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公开(公告)号：US20090263950A1
公开(公告)日：2009-10-22
申请号：US12491984
申请日：2009-06-25
IPC分类号： H01L21/336
CPC分类号： H01L27/092 , H01L21/28097 , H01L21/823842 , H01L21/823857 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/7833
摘要： A semiconductor device includes: a p-channel MIS transistor including: a first insulating layer formed on a semiconductor region between a source region and a drain region, and containing at least silicon and oxygen; a second insulating layer formed on the first insulating layer, and containing hafnium, silicon, oxygen, and nitrogen, and a first gate electrode formed on the second insulating layer. The first and second insulating layers have a first and second region respectively. The first and second regions are in a 0.3 nm range in the film thickness direction from an interface between the first insulating layer and the second insulating layer. Each of the first and second regions include aluminum atoms with a concentration of 1×1020 cm−3 or more to 1×1022 cm−3 or less.
摘要翻译： 半导体器件包括：p沟道MIS晶体管，包括：第一绝缘层，形成在源极区域和漏极区域之间的半导体区域上，并且至少包含硅和氧; 形成在所述第一绝缘层上并且包含铪，硅，氧和氮的第二绝缘层，以及形成在所述第二绝缘层上的第一栅电极。 第一和第二绝缘层分别具有第一和第二区域。 第一和第二区域在从第一绝缘层和第二绝缘层之间的界面的膜厚度方向上为0.3nm的范围内。 第一和第二区域中的每一个包括浓度为1×10 20 cm -3或更高至1×10 22 cm -3或更小的铝原子。
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公开(公告)号：US07964489B2
公开(公告)日：2011-06-21
申请号：US12491984
申请日：2009-06-25
IPC分类号： H01L21/3205
CPC分类号： H01L27/092 , H01L21/28097 , H01L21/823842 , H01L21/823857 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/7833
摘要： A semiconductor device includes: a p-channel MIS transistor including: a first insulating layer formed on a semiconductor region between a source region and a drain region, and containing at least silicon and oxygen; a second insulating layer formed on the first insulating layer, and containing hafnium, silicon, oxygen, and nitrogen, and a first gate electrode formed on the second insulating layer. The first and second insulating layers have a first and second region respectively. The first and second regions are in a 0.3 nm range in the film thickness direction from an interface between the first insulating layer and the second insulating layer. Each of the first and second regions include aluminum atoms with a concentration of 1×1020 cm−3 or more to 1×1022 cm−3 or less.
摘要翻译： 半导体器件包括：p沟道MIS晶体管，包括：第一绝缘层，形成在源极区域和漏极区域之间的半导体区域上，并且至少包含硅和氧; 形成在所述第一绝缘层上并且包含铪，硅，氧和氮的第二绝缘层，以及形成在所述第二绝缘层上的第一栅电极。 第一和第二绝缘层分别具有第一和第二区域。 第一和第二区域在从第一绝缘层和第二绝缘层之间的界面的膜厚度方向上为0.3nm的范围内。 第一和第二区域中的每一个包括浓度为1×1020cm-3或更高至1×1022cm-3或更低的铝原子。
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公开(公告)号：US07807990B2
公开(公告)日：2010-10-05
申请号：US11753186
申请日：2007-05-24
IPC分类号： H01L31/00
CPC分类号： H01L27/092 , H01L21/28097 , H01L21/823842 , H01L21/823857 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/7833
摘要： A semiconductor device includes: a p-channel MIS transistor including: a first insulating layer formed on a semiconductor region between a source region and a drain region, and containing at least silicon and oxygen; a second insulating layer formed on the first insulating layer, and containing hafnium, silicon, oxygen, and nitrogen, and a first gate electrode formed on the second insulating layer. The first and second insulating layers have a first and second region respectively. The first and second regions are in a 0.3 nm range in the film thickness direction from an interface between the first insulating layer and the second insulating layer. Each of the first and second regions include aluminum atoms with a concentration of 1×1020 cm−3 or more to 1×1022 cm−3 or less.
摘要翻译： 半导体器件包括：p沟道MIS晶体管，包括：第一绝缘层，形成在源极区域和漏极区域之间的半导体区域上，并且至少包含硅和氧; 形成在所述第一绝缘层上并且包含铪，硅，氧和氮的第二绝缘层，以及形成在所述第二绝缘层上的第一栅电极。 第一和第二绝缘层分别具有第一和第二区域。 第一和第二区域在从第一绝缘层和第二绝缘层之间的界面的膜厚度方向上为0.3nm的范围内。 第一和第二区域中的每一个包括浓度为1×1020cm-3或更高至1×1022cm-3或更低的铝原子。
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公开(公告)号：US20080128822A1
公开(公告)日：2008-06-05
申请号：US11753186
申请日：2007-05-24
IPC分类号： H01L27/092
CPC分类号： H01L27/092 , H01L21/28097 , H01L21/823842 , H01L21/823857 , H01L29/4975 , H01L29/513 , H01L29/517 , H01L29/7833
摘要： A semiconductor device includes: a p-channel MIS transistor including: a first insulating layer formed on a semiconductor region between a source region and a drain region, and containing at least silicon and oxygen; a second insulating layer formed on the first insulating layer, and containing hafnium, silicon, oxygen, and nitrogen, and a first gate electrode formed on the second insulating layer. The first and second insulating layers have a first and second region respectively. The first and second regions are in a 0.3 nm range in the film thickness direction from an interface between the first insulating layer and the second insulating layer. Each of the first and second regions include aluminum atoms with a concentration of 1×1020 cm−3 or more to 1×1022 cm−3 or less.
摘要翻译： 半导体器件包括：p沟道MIS晶体管，包括：第一绝缘层，形成在源极区域和漏极区域之间的半导体区域上，并且至少包含硅和氧; 形成在所述第一绝缘层上并且包含铪，硅，氧和氮的第二绝缘层，以及形成在所述第二绝缘层上的第一栅电极。 第一和第二绝缘层分别具有第一和第二区域。 第一和第二区域在从第一绝缘层和第二绝缘层之间的界面的膜厚度方向上为0.3nm的范围内。 第一和第二区域中的每一个包括浓度为1×10 20 cm -3或更多至1×10 22 cm -3的铝原子， 3 以下。
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5.发明授权Method of making p-channel and n-channel MIS transistors using single film formation of TaC 有权使用TaC单膜形成制造p沟道和n沟道MIS晶体管的方法公开(公告)号：US07745888B2
公开(公告)日：2010-06-29
申请号：US12232078
申请日：2008-09-10
IPC分类号： H01L29/76
CPC分类号： H01L21/823842
摘要： A semiconductor device includes a substrate, a p-channel MIS transistor formed on an n-type well on the substrate, having a first gate dielectric and a first gate electrode formed thereon and formed of a Ta—C alloy wherein a crystal orientation ratio of a TaC (111) face in a film thickness direction [TaC (111) face/{TaC (111) face+TaC (200) face}] is 80% or more, and an n-channel MIS transistor formed on a p-type well on the substrate, having a second gate dielectric and a second gate electrode formed thereon and formed of a Ta—C alloy wherein a crystal orientation ratio of a TaC (111) face in a film thickness direction [TaC (111) face/{TaC (111) face+TaC (200) face}] is 60% or less.
摘要翻译： 半导体器件包括衬底，形成在衬底上的n型阱上的p沟道MIS晶体管，具有形成在其上并由Ta-C合金形成的第一栅极电介质和第一栅电极，其中晶体取向比例 膜厚方向[TaC（111）面/ {TaC（111）面+ TaC（200）面}]的TaC（111）面为80％以上，n型沟道MIS晶体管形成在p- 在基板上良好地形成具有形成在其上的第二栅极电介质和第二栅电极，并且由TaC（111）在膜厚度方向[TaC（111）面/ {TaC（111）面+ TaC（200）面}]为60％以下。
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公开(公告)号：US07612413B2
公开(公告)日：2009-11-03
申请号：US11461646
申请日：2006-08-01
IPC分类号： H01L27/092
CPC分类号： H01L21/823842 , H01L21/823835
摘要： A semiconductor device includes a substrate, a p-channel MIS transistor formed on the substrate, the p-channel MIS transistor having a first gate electrode, and an n-channel MIS transistor formed on the substrate separately from the p-channel MIS transistor, the n-channel MIS transistor having a second gate electrode. Each of the first gate electrode and the second gate electrode is formed of an alloy of Ta and C in which a mole ratio of C to Ta (C/Ta) is from 2 to 4.
摘要翻译： 半导体器件包括衬底，形成在衬底上的p沟道MIS晶体管，具有第一栅电极的p沟道MIS晶体管和与p沟道MIS晶体管分开形成在衬底上的n沟道MIS晶体管， 该n沟道MIS晶体管具有第二栅电极。 第一栅极电极和第二栅极电极由Ta和C的合金形成，其中C与Ta（C / Ta）的摩尔比为2〜4。
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公开(公告)号：US20070145488A1
公开(公告)日：2007-06-28
申请号：US11461646
申请日：2006-08-01
IPC分类号： H01L29/94
CPC分类号： H01L21/823842 , H01L21/823835
摘要： A semiconductor device includes a substrate, a p-channel MIS transistor formed on the substrate, the p-channel MIS transistor having a first gate electrode, and an n-channel MIS transistor formed on the substrate separately from the p-channel MIS transistor, the n-channel MIS transistor having a second gate electrode. Each of the first gate electrode and the second gate electrode is formed of an alloy of Ta and C in which a mole ratio of C to Ta (C/Ta) is from 2 to 4.
摘要翻译： 半导体器件包括衬底，形成在衬底上的p沟道MIS晶体管，具有第一栅电极的p沟道MIS晶体管和与p沟道MIS晶体管分开形成在衬底上的n沟道MIS晶体管， 该n沟道MIS晶体管具有第二栅电极。 第一栅极电极和第二栅极电极由Ta和C的合金形成，其中C与Ta（C / Ta）的摩尔比为2〜4。
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公开(公告)号：US07728394B2
公开(公告)日：2010-06-01
申请号：US12232079
申请日：2008-09-10
IPC分类号： H00L29/79
CPC分类号： H01L21/823842
摘要： A semiconductor device includes a substrate, a p-channel MIS transistor formed on an n-type well on the substrate, having a first gate dielectric and a first gate electrode formed thereon and formed of a Ta—C alloy wherein a crystal orientation ratio of a TaC (111) face in a film thickness direction [TaC (111) face/{TaC (111) face+TaC (200) face}] is 80% or more, and an n-channel MIS transistor formed on a p-type well on the substrate, having a second gate dielectric and a second gate electrode formed thereon and formed of a Ta—C alloy wherein a crystal orientation ratio of a TaC (111) face in a film thickness direction [TaC (111) face/{TaC (111) face+TaC (200) face}] is 60% or less.
摘要翻译： 半导体器件包括衬底，形成在衬底上的n型阱上的p沟道MIS晶体管，具有形成在其上并由Ta-C合金形成的第一栅极电介质和第一栅电极，其中晶体取向比例 膜厚方向[TaC（111）面/ {TaC（111）面+ TaC（200）面}]的TaC（111）面为80％以上，n型沟道MIS晶体管形成在p- 在基板上良好地形成具有形成在其上的第二栅极电介质和第二栅电极，并且由TaC（111）在膜厚度方向[TaC（111）面/ {TaC（111）面+ TaC（200）面}]为60％以下。
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9.发明授权Method of forming TaC gate electrodes with crystal orientation ratio defining the work function 有权形成具有定义功函数的晶体取向比的TaC栅电极的方法公开(公告)号：US07632728B2
公开(公告)日：2009-12-15
申请号：US12232080
申请日：2008-09-10
IPC分类号： H01L29/78 , H01L29/04 , H01L21/8234 , H01L21/8238
CPC分类号： H01L21/823842
摘要： A semiconductor device includes a substrate, a p-channel MIS transistor formed on an n-type well on the substrate, having a first gate dielectric and a first gate electrode formed thereon and formed of a Ta—C alloy wherein a crystal orientation ratio of a TaC (111) face in a film thickness direction [TaC (111) face/{TaC (111) face+TaC (200) face}] is 80% or more, and an n-channel MIS transistor formed on a p-type well on the substrate, having a second gate dielectric and a second gate electrode formed thereon and formed of a Ta—C alloy wherein a crystal orientation ratio of a TaC (111) face in a film thickness direction [TaC (111) face/{TaC (111) face+TaC (200) face}] is 60% or less.
摘要翻译： 半导体器件包括衬底，形成在衬底上的n型阱上的p沟道MIS晶体管，具有形成在其上并由Ta-C合金形成的第一栅极电介质和第一栅电极，其中晶体取向比例 膜厚方向[TaC（111）面/ {TaC（111）面+ TaC（200）面}]的TaC（111）面为80％以上，n型沟道MIS晶体管形成在p- 在基板上良好地形成具有形成在其上的第二栅极电介质和第二栅电极，并且由TaC（111）在膜厚度方向[TaC（111）面/ {TaC（111）面+ TaC（200）面}]为60％以下。
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公开(公告)号：US20090075464A1
公开(公告)日：2009-03-19
申请号：US12232080
申请日：2008-09-10
IPC分类号： H01L21/28
CPC分类号： H01L21/823842
摘要： A semiconductor device includes a substrate, a p-channel MIS transistor formed on an n-type well on the substrate, having a first gate dielectric and a first gate electrode formed thereon and formed of a Ta—C alloy wherein a crystal orientation ratio of a TaC (111) face in a film thickness direction [TaC (111) face/{TaC (111) face+TaC (200) face}] is 80% or more, and an n-channel MIS transistor formed on a p-type well on the substrate, having a second gate dielectric and a second gate electrode formed thereon and formed of a Ta—C alloy wherein a crystal orientation ratio of a TaC (111) face in a film thickness direction [TaC (111) face/{TaC (111) face+TaC (200) face}] is 60% or less.
摘要翻译： 半导体器件包括衬底，形成在衬底上的n型阱上的p沟道MIS晶体管，具有形成在其上并由Ta-C合金形成的第一栅极电介质和第一栅电极，其中晶体取向比例 膜厚方向[TaC（111）面/ {TaC（111）面+ TaC（200）面}]的TaC（111）面为80％以上，n型沟道MIS晶体管形成在p- 在基板上良好地形成具有形成在其上的第二栅极电介质和第二栅电极，并且由TaC（111）在膜厚度方向[TaC（111）面/ {TaC（111）面+ TaC（200）面}]为60％以下。
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