公开(公告)号：US20180261666A1

公开(公告)日：2018-09-13

申请号：US15894811

申请日：2018-02-12

Applicant: MaxPower Semiconductor Inc.

Inventor： Jun Zeng ,  Mohamed N. Darwish ,  Wenfang Du ,  Richard A. Blanchard ,  Kui Pu ,  Shih-Tzung Su

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78

CPC classification number: H01L29/0634 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/7397 ,  H01L29/7813

Abstract: In one embodiment, a power MOSFET or IGBT cell includes an N-type drift region grown over the substrate. An N-type layer, having a higher dopant concentration than the drift region, is then formed over the drift region. A P-well is formed over the N-type layer, and an N+ source/emitter region is formed in the P-well. A gate is formed over the P-well's lateral channel and has a vertical extension into a trench. A positive gate voltage inverts the lateral channel and increases the vertical conduction in the N-type layer along the sidewalls of the trench to reduce on-resistance. A vertical shield field plate is also in the trench and may be connected to the gate. The field plate laterally depletes the N-type layer when the device is off to increase the breakdown voltage. Floating P-islands in the N-type drift region increase breakdown voltage and reduce the saturation current.

公开(公告)号：US10157983B2

公开(公告)日：2018-12-18

申请号：US15894811

申请日：2018-02-12

Applicant: MaxPower Semiconductor Inc.

Inventor： Jun Zeng ,  Mohamed N. Darwish ,  Wenfang Du ,  Richard A. Blanchard ,  Kui Pu ,  Shih-Tzung Su

IPC: H01L29/02 ,  H01L29/06 ,  H01L29/10 ,  H01L29/78 ,  H01L29/423 ,  H01L29/739 ,  H01L29/40

Abstract: In one embodiment, a power MOSFET or IGBT cell includes an N-type drift region grown over the substrate. An N-type layer, having a higher dopant concentration than the drift region, is then formed over the drift region. A P-well is formed over the N-type layer, and an N+ source/emitter region is formed in the P-well. A gate is formed over the P-well's lateral channel and has a vertical extension into a trench. A positive gate voltage inverts the lateral channel and increases the vertical conduction in the N-type layer along the sidewalls of the trench to reduce on-resistance. A vertical shield field plate is also in the trench and may be connected to the gate. The field plate laterally depletes the N-type layer when the device is off to increase the breakdown voltage. Floating P-islands in the N-type drift region increase breakdown voltage and reduce the saturation current.