公开(公告)号：US06344390B1

公开(公告)日：2002-02-05

申请号：US09607217

申请日：2000-06-30

申请人： Mathias Bostelmann ,  Corine Bucher ,  Patrick Raffin ,  Francis Rodier ,  Jean-Marc Rousseau

发明人： Mathias Bostelmann ,  Corine Bucher ,  Patrick Raffin ,  Francis Rodier ,  Jean-Marc Rousseau

IPC分类号： H01L218242

CPC分类号： H01L27/10867

摘要： There is disclosed a method of forming a buried strap (BS) and its quantum conducting barrier (QCB) in a structure wherein a doped polycrystalline silicon region is exposed at the bottom of a recess and separated from a monocrystalline region of a silicon substrate by a region of an insulating material. First, a thin continuous layer of undoped amorphous silicon is deposited by LPCVD to coat said regions. The surface of this layer is nitridized to produce a Si3N4 QCB film. Now, at least one dual layer comprised of an undoped amorphous silicon layer and a dopant monolayer is deposited onto the structure by LPCVD. The recess is filled with undoped amorphous silicon to terminate the buried strap and its QCB. Finally, the structure is heated to activate the dopants in the buried strap to allow an electrical continuity between said polycrystalline and monocrystalline regions through the QCB by a quantum mechanical effect. All these steps are performed in situ in the same LPCVD tool.

摘要翻译： 公开了一种在其中掺杂多晶硅区域暴露在凹陷的底部并与硅衬底的单晶区域分离的结构中的掩埋带（BS）及其量子传导屏障（QCB）的形成方法， 绝缘材料的区域。 首先，通过LPCVD沉积薄层的未掺杂非晶硅，以涂覆所述区域。 将该层的表面氮化以产生Si 3 N 4 QCB膜。 现在，通过LPCVD将至少一个由未掺杂的非晶硅层和掺杂剂单层组成的双层沉积到该结构上。 凹槽填充有未掺杂的非晶硅，以终止埋管带及其QCB。 最后，将结构加热以激活埋入带中的掺杂剂，以通过量子力学效应通过QCB在所述多晶和单晶区域之间实现电连续性。 所有这些步骤在相同的LPCVD工具中原位进行。

公开(公告)号：US06344673B1

公开(公告)日：2002-02-05

申请号：US09607214

申请日：2000-06-30

申请人： Caroline Aussilhou ,  Corinne Buchet ,  Patrick Raffin ,  Francis Rodier ,  Jean-Marc Rousseau

发明人： Caroline Aussilhou ,  Corinne Buchet ,  Patrick Raffin ,  Francis Rodier ,  Jean-Marc Rousseau

IPC分类号： H01L27108

CPC分类号： H01L27/10867 ,  H01L29/88

摘要： A multilayered quantum conducting barrier (MQCB) structure formed on two semiconductor regions having a different crystalline nature and a thin layer of an insulating material sandwiched between said semiconductor regions. An undoped amorphous silicon layer continuously coats these two semiconductor regions and insulating layer. The surface of the undoped amorphous silicon layer is nitridized to produce a superficial film of a nitride based material to form the desired quantum conducting barrier (QCB). A stack consisting of at least one dual layer comprised of a bottom undoped amorphous silicon layer and a top dopant monolayer is formed on said undoped amorphous silicon layer. After thermal processing, the MQCB structure operates as a strap allowing an electrical continuity between these semiconductor regions through the QCB by a quantum mechanical effect.

摘要翻译： 形成在具有不同晶体性质的两个半导体区域上的多层量子导电屏障（MQCB）结构和夹在所述半导体区域之间的绝缘材料的薄层。 未掺杂的非晶硅层连续地涂覆这两个半导体区域和绝缘层。 将未掺杂的非晶硅层的表面氮化以产生氮化物基材料的表面膜以形成所需的量子传导屏障（QCB）。 在所述未掺杂非晶硅层上形成由至少一个由底部未掺杂非晶硅层和顶部掺杂剂单层组成的双层组成的叠层。 在热处理之后，MQCB结构作为带通过量子力学效应通过QCB在这些半导体区域之间进行电连续性操作。

公开(公告)号：US06310359B1

公开(公告)日：2001-10-30

申请号：US09559897

申请日：2000-04-26

申请人： Susan E. Chaloux ,  Caroline Aussilhou ,  Corinne Buchet ,  Heidi L. Greer ,  Rajarao Jammy ,  Patrick Raffin ,  Francis Rodier ,  Jean-Marc Rousseau

发明人： Susan E. Chaloux ,  Caroline Aussilhou ,  Corinne Buchet ,  Heidi L. Greer ,  Rajarao Jammy ,  Patrick Raffin ,  Francis Rodier ,  Jean-Marc Rousseau

IPC分类号： H01L2906

CPC分类号： H01L27/10867 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/945

摘要： Improved reliability structures containing quantum conductive barrier layer structures are obtained by employing quantum conductive layers in combination with thin regions of amorphous or microcrystalline semiconductor material. The quantum conductive structures are especially useful when incorporated into trench capacitors to reduce or eliminate the occurrence of low temperature fails and single cell fails in DRAM circuits.

摘要翻译： 包含量子导电阻挡层结构的改进的可靠性结构通过使用量子传导层与非晶或微晶半导体材料的薄区组合来获得。 量子导电结构在结合到沟槽电容器中时特别有用，以减少或消除低温故障的发生，并且在DRAM电路中单电池失效。

公开(公告)号：US06361313B1

公开(公告)日：2002-03-26

申请号：US09628863

申请日：2000-07-28

申请人： Olivier Beyaert ,  Jean-Pierre Mazur ,  Patrick Raffin ,  Francis Rodier

发明人： Olivier Beyaert ,  Jean-Pierre Mazur ,  Patrick Raffin ,  Francis Rodier

IPC分类号： F27D500

CPC分类号： H01L21/67309 ,  G03F7/70691

摘要： The present invention relates generally to an improved ladder boat for supporting semiconductor wafers during thermal treatments which comprises top and bottom plates vertically opposing each other and support rods secured to said plates. Said support rods are provided with dividers for supporting a plurality of wafers one above another in a parallel arrangement. The dividers have a special profile to include a ramp portion so that the wafer is seated at a sharp corner thereof. Therefore, the contact surface between the wafer backside at its periphery and the dividers is segmental or punctual. This contact is preferably performed outside the contact area between the wafer backside and the wafer support zones of the electrostatic chuck of the photolithography tool to be subsequently used in the course of the wafer manufacturing.

摘要翻译： 本发明一般涉及一种用于在热处理期间支撑半导体晶片的改进的梯形船，其包括垂直相对的顶板和底板以及固定到所述板的支撑杆。 所述支撑杆设置有用于以并联布置支撑多个晶片的分隔件。 分隔器具有特殊的轮廓以包括斜面部分，使得晶片位于其尖角处。 因此，其周边的晶片背面与分隔件之间的接触表面是分段的或准时的。 该接触优选在晶片背面和光刻工具的静电卡盘的晶片支撑区域之间的接触区域的外部进行，以在晶片制造过程中随后使用。