公开(公告)号：US20090269490A1

公开(公告)日：2009-10-29

申请号：US12425148

申请日：2009-04-16

申请人： Yoshikazu MORIYAMA ,  Hideaki NISHIKAWA ,  Masayoshi YAJIMA ,  Hiroshi FURUTANI ,  Shinichi MITANI ,  Michio NISHIBAYASHI

发明人： Yoshikazu MORIYAMA ,  Hideaki NISHIKAWA ,  Masayoshi YAJIMA ,  Hiroshi FURUTANI ,  Shinichi MITANI ,  Michio NISHIBAYASHI

IPC分类号： C23C16/44 ,  B05C11/00 ,  B05D3/12

CPC分类号： H01L21/68785 ,  C23C16/4412 ,  C23C16/4584 ,  C23C16/4586 ,  H01L21/67109 ,  H01L21/6838 ,  H01L21/68735

摘要： An object of the present invention is to provide a coating apparatus in which the substrate can be reliably rotated at high speed. Another object of the invention is to provide a coating method of forming a coating on a substrate while reliably rotating it at high speed. A coating apparatus includes a susceptor for supporting a silicon wafer, and a rotating portion for rotating the susceptor. The rotating portion is covered on top with the susceptor to form a P2 region. The contact surface of the susceptor with the silicon wafer has a plurality of holes therein. The silicon wafer is attached to the susceptor by evacuating gas from the P2 region.

摘要翻译： 本发明的目的在于提供一种能够高速可靠地旋转基板的涂布装置。 本发明的另一个目的是提供一种在可靠地高速旋转基板的同时在基板上形成涂层的涂布方法。 涂覆装置包括用于支撑硅晶片的基座和用于旋转基座的旋转部分。 旋转部分在顶部被基座覆盖以形成P2区域。 具有硅晶片的基座的接触面在其中具有多个孔。 通过从P2区域排出气体将硅晶片附接到基座。

公开(公告)号：US20090111278A1

公开(公告)日：2009-04-30

申请号：US12257845

申请日：2008-10-24

申请人： Masayoshi YAJIMA ,  Yoshikazu Moriyama

发明人： Masayoshi YAJIMA ,  Yoshikazu Moriyama

IPC分类号： H01L21/302 ,  C23C16/46

CPC分类号： H01L21/0262 ,  C23C16/402 ,  C23C16/4405 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02661

摘要： A manufacturing method for a semiconductor device includes retaining a wafer in a reaction chamber, supplying first process gas including source gas and second process gas containing H2 or inert gas onto the wafer in a rectified state alternately in a predetermined cycle, rotating the wafer, and heating the wafer to form a film on the wafer.

摘要翻译： 一种半导体装置的制造方法，其特征在于，将晶片保持在反应室内，以预定的周期交替地，以规定的周期，将包含源气体的第一处理气体和含有H 2或惰性气体的第二处理气体以精炼状态交替地供给到晶片上，旋转晶片， 加热晶片以在晶片上形成膜。

公开(公告)号：US20090142933A1

公开(公告)日：2009-06-04

申请号：US12324578

申请日：2008-11-26

申请人： Masayoshi YAJIMA ,  Kunihiko SUZUKI

发明人： Masayoshi YAJIMA ,  Kunihiko SUZUKI

IPC分类号： H01L21/302 ,  B05B3/02

CPC分类号： H01L21/67109 ,  H01L21/02381 ,  H01L21/0262 ,  H01L21/67017 ,  H01L21/68785 ,  H01L21/68792

摘要： A manufacturing apparatus for a semiconductor device, includes: a reaction chamber to which a wafer w is loaded; a gas supply port for supplying first process gas including source gas from an upper portion of the reaction chamber; a first rectifying plate for supplying the first process gas onto the wafer in a rectifying state; a first gas exhaust port for exhausting gas from a lower portion of the reaction chamber; a second gas exhaust port for exhausting gas from the upper portion of the reaction chamber; a heater for heating the wafer w; a susceptor for retaining the wafer w; and a rotation drive unit for rotating the wafer w.

摘要翻译： 一种半导体器件的制造装置，包括：加载有晶片w的反应室; 用于从反应室的上部供给包括源气体的第一处理气体的气体供给口; 第一整流板，用于在整流状态下将第一处理气体供应到晶片上; 用于从反应室的下部排出气体的第一排气口; 用于从反应室的上部排出气体的第二排气口; 用于加热晶片w的加热器; 用于保持晶片w的基座; 以及用于旋转晶片w的旋转驱动单元。