change over time essentially at the same rate, a resulting output error is very small.

摘要翻译： 流量传感器具有长期使用传感器时发热电阻器本身的电阻值变化，传感器特性变化的问题。 此外，发热电阻器的温度必须在构成固定温度差控制电路的一侧的电阻的电路基板上进行调整，这是提高生产成本的因素之一。 用于固定温差控制的所有电阻都与相同材料的感温电阻器形成在同一基板上。 这使得固定温差控制的所有电阻能够暴露在相同的环境条件下。 因此，即使电阻随着时间的推移而变化，随着时间的推移发生大体上同样的变化。 由于固定温差控制的电阻基本上以相同的速率变化，所以产生的输出误差非常小。

公开(公告)号：US20080250856A1

公开(公告)日：2008-10-16

申请号：US12139761

申请日：2008-06-16

申请人： Izumi WATANABE ,  Junichi Horie ,  Keiichi Nakada ,  Kei Ueyama ,  Masamichi Yamada

发明人： Izumi WATANABE ,  Junichi Horie ,  Keiichi Nakada ,  Kei Ueyama ,  Masamichi Yamada

IPC分类号： G01F1/68

CPC分类号： G01F1/6845 ,  G01F1/6842 ,  G01F1/692 ,  G01F1/698 ,  G01F1/699

摘要： A flow rate sensor has a problem that a resistance value of a heat generating resistor itself varies and sensor characteristics are changed during use of the sensor for a long term. Also, the temperature of the heat generating resistor must be adjusted on a circuit substrate with a resistance constituting one side of a fixed temperature difference control circuit, and this has been one of factors pushing up the production cost. All resistances used for fixed temperature difference control are formed on the same substrate as temperature sensitive resistors of the same material. This enables all the resistances for the fixed temperature difference control to be exposed to the same environmental conditions. Hence, even when the resistances change over time, the changes over time occur substantially at the same tendency. Since the resistances for the fixed temperature difference control change over time essentially at the same rate, a resulting output error is very small.

摘要翻译： 流量传感器具有长期使用传感器时发热电阻器本身的电阻值变化，传感器特性变化的问题。 此外，发热电阻器的温度必须在构成固定温度差控制电路的一侧的电阻的电路基板上进行调整，这是提高生产成本的因素之一。 用于固定温差控制的所有电阻都与相同材料的感温电阻器形成在同一基板上。 这使得固定温差控制的所有电阻能够暴露在相同的环境条件下。 因此，即使电阻随着时间的推移而变化，随着时间的推移发生大体上同样的变化。 由于固定温差控制的电阻基本上以相同的速率变化，所以产生的输出误差非常小。