公开(公告)号：US10095083B2

公开(公告)日：2018-10-09

申请号：US15463717

申请日：2017-03-20

Applicant: Deutsches Elektronen-Synchrotron DESY ,  Massachusetts Institute of Technology (MIT)

Inventor： Franz X. Kaertner ,  Damian N. Barre ,  Michael Hemmer ,  Giovanni Cirmi ,  Oliver D. Muecke ,  Giulio Maria Rossi ,  Arya Fallahi ,  Nicholas H. Matlis ,  Luis E. Zapata ,  Koustuban Ravi ,  Fabian Reichert

IPC: G02F2/02 ,  G02F1/355 ,  G02F1/35 ,  G02F1/39

Abstract: A method of generating THz radiation includes the steps of generating optical input radiation with an input radiation source device (10), irradiating a first conversion crystal device (30) with the optical input radiation, wherein the first conversion crystal device (30) is arranged in a single pass configuration, and generating the THz radiation having a THz frequency in the first conversion crystal device (30) in response to the optical input radiation by an optical-to-THz-conversion process, wherein a multi-line frequency spectrum is provided by the optical input radiation in the first conversion crystal device (30), and the optical-to-THz-conversion process includes cascaded difference frequency generation using the multi-line frequency spectrum. Furthermore, a THz source apparatus being configured for generating THz radiation and applications thereof are described.

公开(公告)号：US12287239B2

公开(公告)日：2025-04-29

申请号：US17471758

申请日：2021-09-10

Applicant: Massachusetts Institute of Technology ,  The Regents of the University of California ,  Deutsches Elektronen-Synchrontron DESY

Inventor： Marco Turchetti ,  Mina Bionta ,  Felix Ritzkowsky ,  Yujia Yang ,  Dario Cattozzo Mor ,  William Putnam ,  Franz X. Kaertner ,  Karl K. Berggren ,  Phillip Donald Keathley

IPC: G01J1/44 ,  B82Y20/00 ,  G02B6/122

Abstract: Some aspects are directed to an all-on-chip, optoelectronic device for sampling arbitrary, low-energy, near-infrared waveforms under ambient conditions. This solid-state integrated detector uses optical-field-driven electron emission from resonant nanoantennas to achieve petahertz-level switching speeds by generating on-chip attosecond electron burst. Also disclosed is a cross-correlation technique based on perturbation of local electron field emission rates that allows for the full characterization of arbitrary electric fields down to 1 femtojoule, and/or on the order of 500 kV/m, using plasmonic nanoantennas.

公开(公告)号：US10305253B2

公开(公告)日：2019-05-28

申请号：US15592905

申请日：2017-05-11

Applicant: Massachusetts Institute of Technology

Inventor： Katia Shtyrkova ,  Erich P. Ippen ,  Franz X. Kaertner ,  Patrick T. Callahan ,  Michael R. Watts

IPC: H01S5/06 ,  H01S5/065 ,  H01S3/063 ,  H01S3/11 ,  H01S5/024 ,  H01S5/026 ,  H01S5/04 ,  H01S5/042 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/10 ,  H01S3/08 ,  H01S3/082 ,  H01S3/16

Abstract: An artificial saturable absorber uses additive pulse mode-locking to enable pulse operation of an on-chip laser operation. Four different artificial saturable absorbers are disclosed. The first includes an integrated coupler, two arms each containing some implementation of the end-reflector, and a phase bias element in one arm. The second includes an integrated directional coupler, two integrated waveguide arms, and another integrated coupler as an output. The third includes an integrated birefringent element, integrated birefringent-free waveguide, and integrated polarizer. And the fourth includes a multimode waveguide that allows for different modes to propagate in such a way that the difference in the spatial distribution of intensity causes a nonlinear phase difference between the modes. These are just some examples of an on-chip fully integrated artificial saturable absorber with instantaneous recovery time that allow for generation of sub-femtosecond optical pulses at high repetition rates using passive mode-locking.