公开(公告)号：US08084331B2

公开(公告)日：2011-12-27

申请号：US12865032

申请日：2009-03-02

申请人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

发明人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

IPC分类号： H01L21/331

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78633

摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

摘要翻译： 在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。 半导体中间隙状态的面密度为1013cm-2eV-1或更小。 带隙可以是2eV或更大。 半导体可以包括选自In，Ga，Zn和Sn中的至少一种。 半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。 光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

公开(公告)号：US20110092016A1

公开(公告)日：2011-04-21

申请号：US12865032

申请日：2009-03-02

申请人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

发明人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

IPC分类号： H01L21/26 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78633

摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

摘要翻译： 在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。 半导体中间隙状态的面密度为1013cm-2eV-1或更小。 带隙可以是2eV或更大。 半导体可以包括选自In，Ga，Zn和Sn中的至少一种。 半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。 光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

公开(公告)号：US20110062441A1

公开(公告)日：2011-03-17

申请号：US12992071

申请日：2009-05-11

申请人： Hisato Yabuta ,  Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

发明人： Hisato Yabuta ,  Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

IPC分类号： H01L33/08 ,  H01L33/16 ,  H01L33/26

CPC分类号： H01L29/78645 ,  H01L29/78633

摘要： Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.

摘要翻译： 提供一种半导体器件，其包括至少包含半导体作为元件的半导体元件，其特征在于包括：用于使波长比半导体的吸收边缘波长长的光照射半导体的机构; 以及调光机构，其设置在光通过的光路的一部分中，用于调节从强度，照射时间和光的波长选择的至少一个因素，其中半导体元件的阈值电压被改变 光由调光机构调节。

公开(公告)号：US08530246B2

公开(公告)日：2013-09-10

申请号：US12992073

申请日：2009-05-11

申请人： Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

发明人： Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L21/331 ,  G01R31/26

CPC分类号： H01L29/7869 ,  H01L29/66969

摘要： A method for controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component is characterized in including a process to measure one of a threshold voltage and a characteristic value serving as an index for the threshold voltage; a process to determine one of the irradiation intensity, irradiation time, and wavelength of the light for irradiating the semiconductor based on one of the measured threshold voltage and the measured characteristic value serving as the index for the threshold voltage; and a process to irradiate light whose one of the irradiation intensity, irradiation time, and wavelength has been determined onto the semiconductor; wherein the light irradiating the semiconductor is a light having a longer wavelength than the wavelength of the absorption edge of the semiconductor, and the threshold voltage is changed by the irradiation of the light.

摘要翻译： 用于控制具有至少半导体作为分量的半导体元件的阈值电压的方法的特征在于包括测量作为阈值电压的指标的阈值电压和特征值之一的处理; 基于所测量的阈值电压和作为阈值电压的指标的测量特征值之一来确定用于照射半导体的光的照射强度，照射时间和波长之一的处理; 以及将照射强度，照射时间和波长中的一个已经确定到半导体上的光照射的过程; 其中照射半导体的光是比半导体的吸收边缘的波长长的波长的光，并且通过光的照射来改变阈值电压。

公开(公告)号：US08513662B2

公开(公告)日：2013-08-20

申请号：US12992071

申请日：2009-05-11

申请人： Hisato Yabuta ,  Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

发明人： Hisato Yabuta ,  Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

IPC分类号： H01L29/72

CPC分类号： H01L29/78645 ,  H01L29/78633

摘要： Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.

摘要翻译： 提供一种半导体器件，其包括至少包含半导体作为元件的半导体元件，其特征在于包括：用于使波长比半导体的吸收边缘波长长的光照射半导体的机构; 以及调光机构，其设置在光通过的光路的一部分中，用于调节从强度，照射时间和光的波长选择的至少一个因素，其中半导体元件的阈值电压被改变 光由调光机构调节。

公开(公告)号：US08216879B2

公开(公告)日：2012-07-10

申请号：US12992070

申请日：2009-05-07

申请人： Nobuyuki Kaji ,  Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

发明人： Nobuyuki Kaji ,  Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L21/66 ,  G01R31/26

CPC分类号： H01L29/7869 ,  H01L22/14 ,  H01L29/66969

摘要： A method for manufacturing a semiconductor device or apparatus having at least a semiconductor as a component, characterized by including irradiating the semiconductor with light having a longer wavelength than the absorption edge wavelength of the semiconductor to change the threshold voltage of the semiconductor device or apparatus, and checking the threshold voltage of the semiconductor device or apparatus, after or during irradiation with the light, to determine whether the threshold voltage is in a predetermined range, during manufacturing the semiconductor device or apparatus.

摘要翻译： 一种半导体器件或装置的制造方法，其至少具有半导体作为部件，其特征在于，包括用比所述半导体的吸收边缘波长长的波长的光照射所述半导体，以改变所述半导体器件或装置的阈值电压， 以及在制造所述半导体器件或装置期间，在所述光照射之后或期间，检查所述半导体器件或装置的阈值电压，以确定所述阈值电压是否在预定范围内。

公开(公告)号：US20110076790A1

公开(公告)日：2011-03-31

申请号：US12992073

申请日：2009-05-11

申请人： Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

发明人： Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

IPC分类号： H01L21/66

CPC分类号： H01L29/7869 ,  H01L29/66969

摘要： A method for controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component is characterized in including a process to measure one of a threshold voltage and a characteristic value serving as an index for the threshold voltage; a process to determine one of the irradiation intensity, irradiation time, and wavelength of the light for irradiating the semiconductor based on one of the measured threshold voltage and the measured characteristic value serving as the index for the threshold voltage; and a process to irradiate light whose one of the irradiation intensity, irradiation time, and wavelength has been determined onto the semiconductor; wherein the light irradiating the semiconductor is a light having a longer wavelength than the wavelength of the absorption edge of the semiconductor, and the threshold voltage is changed by the irradiation of the light.

摘要翻译： 用于控制具有至少半导体作为分量的半导体元件的阈值电压的方法的特征在于包括测量作为阈值电压的指标的阈值电压和特征值之一的处理; 基于所测量的阈值电压和作为阈值电压的指标的测量特征值之一来确定用于照射半导体的光的照射强度，照射时间和波长之一的处理; 以及将照射强度，照射时间和波长中的一个已经确定到半导体上的光照射的过程; 其中照射半导体的光是比半导体的吸收边缘的波长长的波长的光，并且通过光的照射来改变阈值电压。

公开(公告)号：US20110065216A1

公开(公告)日：2011-03-17

申请号：US12992070

申请日：2009-05-07

申请人： Nobuyuki Kaji ,  Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

发明人： Nobuyuki Kaji ,  Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

IPC分类号： H01L21/66 ,  G21G5/00

CPC分类号： H01L29/7869 ,  H01L22/14 ,  H01L29/66969

摘要： A method for manufacturing a semiconductor device or apparatus having at least a semiconductor as a component, characterized by including irradiating the semiconductor with light having a longer wavelength than the absorption edge wavelength of the semiconductor to change the threshold voltage of the semiconductor device or apparatus, and checking the threshold voltage of the semiconductor device or apparatus, after or during irradiation with the light, to determine whether the threshold voltage is in a predetermined range, during manufacturing the semiconductor device or apparatus.

摘要翻译： 一种半导体器件或装置的制造方法，其至少具有半导体作为部件，其特征在于，包括用比所述半导体的吸收边缘波长长的波长的光照射所述半导体，以改变所述半导体器件或装置的阈值电压， 以及在制造所述半导体器件或装置期间，在所述光照射之后或期间，检查所述半导体器件或装置的阈值电压，以确定所述阈值电压是否在预定范围内。

公开(公告)号：US20100221030A1

公开(公告)日：2010-09-02

申请号：US10559532

申请日：2004-06-10

申请人： Takehiko Kawasaki ,  Norio Kaneko ,  Naoaki Maruyama

发明人： Takehiko Kawasaki ,  Norio Kaneko ,  Naoaki Maruyama

IPC分类号： G03G15/20 ,  G01N3/42

CPC分类号： G03G15/5029 ,  G01N3/42 ,  G01N29/045 ,  G01N33/34 ,  G01N2203/0051 ,  G01N2203/0212 ,  G01N2203/0282 ,  G01N2203/0623 ,  G01N2291/0237 ,  G01N2291/02845 ,  G03G2215/00776

摘要： To provide a sheet material identifying apparatus for identifying the kind of a sheet material, including an adjusting assembly for dehumidifying or humidifying a predetermined region of the sheet material and adjusting the moisture content of the predetermined region, external force applying means for applying an external force to the predetermined region of the sheet material whose moisture content is adjusted and detecting means for detecting an external force propagated through the sheet while the external force is applied by the external force applying means; wherein an external force is applied to the predetermined region whose moisture content is adjusted through the adjusting assembly by the external force applying means and the kind of a sheet material is identified in accordance with the external force propagated through the sheet detected by the detecting means.

摘要翻译： 为了提供用于识别片材的种类的片材识别装置，包括用于对片材的预定区域进行除湿或加湿并调节预定区域的含水量的调节组件，外力施加装置，用于施加外力 到达水分含量调节的片材的预定区域;以及检测装置，用于在由外力施加装置施加外力的同时检测通过片材传播的外力; 其中外力施加到通过外力施加装置通过调节组件调节其含水量的预定区域，并且根据由检测装置检测到的通过片材传播的外力来识别片材的种类。

公开(公告)号：US20080251997A1

公开(公告)日：2008-10-16

申请号：US11845218

申请日：2007-08-27

申请人： Takehiko Kawasaki ,  Norio Kaneko ,  Kimio Handa ,  Naoaki Maruyama

发明人： Takehiko Kawasaki ,  Norio Kaneko ,  Kimio Handa ,  Naoaki Maruyama

IPC分类号： B65H7/02

CPC分类号： B65H5/38 ,  B65H7/02 ,  B65H2220/02 ,  B65H2511/20 ,  B65H2511/40 ,  B65H2515/30 ,  B65H2515/50 ,  B65H2551/20 ,  B65H2553/26 ,  B65H2557/64 ,  B65H2220/03 ,  B65H2220/01

摘要： Disclosed is an information detecting device capable of reducing fluctuation in detection accuracy. A recording sheet P transported through a transport path comes into contact with a displacing member, and, in this state, a motor is driven to rotate a cam, and the resilient force of a coil spring causes a pressurizing member to collide with the recording sheet P. The impact force at that time is detected by a detection sensor, and transmitted to a sheet material information obtaining means. Then, on the basis of the detection result, it is possible to detect the type, density, thickness, surface irregularities, etc. of the recording sheet P. At this time, the recording sheet P is in contact with the displacing member, whereby it is possible to reduce fluctuation in detection accuracy due to positional deviation of the recording sheet P.

摘要翻译： 公开了能够降低检测精度的波动的信息检测装置。 通过输送路径输送的记录纸张P与移动部件接触，在该状态下驱动马达使凸轮旋转，螺旋弹簧的弹力使加压部件与记录纸张碰撞 P.此时的冲击力由检测传感器检测，并被发送到片材信息获取装置。 然后，根据检测结果，可以检测记录纸张P的类型，密度，厚度，表面凹凸等。此时，记录纸张P与移动部件接触，由此 可以减少由于记录纸P的位置偏差引起的检测精度的波动。