公开(公告)号：US20060181242A1

公开(公告)日：2006-08-17

申请号：US11366303

申请日：2006-03-01

申请人： Mason Freed ,  Randall Mundt ,  Costas Spanos

发明人： Mason Freed ,  Randall Mundt ,  Costas Spanos

IPC分类号： H02J7/00

CPC分类号： H02J7/025 ,  H02J50/12

摘要： Presented are methods, systems, and apparatuses for managing and maintaining an electronic device such as a sensor apparatus.

摘要翻译： 提出了用于管理和维护诸如传感器装置的电子设备的方法，系统和装置。

公开(公告)号：US20060249729A1

公开(公告)日：2006-11-09

申请号：US11281238

申请日：2005-11-16

申请人： Randall Mundt ,  Paul MacDonald ,  Andrew Beers ,  Mason Freed ,  Costas Spanos

发明人： Randall Mundt ,  Paul MacDonald ,  Andrew Beers ,  Mason Freed ,  Costas Spanos

IPC分类号： H01L21/66 ,  H01L23/58

CPC分类号： G01N27/60 ,  G01K7/25 ,  G01N33/0004 ,  G01R15/24 ,  G01R29/12 ,  H01L21/67248 ,  H01L21/67253 ,  H01L2924/0002 ,  H01L2924/00

摘要： A sensor apparatus for measuring a plasma process parameter for processing a workpiece. The sensor apparatus includes a base, an information processor supported on or in the base, and at least one sensor supported on or in the base. The at least one sensor includes at least one sensing element configured for measuring an electrical property of a plasma and at least one transducer coupled to the at least one sensing element. The transducer is configured so as to receive a signal from the sensing element and converting the signal into a second signal for input to the information processor.

摘要翻译： 一种用于测量用于处理工件的等离子体工艺参数的传感器装置。 传感器装置包括基座，支撑在基座上或底座中的信息处理器以及支撑在基座上或基座中的至少一个传感器。 所述至少一个传感器包括被配置用于测量等离子体的电特性的至少一个感测元件和耦合到所述至少一个感测元件的至少一个换能器。 传感器被配置为接收来自感测元件的信号并将信号转换成第二信号以输入到信息处理器。

公开(公告)号：US20060289763A1

公开(公告)日：2006-12-28

申请号：US11430315

申请日：2006-07-20

申请人： Randall Mundt ,  Andrew Beers ,  Paul MacDonald ,  Mason Freed ,  Dean Hunt

发明人： Randall Mundt ,  Andrew Beers ,  Paul MacDonald ,  Mason Freed ,  Dean Hunt

IPC分类号： G01J5/00

CPC分类号： G01J1/4228 ,  G01J1/02 ,  G01J1/0204

摘要： One or more problems related to processing workpieces using processes that involve optical radiation are presented along with solutions to one or more of the problems. One embodiment of the invention comprises a sensor apparatus for collecting optical radiation data representing one or more process conditions used for processing a workpiece. In a further embodiment, the sensor apparatus is also configured for measuring data other than optical radiation.

公开(公告)号：USRE39145E1

公开(公告)日：2006-06-27

申请号：US10603740

申请日：2003-06-26

申请人： Andrew Perry ,  Randall Mundt

发明人： Andrew Perry ,  Randall Mundt

IPC分类号： G01B11/06

CPC分类号： G01B11/0683

摘要： An interferometric method and apparatus for in-situ monitoring of a thin film thickness and of etch and deposition rates using a pulsed flash lamp providing a high instantaneous power pulse and having a wide spectral width. The optical path between the flash lamp and a spectrograph used for detecting light reflected from a wafer is substantially transmissive to the ultraviolet range of the spectrum making available to the software algorithms operable to calculate film thickness and etch and deposition rates desirable wavelengths.

公开(公告)号：US20070243794A1

公开(公告)日：2007-10-18

申请号：US11392220

申请日：2006-03-28

申请人： Randall Mundt

发明人： Randall Mundt

IPC分类号： B24B49/10

CPC分类号： B24B37/005 ,  B24B37/04 ,  B24B49/16

摘要： Some problems related to processing workpieces are presented along with solutions to one or more of the problems. One embodiment of the invention comprises a sensor apparatus for collecting data representing one or more process conditions used for processing a workpiece. Another embodiment of the present invention is a combination comprising a sensor apparatus and a process tool for applications such as chemical mechanical planarization of workpieces and chemical mechanical polishing of workpieces.

摘要翻译： 与处理工件有关的一些问题与一个或多个问题的解决方案一起呈现。 本发明的一个实施例包括用于收集表示用于处理工件的一个或多个工艺条件的数据的传感器装置。 本发明的另一实施例是一种组合，其包括传感器装置和用于诸如工件的化学机械平面化和工件的化学机械抛光等应用的工艺工具。

公开(公告)号：US6160621A

公开(公告)日：2000-12-12

申请号：US409842

申请日：1999-09-30

申请人： Andrew Perry ,  Randall Mundt

发明人： Andrew Perry ,  Randall Mundt

IPC分类号： C23C14/54 ,  C23C16/52 ,  G01B11/06 ,  H01L21/205 ,  H01L21/3065

CPC分类号： G01B11/0683

摘要： An interferometric method and apparatus for in-situ monitoring of a thin film thickness and of etch and deposition rates using a pulsed flash lamp providing a high instantaneous power pulse and having a wide spectral width. The optical path between the flash lamp and a spectrograph used for detecting light reflected from a wafer is substantially transmissive to the ultraviolet range of the spectrum making available to the software algorithms operable to calculate film thickness and etch and deposition rates desirable wavelengths.

摘要翻译： 一种用于使用提供高瞬时功率脉冲并具有宽光谱宽度的脉冲闪光灯来即时监测薄膜厚度和蚀刻和沉积速率的干涉测量方法和装置。 闪光灯与用于检测从晶片反射的光的光谱仪之间的光路基本上对于可用于计算膜厚度和蚀刻和沉积速率所需波长的软件算法可用的光谱的紫外范围基本上是透射的。