公开(公告)号：US06902870B1

公开(公告)日：2005-06-07

申请号：US10174915

申请日：2002-06-19

申请人： Massud-A. Aminpur ,  Kay Hellig

发明人： Massud-A. Aminpur ,  Kay Hellig

IPC分类号： G03F7/00 ,  H01L21/311 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/31144 ,  H01L21/31116 ,  H01L21/76802

摘要： For patterning an opening through a patterned material, a coating material, a slow-etch material, and a photoresist material are deposited over the patterned material. The opening is patterned through the photoresist material, and the slow-etch material exposed through the opening is etched away. The photoresist material and the coating material exposed through the opening are then etched away. A remaining portion of the slow-etch hard-mask material and the patterned material exposed through the opening are then etched away such that the coating material outside of the opening is exposed. A remaining portion of the coating material is then etched away with an etch agent that does not etch the patterned material.

摘要翻译： 为了通过图案化材料图案化开口，涂覆材料，慢蚀刻材料和光致抗蚀剂材料沉积在图案化材料上。 通过光致抗蚀剂材料将开口图案化，并且通过开口暴露的慢蚀刻材料被蚀刻掉。 然后蚀刻掉光致抗蚀剂材料和通过开口暴露的涂层材料。 然后蚀刻掉慢蚀刻硬掩模材料的剩余部分和通过开口暴露的图案化材料，使得露出外部的涂层材料。 然后用不蚀刻图案化材料的蚀刻剂蚀刻掉涂层材料的剩余部分。