公开(公告)号：US09793479B2

公开(公告)日：2017-10-17

申请号：US13714934

申请日：2012-12-14

Applicant: Massachusetts Institute of Technology

Inventor： Karen K. Gleason ,  Vladimir Bulovic ,  Miles C. Barr ,  David C. Borrelli

IPC: H01L51/00 ,  H01L51/42 ,  H01L51/56 ,  B82Y10/00

CPC classification number: H01L51/0008 ,  B82Y10/00 ,  H01L51/0036 ,  H01L51/0046 ,  H01L51/0047 ,  H01L51/42 ,  H01L51/56 ,  Y02E10/549

Abstract: Embodiments described herein provide methods for processing various polymer materials for use in devices, such as photovoltaic devices. In some cases, oxidative chemical vapor deposition (oCVD) may be used to process conjugated polymers, including relatively insoluble conjugated polymers. The methods described herein provide processing techniques that may be used to synthesize and/or process polymers, such as unsubstituted thiophene.

公开(公告)号：US20150311444A9

公开(公告)日：2015-10-29

申请号：US14378544

申请日：2013-02-13

Applicant: Massachusetts Institute of Technology

Inventor： Miles C. Barr ,  Rachel M. Howden ,  Karen K. Gleason ,  Vladimir Bulovic

IPC: H01L51/00 ,  H01L51/44

CPC classification number: H01L51/0037 ,  B82Y10/00 ,  H01L51/0021 ,  H01L51/0046 ,  H01L51/0056 ,  H01L51/0097 ,  H01L51/441 ,  H01L51/442 ,  H01L2251/308 ,  Y02E10/549

Abstract: The present invention generally relates to electrodes formed by oxidative chemical vapor deposition and related methods and devices.

Abstract translation: 本发明一般涉及通过氧化化学气相沉积形成的电极及其相关方法和装置。

公开(公告)号：US20150044804A1

公开(公告)日：2015-02-12

申请号：US14378564

申请日：2013-02-13

Applicant: Massachusetts Institute of Technology ,  Eni S.p.A.

Inventor： Miles C. Barr ,  Karen K. Gleason ,  Chiara Carbonera ,  Riccardo Po ,  Vladimir Bulovic

IPC: H01L51/00 ,  C08G61/12 ,  H01B1/12 ,  H01L51/56 ,  H01L51/44

CPC classification number: H01L51/0021 ,  B82Y10/00 ,  C08G61/126 ,  C08G2261/3223 ,  C08G2261/3247 ,  C08G2261/70 ,  C08G2261/91 ,  C08G2261/95 ,  H01B1/127 ,  H01L51/0037 ,  H01L51/0046 ,  H01L51/0056 ,  H01L51/424 ,  H01L51/44 ,  H01L51/441 ,  H01L51/56 ,  H01L2251/308 ,  Y02E10/549

Abstract: The present invention generally relates to cathode buffer materials and devices and methods comprising the cathode buffer materials.

Abstract translation: 本发明一般涉及阴极缓冲材料和包括阴极缓冲材料的装置和方法。

公开(公告)号：US20150027529A1

公开(公告)日：2015-01-29

申请号：US14378544

申请日：2013-02-13

Applicant: Massachusetts Institute of Technology

Inventor： Miles C. Barr ,  Rachel M. Howden ,  Karen K. Gleason ,  Vladimir Bulovic

IPC: H01L51/00 ,  H01L51/44

CPC classification number: H01L51/0037 ,  B82Y10/00 ,  H01L51/0021 ,  H01L51/0046 ,  H01L51/0056 ,  H01L51/0097 ,  H01L51/441 ,  H01L51/442 ,  H01L2251/308 ,  Y02E10/549

Abstract: The present invention generally relates to electrodes formed by oxidative chemical vapor deposition and related methods and devices.

公开(公告)号：US09553268B2

公开(公告)日：2017-01-24

申请号：US14378564

申请日：2013-02-13

Applicant: Massachusetts Institute of Technology ,  Eni S.p.A.

Inventor： Miles C. Barr ,  Karen K. Gleason ,  Chiara Carbonera ,  Riccardo Po ,  Vladimir Bulovic

IPC: H01L51/00 ,  C08G61/12 ,  H01L51/44 ,  H01B1/12 ,  B82Y10/00 ,  H01L51/56 ,  H01L51/42

CPC classification number: H01L51/0021 ,  B82Y10/00 ,  C08G61/126 ,  C08G2261/3223 ,  C08G2261/3247 ,  C08G2261/70 ,  C08G2261/91 ,  C08G2261/95 ,  H01B1/127 ,  H01L51/0037 ,  H01L51/0046 ,  H01L51/0056 ,  H01L51/424 ,  H01L51/44 ,  H01L51/441 ,  H01L51/56 ,  H01L2251/308 ,  Y02E10/549

Abstract: The present invention generally relates to cathode buffer materials and devices and methods comprising the cathode buffer materials.

Abstract translation: 本发明一般涉及阴极缓冲材料和包括阴极缓冲材料的装置和方法。