Soft-film-bias type magnetoresitive device
    5.
    发明授权
    Soft-film-bias type magnetoresitive device 失效
    软膜偏置型磁阻器件

    公开(公告)号:US4814919A

    公开(公告)日:1989-03-21

    申请号:US124623

    申请日:1987-11-24

    IPC分类号: G11B5/39 H01L43/08 G11B5/127

    摘要: A soft-film-bias type magnetoresistive device is disclosed in which a high-permeability magnetic film, an insulating film and a permalloy film are formed on a substrate in this order, and first, second and third electrodes, which are parallel to each other, are provided on the permalloy film, to form a differential type magnetoresistive device. In this magnetoresistive device, a bias magnetic field which is generated and applied to the permalloy film between the first and second electrodes, is opposite in direction to a bias magnetic field which is generated and applied to the permalloy film between the second and third electrodes.

    摘要翻译: 公开了一种软膜偏置型磁阻器件,其中在基板上依次形成高磁导率磁性膜,绝缘膜和坡莫合金膜,并且彼此平行的第一,第二和第三电极 ,设置在坡莫合金膜上,形成差动型磁阻器件。 在该磁阻器件中,产生并施加到第一和第二电极之间的坡莫合金膜上的偏置磁场在与产生并施加到第二和第三电极之间的坡莫合金膜上的偏置磁场方向相反。

    Magnetic transducer using magnetoresistance effect
    6.
    发明授权
    Magnetic transducer using magnetoresistance effect 失效
    磁传感器采用磁阻效应

    公开(公告)号:US4663684A

    公开(公告)日:1987-05-05

    申请号:US694764

    申请日:1985-01-25

    IPC分类号: G01R33/09 G11B5/39 G11B5/30

    摘要: Disclosed is a magnetic transducer using a magnetoresistance effect, comprising a magnetoresistive film, a hard magnetic film for applying a transverse biasing magnetic field thereto, and a conductive film through which current for applying the transverse biasing magnetic field to the magnetoresistive film flows. The conductive film may be either in electrical contact with or in electrical insulation from the magnetoresistive film. In this magnetic transducer, even when the heights of the respective constituents have changed, the transverse biasing magnetic field to be applied does not change considerably, and an optimum bias field strength is readily attained.

    摘要翻译: 公开了一种使用磁阻效应的磁传感器,包括磁阻膜,用于向其施加横向偏置磁场的硬磁膜,以及用于向磁阻膜施加横向偏置磁场的电流的导电膜。 导电膜可以与磁阻膜电接触或者与电绝缘。 在这种磁换能器中,即使各构成部件的高度发生变化,所施加的横向偏置磁场也不会发生显着变化,容易获得最佳的偏置磁场强度。

    Magnetic head closure having ferrite substrate and closure and
conductive thin film coil deposited in recess of substantially same
shape in ferrite substrate
    7.
    发明授权
    Magnetic head closure having ferrite substrate and closure and conductive thin film coil deposited in recess of substantially same shape in ferrite substrate 失效
    具有铁氧体衬底的磁头封盖和在铁氧体衬底中沉积在基本相同形状的凹陷中的闭合和导电薄膜线圈

    公开(公告)号:US4860140A

    公开(公告)日:1989-08-22

    申请号:US183338

    申请日:1988-04-07

    摘要: The magnetic head according to the present invention has a ferrite substrate and closure. The ferrite substrate has formed therein a first recess in which a conductive coil is to be deposited, while the ferrite closure has formed therein a second recess enclosing a portion of the conductive coil that is contributed to at least signal transducing. The end of the second recess is disposed in a position related with the depth of the tranducing gap. Since the first recess in which the conductive coil is deposited has no influence on the magnetic transducing efficiency, it can be much freely formed by photolithography or reactive ion etching. Also since the second recess having an influence on the magnetic transducing efficiency can be formed by precision machining, no advanced process control is needed.

    摘要翻译: 根据本发明的磁头具有铁氧体衬底和封闭件。 铁氧体衬底在其中形成有要沉积导电线圈的第一凹部,而铁氧体封闭件在其中形成有封闭导电线圈的至少有助于至少信号传导的部分的第二凹部。 第二凹部的端部设置在与调节间隙的深度相关的位置。 由于其中沉积导电线圈的第一凹槽对磁转换效率没有影响,所以可以通过光刻或反应离子蚀刻来自由地形成。 此外,由于可以通过精密加工形成对磁转换效率有影响的第二凹部,因此不需要先进的工艺控制。

    Magnetoresistance type magnetic head and method for fabricating same
    8.
    发明授权
    Magnetoresistance type magnetic head and method for fabricating same 失效
    磁阻型磁头及其制造方法

    公开(公告)号:US4807073A

    公开(公告)日:1989-02-21

    申请号:US40127

    申请日:1987-04-20

    IPC分类号: G11B5/39 G11B5/12 G11B5/30

    CPC分类号: G11B5/3903

    摘要: A magnetoresistance type magnetic head, in which a magnetoresistance film is disposed through an insulating film between two soft magnetic bodies, and a signal leadout conductor for the magnetoresistance film is disposed in the insulating film so that its surface is at the same level as that of the insulating film, thereby providing a high-performance magnetoresistance type magnetic head, in which the gap length is small and the resistance of the signal leadout conductor portion is small.

    摘要翻译: 通过两个软磁体之间的绝缘膜设置磁阻膜的磁阻型磁头和用于磁阻膜的信号引出导体设置在绝缘膜中,使得其表面处于与 从而提供间隙长度小并且信号引出导体部分的电阻小的高性能磁阻型磁头。

    Magnetoresistive head structure that prevents under film from
undesirable etching
    9.
    发明授权
    Magnetoresistive head structure that prevents under film from undesirable etching 失效
    防止膜下不希望腐蚀的磁阻头结构

    公开(公告)号:US5371643A

    公开(公告)日:1994-12-06

    申请号:US927955

    申请日:1992-08-11

    IPC分类号: G11B5/39 G11B5/33

    CPC分类号: G11B5/3903 Y10T29/49052

    摘要: A magnetoresistive head is fabricated with a high yield rate by preventing the electrode film from breaking down. An upper shield film is formed with an electrode separation layer and an upper gap film disposed between it and the electrode film. The electrode film is prevented from being etched when the upper shield film is subjected to ion milling as a result. Further, the upper gap film is laid on top of the electrode separation layer, and a lead is satisfactorily protected and prevented from being exposed. Thus, the upper shield film and the lead are prevented from becoming short-circuited as a result of the disconnection of the electrode film and the exposure of the lead.

    摘要翻译: 通过防止电极膜破裂,以高产率制造磁阻头。 上部屏蔽膜形成有电极分离层和设置在其与电极膜之间的上间隙膜。 因此,当上屏蔽膜经受离子铣削时,防止电极膜被蚀刻。 此外,上间隙膜被放置在电极分离层的顶部,并且引线被令人满意地保护并防止暴露。 因此,由于电极膜的断开和引线的暴露,防止了上屏蔽膜和引线的短路。

    Magnetoresistive head
    10.
    发明授权
    Magnetoresistive head 失效
    磁阻头

    公开(公告)号:US5212609A

    公开(公告)日:1993-05-18

    申请号:US792630

    申请日:1991-11-15

    IPC分类号: G11B5/39

    CPC分类号: G11B5/3903 Y10T29/49052

    摘要: A magnetoresistive head is disclosed. It comprises a lower gap film, a magnetoresistive film, a bias film, an electrode, an upper gap film, and upper shield film provided in sequence on a substrate. A protective film is provided under the upper shield film to prevent the upper gap film and electrode from the undesirable etching during patterning the upper shield film.

    摘要翻译: 公开了一种磁阻头。 它包括依次设置在基板上的下间隙膜,磁阻膜,偏置膜,电极,上间隙膜和上屏蔽膜。 在上屏蔽膜下方设置有保护膜,以防止在上屏蔽膜图案化期间上间隙膜和电极不期望的蚀刻。