公开(公告)号：US06582221B1

公开(公告)日：2003-06-24

申请号：US10200573

申请日：2002-07-19

Applicant: Theodurus Gerardus Maria Oosterlaken

Inventor： Theodurus Gerardus Maria Oosterlaken

IPC: F27D500

CPC classification number: H01L21/67309 ,  C30B25/12 ,  C30B31/14 ,  H01L21/67109 ,  H01L21/67346

Abstract: A substrate holder for vertical furnaces is configured to support substrates in slots at inner portions of the substrates, rather than solely at the edges. The holder allows sufficient clearance above substantially the entire front face of the substrate that a substrate deflection or bow, induced by thermal stresses during loading and unloading of the substrate holder into and out of the furnace, can be accommodated without the substrate touching the support members of the substrate holder. A relationship is established such that, for given loading/unloading temperatures, a minimum amount of free space in the wafer slots is provided to avoid substrate scratching. Conversely, for a given amount of free space in the wafer slots, the relationship provides maximum loading and/or unloading temperatures to avoid scratching.

Abstract translation: 用于垂直炉的衬底保持器被配置为在衬底的内部部分的槽中支撑衬底，而不是仅在边缘处支撑衬底。 保持器允许在基板的整个前表面上方具有足够的间隙，使得可以容纳在衬底夹持器进入和离开炉子期间由热应力引起的衬底偏转或弓形，而基板接触支撑构件 的衬底保持器。 建立关系，使得对于给定的加载/卸载温度，提供晶片槽中的最小量的自由空间以避免基板刮擦。 相反，对于给定量的晶片槽中的自由空间，该关系提供了最大的加载和/或卸载温度以避免划伤。

公开(公告)号：US06290491B1

公开(公告)日：2001-09-18

申请号：US09607155

申请日：2000-06-29

Applicant: Iraj Shahvandi ,  Oliver Vatel ,  Peggy John

Inventor： Iraj Shahvandi ,  Oliver Vatel ,  Peggy John

IPC: F27D500

CPC classification number: C23C16/45565 ,  C23C16/4557 ,  C23C16/46 ,  C30B25/10 ,  C30B25/14

Abstract: Heating (200) a semiconductor wafer (150) in a process chamber (100) is performed in the order of: placing (210) the wafer (100) with the backside (152) on a plurality of support elements (112) that extend from a chuck (100); ejecting (220) a heating gas (122, He) from a shower head (120) located within the process chamber (100) to the frontside (151) of the wafer (150); and moving (230) the support elements (112) into recesses (111) within the chuck (100) to that the wafer backside (152) touches the chuck (110).

Abstract translation: 在处理室（100）中加热（200）半导体晶片（150）的顺序为：将具有背面（152）的晶片（100）放置（210）到多个延伸的支撑元件（112） 从卡盘（100） 从位于所述处理室（100）内的淋浴喷头（120）向所述晶片（150）的前侧（151）喷射（220）加热气体（122，He） 并且将所述支撑元件（112）移动（230）到所述卡盘（100）内的凹槽（111）中，使得所述晶片背面（152）接触所述卡盘（110）。

公开(公告)号：US06716027B2

公开(公告)日：2004-04-06

申请号：US09970690

申请日：2001-10-05

Applicant: Hong-Guen Kim ,  Bi-Cher Kim

Inventor： Hong-Guen Kim ,  Bi-Cher Kim

IPC: F27D500

CPC classification number: H01L21/67303 ,  C30B31/14 ,  H01L21/67309

Abstract: A semiconductor wafer boat has a plurality of discrete boat parts stacked one atop the other. Each of the of the boat parts includes a wafer support in the form of a plurality of columns each having a plurality of vertically spaced apart grooves for use in supporting semiconductor wafers as vertically spaced from one another. Corresponding ones of the grooves in the columns of a boat part can receive the outer peripheral edge of the wafer directly, or a ring plate to which the wafer is mounted. Each adjacent pair of boat parts has confronting end portions forming a joint at which the boat parts of the pair are freely coupled to one another such that each of the boat parts may be replaced independently of the other boat parts. Thus, when any of the boat parts experiences thermal deformation after long periods of use, the boat part may be readily replaced without damaging any part of the boat and without the costs associated with replacing the boat entirely.

Abstract translation: 半导体晶片舟皿具有彼此叠置的多个分立的舟状部件。 每个船舶部件包括多个列的形式的晶片支撑，每个柱具有多个垂直间隔的槽，用于将半导体晶片彼此垂直间隔地支撑。 舟形部件的列中相应的凹槽中的凹槽可以直接接收晶片的外围边缘，或者可以接收晶片安装的环形板。 每对相邻的船舶部件具有形成接头的相对端部，在该接头处，该对的船形部件彼此自由地连接，使得每个船舶部件可以独立于其他船舶部件进行更换。 因此，当任何船舶部件在长时间使用之后经历热变形时，船部件可以容易地更换，而不损坏船的任何部分，并且没有与完全更换船相关的成本。

公开(公告)号：US06709267B1

公开(公告)日：2004-03-23

申请号：US10331444

申请日：2002-12-27

Applicant: Mark Hawkins ,  Matthew G. Goodman ,  Loren Jacobs

Inventor： Mark Hawkins ,  Matthew G. Goodman ,  Loren Jacobs

IPC: F27D500

CPC classification number: F27D99/0001 ,  C23C16/4585 ,  C30B25/12 ,  C30B31/14 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/67103 ,  Y10S414/135

Abstract: A substrate holder for processing a semiconductor substrate includes a deep, generally vertical annular groove configured to impede the radial flow of heat within the holder and reduce heat loss from the annular side edge of the holder. The holder includes one or more support elements, such as a flat contiguous surface or a plurality of protrusions defined by intersecting grooves. The one or more support elements are configured to support a substrate a particular size in a support plane defined by the one or more support elements. The groove is configured to surround an outer edge of the substrate when the substrate is supported on the one or more support elements. In a preferred embodiment, the groove has a depth of at least 25% of the thickness of the substrate holder.

Abstract translation: 用于处理半导体衬底的衬底保持器包括深的大致垂直的环形槽，其被构造成阻止保持器内的热量的径向流动并减少从保持器的环形侧边缘的热损失。 保持器包括一个或多个支撑元件，例如平坦的邻接表面或由相交槽限定的多个突起。 一个或多个支撑元件构造成在由一个或多个支撑元件限定的支撑平面中支撑特定尺寸的基板。 当衬底被支撑在一个或多个支撑元件上时，凹槽被构造成围绕衬底的外边缘。 在优选实施例中，凹槽的深度至少为衬底保持器的厚度的25％。

公开(公告)号：US06644964B2

公开(公告)日：2003-11-11

申请号：US09883198

申请日：2001-06-19

Applicant: Eiichi Shirakawa ,  Toshichika Takei

Inventor： Eiichi Shirakawa ,  Toshichika Takei

IPC: F27D500

CPC classification number: H01L21/67109

Abstract: A heating processing chamber has a plate for holding a wafer and a heater heating the plate portion. The plate portion is composed of a plurality of divided plates separated from each other, and thereby the plate is hard to break even through a drastic change in temperature, thus making it possible to increase the durability of the plate.

Abstract translation: 加热处理室具有用于保持晶片的板和加热板部的加热器。 板部分由彼此分开的多个分开的板组成，从而即使通过剧烈的温度变化，板也难以断裂，从而可以提高板的耐久性。

公开(公告)号：US06582223B2

公开(公告)日：2003-06-24

申请号：US09990257

申请日：2001-11-23

Applicant: Hiroshi Yasumura ,  Tadayuki Into ,  Noriki Iwasaki ,  Yasuhiro Goto ,  Tatsuyuki Ishioka

Inventor： Hiroshi Yasumura ,  Tadayuki Into ,  Noriki Iwasaki ,  Yasuhiro Goto ,  Tatsuyuki Ishioka

IPC: F27D500

CPC classification number: H01L21/6838

Abstract: A semiconductor chip pickup apparatus of the present invention includes an aspiration section and an aspiration unit connected to the aspiration section, in which the aspiration unit includes a stage for mounting the semiconductor chip thereon and an adhesive sheet is attached to the semiconductor chip between the stage and the semiconductor chip, the stage includes undulations in at least a part of an area in which the semiconductor chip is mounted, and by operating the aspiration section, a suction force is applied to at least a part of an area in which the undulations are formed.

公开(公告)号：US06474987B1

公开(公告)日：2002-11-05

申请号：US09831032

申请日：2001-07-09

Applicant: Tetsuya Nakai ,  Katsuo Arai ,  Makoto Shinohara ,  Fumitomo Kawahara ,  Makoto Saito ,  Yasuhiko Kawamura

Inventor： Tetsuya Nakai ,  Katsuo Arai ,  Makoto Shinohara ,  Fumitomo Kawahara ,  Makoto Saito ,  Yasuhiko Kawamura

IPC: F27D500

CPC classification number: H01L21/68735 ,  C23C16/4583 ,  C30B25/12 ,  C30B31/14 ,  H01L21/67309 ,  H01L21/6875

Abstract: A wafer (22) is placed on an upper surface of a holder body (23), and the holder body is inserted into a plurality of holder-aimed concave recesses (14) formed on supporters (12) accommodated in a heat treatment furnace such that the holder body is held horizontally. The holder body is formed into a disk shape free of recessed cut portions, and the holder body is formed with an upwardly projecting ring-like projection (24) extending in the circumferential direction of the holder body around the axis of the holder body. The wafer holder is constituted such that the wafer is placed on the holder body while contacting with the upper surface of the projection, and such that the outer diameter of the projection is formed to be in a range of 0.5D to 0.98D wherein D is the diameter of the wafer, so that the outer periphery of the wafer is kept from contacting with the projection. Occurrence of slips in the wafer is restricted by preventing warpage of the holder body upon fabricating the holder body. Further, each of wafers having different diameters is assuredly held by the same holder body without deviating from a relevant predetermined position. Moreover, the working operations for loading and unloading the wafer to and from the holder body are smoothly conducted.

Abstract translation: 将晶片（22）放置在保持器主体（23）的上表面上，并且将保持器主体插入形成在容纳在热处理炉中的支撑体（12）上的多个保持器目标凹入凹部（14）中， 保持器主体水平地保持。 保持体形成为没有凹进切口部的圆盘形状，并且保持体形成有沿保持体本体的周向延伸的向上突出的环状突起（24）。 晶片保持器构成为使得晶片与突起的上表面接触地放置在保持器主体上，并且使得突起的外径形成为0.5D至0.98D的范围，其中D为 晶片的直径，使得晶片的外周保持不与突起接触。通过在制造保持器主体时防止保持器本体的翘曲来限制晶片中的滑移。 此外，具有不同直径的每个晶片在不偏离相关预定位置的情况下可靠地由相同的保持器主体保持。 此外，平滑地进行用于将晶片装载到保持器主体和从保持器主体卸载的工作操作。

公开(公告)号：US06461155B1

公开(公告)日：2002-10-08

申请号：US09919399

申请日：2001-07-31

Applicant: E. Derryck Settles

Inventor： E. Derryck Settles

IPC: F27D500

CPC classification number: H01L21/67109 ,  B01J3/008 ,  F28F13/00 ,  Y02P20/544

Abstract: A heater for heating a substrate in a supercritical fluid reactor includes a heater body having a heater chamber initially open to the interior of the reactor. The heater chamber is sized to match the substrate and includes a seal around its perimeter that seals against the perimeter of the substrate and forms a closed heater chamber with the backside of the substrate. A heating element, insulated from the heater body, preferably with pyrolytic graphite, is located in the heater chamber to heat the substrate from the backside. A clamp ring with a seal around its inner perimeter cooperates with the heater body to seal the substrate to the heater body. The heater is preferably spaced apart from the substrate, as well as the walls of the eater chamber and the insulator, to provide uniform heating by transferring heat through the supercritical fluid. The invention is also directed to the method of heating the substrate in which the supercritical fluid reactor is pressurized before the heater chamber is sealed or isolated to maintain uniform pressure on the substrate.

Abstract translation: 用于加热超临界流体反应器中的衬底的加热器包括加热器主体，其具有最初向反应器内部开口的加热器室。 加热器的尺寸被设计成匹配衬底，并且包括围绕其周边的密封件，该密封件抵靠衬底的周边，并且与衬底的背面形成封闭的加热室。 与加热器主体绝热的加热元件，优选地具有热解石墨，位于加热器室中以从背面加热基板。 围绕其内周边具有密封圈的夹紧环与加热器本体配合，以将基板密封到加热器主体。 加热器优选地与基底以及食堂室和绝缘体的壁间隔开，以通过将热量传递通过超临界流体来提供均匀的加热。 本发明还涉及加热衬底的方法，其中超临界流体反应器在加热器室被密封或隔离之前被加压以保持衬底上的均匀压力。

公开(公告)号：US06644966B1

公开(公告)日：2003-11-11

申请号：US10191243

申请日：2002-07-03

Applicant: Chuan Chin Chiang

Inventor： Chuan Chin Chiang

IPC: F27D500

CPC classification number: F27D5/0012

Abstract: A carriage includes two or more beams each having a number of orifices for receiving a number of rods and for allowing the rods to be retained between the beams for supporting the objects to be heated by the kilns or furnaces. The beams each includes two end bulges each having a groove for receiving two ends of two bars, and for forming a stable supporting structure. The beams each includes a lower cavity and an upper projection for engaging with each other and for allowing the beams and the carriages to be superposed or piled with each other.

Abstract translation: 托架包括两个或更多个梁，每个梁具有用于接收多个杆的多个孔，并且用于允许杆保持在梁之间，用于支撑由窑炉或炉子加热的物体。 梁各自包括两个端部凸起，每个端部凸起具有用于接收两个杆的两端的凹槽，并且用于形成稳定的支撑结构。 梁各包括下腔和上凸起，用于彼此接合并允许梁和滑架彼此重叠或堆叠。

公开(公告)号：US06644965B2

公开(公告)日：2003-11-11

申请号：US10061411

申请日：2002-02-04

Applicant: Jun Ookura ,  Koji Harada

Inventor： Jun Ookura ,  Koji Harada

IPC: F27D500

CPC classification number: H01L21/67248

Abstract: Target processing temperatures for a wafer and offset values are tabulated and stored in a temperature controller in advance. When a target processing temperature is changed, a hot plate temperature corresponding to the target processing temperature for the wafer is calculated based on the offset value in the table. Based on the calculated value, a heater controller controls a heater to change the hot plate temperature. Thereby, in a substrate heat processing apparatus for performing heat processing at different temperatures, an offset value corresponding to each temperature is automatically changed, whereby the substrate can be heated at an appropriate temperature.