公开(公告)号：US4069009A

公开(公告)日：1978-01-17

申请号：US730720

申请日：1976-10-08

申请人： Masao Yamawaki ,  Katsuo Aoki ,  Yoshio Oka ,  Takao Suzuki ,  Osamu Ina ,  Kinihiko Hara

发明人： Masao Yamawaki ,  Katsuo Aoki ,  Yoshio Oka ,  Takao Suzuki ,  Osamu Ina ,  Kinihiko Hara

IPC分类号： B65G35/00 ,  H01L21/50 ,  H01L21/677 ,  F27B9/14

CPC分类号： H01L21/67712 ,  B65G35/00 ,  H01L21/6773

摘要： An apparatus for automatically transferring semiconductor wafers is disclosed. Semiconductor wafers are loaded on a boat which is placed on a pair of first supporting bars. A pair of second supporting bars are driven by a motor to repeat circular motion between the first supporting bars. The second supporting bars, circularly moving in parallel with the first supporting bars, forwardly transfer the boat. The boat is kept uplifted over the first supporting bars during the forward transfer thereof. Repetition of the circular motion of the second supporting bars makes the automatic transfer of the semiconductor wafers to be heat-treated in a semiconductor manufacturing system.

摘要翻译： 公开了一种用于自动转移半导体晶片的设备。 将半导体晶片装载在放置在一对第一支撑杆上的船上。 一对第二支撑杆由马达驱动以在第一支撑杆之间重复圆周运动。 与第一支撑杆平行移动的第二支撑杆向前移动船。 在向前转移期间，船在第一支撑杆上保持隆起。 第二支撑杆的圆周运动的重复使半导体制造系统中半导体晶片的自动转印被热处理。

公开(公告)号：US4075972A

公开(公告)日：1978-02-28

申请号：US714806

申请日：1976-08-16

申请人： Masao Yamawaki ,  Katsuo Aoki ,  Osamu Ina ,  Takao Suzuki ,  Yoshio Oka ,  Kunihiko Hara

发明人： Masao Yamawaki ,  Katsuo Aoki ,  Osamu Ina ,  Takao Suzuki ,  Yoshio Oka ,  Kunihiko Hara

IPC分类号： C30B31/06 ,  C30B31/10 ,  C23C13/12

CPC分类号： C30B31/06 ,  C30B31/106 ,  Y10S414/14

摘要： The invention discloses an apparatus for thermal diffusion of semiconductor devices, wherein a plurality of wafer boats each made of a refractory material and adapted to carry a predetermined number of wafers to be processed are sequentially fed into a furnace tube containing a high temperature, diffusion gas atmosphere and continuously transported at a predetermined speed through the furnace tube so that each wafer may have substantially the same thermal treatment and high productivity may be attained.

摘要翻译： 本发明公开了一种用于半导体器件的热扩散的装置，其中由耐火材料制成并适于承载预定数量待处理的晶片的多个晶片舟片依次送入含有高温扩散气体 通过炉管以预定速度连续输送，使得每个晶片可以具有基本上相同的热处理，并且可以获得高生产率。

公开(公告)号：US4096822A

公开(公告)日：1978-06-27

申请号：US727772

申请日：1976-09-29

申请人： Masao Yamawaki ,  Katsuo Aoki ,  Yoshio Oka ,  Takao Suzuki ,  Osamu Ina ,  Kunihiko Hara

发明人： Masao Yamawaki ,  Katsuo Aoki ,  Yoshio Oka ,  Takao Suzuki ,  Osamu Ina ,  Kunihiko Hara

IPC分类号： H01L21/31 ,  C23C16/44 ,  C23C16/455 ,  C30B31/16 ,  H01L21/22 ,  C23C11/00

CPC分类号： C30B31/16 ,  C23C16/455 ,  C23C16/45578

摘要： A gaseous atmosphere control apparatus for heat-treating semiconductors in a uniform gaseous atmosphere condition is disclosed. The control apparatus is provided with a reaction pipe through which semiconductor wafers are transferred to be heat-treated. A gas distribution pipe is fixed to the inside wall of the reaction pipe for guiding the transfer of the wafers and supplying heat-treating gas in the reaction pipe. The distribution pipe is provided with a plurality of blow-off holes, the diameter thereof being made wider as the pipe extends longitudinally, to thereby control the gaseous atmosphere condition in the reaction pipe to be uniform.

摘要翻译： 公开了一种用于均匀气氛条件下热处理半导体的气体气氛控制装置。 控制装置设置有反应管，半导体晶片通过该反应管被转印以进行热处理。 气体分配管固定到反应管的内壁，用于引导晶片的转移并在反应管中供应热处理气体。 分配管设置有多个排气孔，其管道纵向延伸时，其直径变宽，从而控制反应管中的气态气体状态均匀。

公开(公告)号：US4147432A

公开(公告)日：1979-04-03

申请号：US744049

申请日：1976-11-22

申请人： Masao Yamawaki ,  Katsuo Aoki ,  Yoshio Oka ,  Takao Suzuki ,  Masahiko Amano ,  Hideki Ozaki ,  Osamu Ishihara

发明人： Masao Yamawaki ,  Katsuo Aoki ,  Yoshio Oka ,  Takao Suzuki ,  Masahiko Amano ,  Hideki Ozaki ,  Osamu Ishihara

IPC分类号： C30B31/06 ,  B65G49/07 ,  C30B31/10 ,  C30B31/12 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/677 ,  C23C13/08

CPC分类号： H01L21/67103 ,  C30B31/106 ,  C30B31/12 ,  Y10S414/135

摘要： This invention relates to an apparatus for thermal diffusion by means of high frequency induction heating suitable for mass production of semiconductor substrates of uniform quality; wherein a plurality of heating bases, each made of a material having good electric conductivity, and carrying semiconductor substrates, are continuously fed through a furnace tube where the bases are heated by means of high frequency wave excitation in order that each semiconductor substrate receives substantially the same thermal treatment.

摘要翻译： 本发明涉及一种适用于批量生产质量均匀的半导体衬底的高频感应加热热扩散装置。 其中，由导电性良好的材料构成的多个加热基底和载持半导体基板的加热基板通过高频波激励而被加热的炉管连续供给，以使得每个半导体基板基本上接收 同样的热处理。

公开(公告)号：US4789494A

公开(公告)日：1988-12-06

申请号：US5390

申请日：1987-01-09

申请人： Katsuo Aoki ,  Toshio Ueda

发明人： Katsuo Aoki ,  Toshio Ueda

IPC分类号： C01G49/00 ,  C01G51/00 ,  C01G53/00 ,  G11B5/706 ,  H01F1/10 ,  H01F1/11 ,  C04B35/26 ,  C01G49/06 ,  C01G49/08

CPC分类号： H01F1/11 ,  C01G49/0018 ,  C01G49/0036 ,  C01G49/0063 ,  C01G49/0072 ,  C01G49/009 ,  C01G51/006 ,  C01G53/006 ,  G11B5/70678 ,  C01P2002/52 ,  C01P2004/20 ,  C01P2004/54 ,  C01P2004/62 ,  C01P2006/12 ,  C01P2006/42

摘要： There is disclosed in hydrothermal process for producing a magnetoplumbitic ferrite powder of the formula:MO.n(Fe.sub.2-x M'.sub.x O.sub.3) (1)wherein M is one or more metals selected from the group consisting of Ba, Sr, Ca and Pb; n is a number of 3 to 6; M' is at least one component selected from the group consisting of Si, Ta, Sb, Nb, Zr and Ti, or a combination of that component with at least one other component selected from the group consisting of Ni, Co, Cu, Mg, Mn and Zn; x is a number of 0.01 to 0.7, which process comprises carrying out the reaction of said ferrite powder formation in a H.sub.2 O medium at a temperature higher than 100.degree. C. and in the presence of an alkali having an alkali equivalent ratio greater than 1.0 with respect to an acid residue or in the presence of an alkali that provides the reaction system with a pH of 11 or more, said reaction being caused to proceed in the presence of "agent A" or in the present of both "agent A" and "agent B".

摘要翻译： 公开了用于生产下式的磁铅矿铁氧体粉末的水热法制备：Mn.Fe（Fe2-xM'xO3）（1）其中M是一种或多种选自Ba，Sr，Ca和Pb的金属; n是3到6的数; M'是选自由Si，Ta，Sb，Nb，Zr和Ti组成的组中的至少一种组分，或该组分与至少一种选自Ni，Co，Cu，Mg ，Mn和Zn; x是0.01〜0.7的数，该方法包括在高于100℃的温度和碱当量比大于1.0的碱的存在下，在H 2 O介质中进行所述铁素体粉末形成的反应， 相对于酸残基或在提供反应体系的pH为11以上的碱存在下，所述反应在“试剂A”或“试剂A”和“试剂A”和“试剂A”存在下进行 “代理B”。