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公开(公告)号：US10593813B2
公开(公告)日：2020-03-17
申请号：US16016510
申请日：2018-06-22
IPC分类号： H01L29/06 , H01L29/861 , H01L29/40 , H01L29/66 , H01L21/265 , H01L29/04 , H01L29/16 , H01L29/417
摘要： A new semiconductor rectifier structure. In general, a MOS-transistor-like structure is located above a JFET-like deeper structure. The present application teaches ways to combine and optimize these two structures in a merged device so that the resulting combined structure achieves both a low forward voltage and a high reverse breakdown voltage in a relatively small area. In one class of innovative implementations, an insulated (or partially insulated) trench is used to define a vertical channel in a body region along the sidewall of a trench, so that majority carriers from a “source” region (typically n+) can flow through the channel. An added “pocket” diffusion, of the same conductivity type as the body region (p-type in this example), provides an intermediate region around the bottom of the trench. This intermediate diffusion, and an additional deep region of the same conductivity type, define a deep JFET-like device which is in series with the MOS channel portion of the diode. This advantageously permits the MOS channel portion to be reasonably short, and to have a reasonably low threshold voltage, since the high-voltage withstand characteristics are defined by the deep JFET-like device.
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公开(公告)号：US10186573B2
公开(公告)日：2019-01-22
申请号：US15202227
申请日：2016-07-05
IPC分类号： H01L29/06 , H01L29/10 , H01L27/02 , H01L27/06 , H01L29/739 , H01L29/78 , H01L29/66 , H01L29/40 , H01L29/417 , H01L29/08 , H01L27/07
摘要： In one embodiment, a RESURF structure between a source and a drain in a lateral MOSFET is formed in a trench having a flat bottom surface and angled sidewalls toward the source. Alternating P and N-type layers are epitaxially grown in the trench, and their charges balanced to achieve a high breakdown voltage. In the area of the source, the ends of the P and N-layers angle upward to the surface under the lateral gate and contact the body region. Thus, for an N-channel MOSFET, a positive gate voltage above the threshold forms a channel between the source and the N-layers in the RESURF structure as well as creates an inversion of the ends of the P-layers near the surface for low on-resistance. In another embodiment, the RESURF structure is vertically corrugated by being formed around trenches, thus extending the length of the RESURF structure for a higher breakdown voltage.
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公开(公告)号：US10014365B2
公开(公告)日：2018-07-03
申请号：US14445942
申请日：2014-07-29
IPC分类号： H01L29/78 , H01L29/06 , H01L29/40 , H01L29/861 , H01L29/423 , H01L29/66 , H01L29/10 , H01L29/08 , H01L21/265
CPC分类号： H01L29/0611 , H01L21/26586 , H01L29/063 , H01L29/0634 , H01L29/0661 , H01L29/0873 , H01L29/0882 , H01L29/1095 , H01L29/402 , H01L29/407 , H01L29/408 , H01L29/4236 , H01L29/66348 , H01L29/66734 , H01L29/7802 , H01L29/7811 , H01L29/7813 , H01L29/7827 , H01L29/8611
摘要： Power devices using refilled trenches with permanent charge at or near their sidewalls. These trenches extend vertically into a drift region.
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公开(公告)号：US09859400B2
公开(公告)日：2018-01-02
申请号：US14677511
申请日：2015-04-02
IPC分类号： H01L27/088 , H01L29/66 , H01L29/417 , H01L29/739 , H01L29/78 , H01L29/40 , H01L29/10 , H01L21/265 , H01L21/8234 , H01L29/16 , H01L29/36 , H01L29/423 , H01L29/06 , H01L29/08
CPC分类号： H01L29/66734 , H01L21/26506 , H01L21/823412 , H01L21/823437 , H01L21/823475 , H01L21/823487 , H01L27/088 , H01L29/0623 , H01L29/0634 , H01L29/0847 , H01L29/0878 , H01L29/1033 , H01L29/1095 , H01L29/16 , H01L29/36 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66727 , H01L29/7395 , H01L29/7803 , H01L29/7813 , H01L29/7827 , H01L29/7831 , H01L29/7835
摘要： Methods and systems for power semiconductor devices integrating multiple trench transistors on a single chip. Multiple power transistors (or active regions) are paralleled, but one transistor has a lower threshold voltage. This reduces the voltage drop when the transistor is forward-biased. In an alternative embodiment, the power device with lower threshold voltage is simply connected as a depletion diode, to thereby shunt the body diodes of the active transistors, without affecting turn-on and ON-state behavior.
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公开(公告)号：US09842917B2
公开(公告)日：2017-12-12
申请号：US15012642
申请日：2016-02-01
IPC分类号： H01L29/40 , H01L29/739 , H01L29/06 , H01L29/10 , H01L29/66 , H01L29/78 , H01L29/167 , H01L21/265 , H01L29/08 , H01L29/417 , H01L29/423
CPC分类号： H01L29/7393 , H01L21/26586 , H01L29/0634 , H01L29/0873 , H01L29/0878 , H01L29/1095 , H01L29/167 , H01L29/402 , H01L29/407 , H01L29/408 , H01L29/41766 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7397 , H01L29/7802 , H01L29/7813 , H01L29/7816
摘要： Power semiconductor devices, and related methods, where majority carrier flow is divided into paralleled flows through two drift regions of opposite conductivity types.
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6.发明申请POWER DEVICE HAVING A POLYSILICON-FILLED TRENCH WITH A TAPERED OXIDE THICKNESS 有权具有氧化锌厚度的多晶硅填充的电源装置公开(公告)号：US20170069727A1
公开(公告)日：2017-03-09
申请号：US15247510
申请日：2016-08-25
CPC分类号： H01L29/66068 , H01L21/047 , H01L21/26586 , H01L29/0623 , H01L29/0634 , H01L29/0878 , H01L29/1037 , H01L29/1095 , H01L29/16 , H01L29/1608 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/66734 , H01L29/7813
摘要： In one embodiment, a power MOSFET vertically conducts current. A bottom electrode may be connected to a positive voltage, and a top electrode may be connected to a low voltage, such as a load connected to ground. A gate and/or a field plate, such as polysilicon, is within a trench. The trench has a tapered oxide layer insulating the polysilicon from the silicon walls. The oxide is much thicker near the bottom of the trench than near the top to increase the breakdown voltage. The tapered oxide is formed by implanting nitrogen into the trench walls to form a tapered nitrogen dopant concentration. This forms a tapered silicon nitride layer after an anneal. The tapered silicon nitride variably inhibits oxide growth in a subsequent oxidation step.
摘要翻译： 在一个实施例中，功率MOSFET垂直传导电流。 底部电极可以连接到正电压，并且顶部电极可以连接到低电压，例如连接到地的负载。 诸如多晶硅的栅极和/或场板在沟槽内。 沟槽具有使多晶硅与硅壁绝缘的锥形氧化物层。 在沟槽底部附近的氧化物比靠近顶部更厚，以增加击穿电压。 通过将氮注入到沟槽壁中以形成锥形氮掺杂剂浓度来形成锥形氧化物。 这在退火之后形成锥形氮化硅层。 锥形氮化硅在随后的氧化步骤中可变地抑制氧化物生长。
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公开(公告)号：US20160293743A1
公开(公告)日：2016-10-06
申请号：US15012642
申请日：2016-02-01
IPC分类号： H01L29/739 , H01L29/167 , H01L29/10 , H01L29/78
CPC分类号： H01L29/7393 , H01L21/26586 , H01L29/0634 , H01L29/0873 , H01L29/0878 , H01L29/1095 , H01L29/167 , H01L29/402 , H01L29/407 , H01L29/408 , H01L29/41766 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7397 , H01L29/7802 , H01L29/7813 , H01L29/7816
摘要： Power semiconductor devices, and related methods, where majority carrier flow is divided into paralleled flows through two drift regions of opposite conductivity types.
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公开(公告)号：US20150108565A1
公开(公告)日：2015-04-23
申请号：US14523492
申请日：2014-10-24
CPC分类号： H01L29/7393 , H01L21/26586 , H01L29/0634 , H01L29/0873 , H01L29/0878 , H01L29/1095 , H01L29/167 , H01L29/402 , H01L29/407 , H01L29/408 , H01L29/41766 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7397 , H01L29/7802 , H01L29/7813 , H01L29/7816
摘要： Power semiconductor devices, and related methods, where majority carrier flow is divided into paralleled flows through two drift regions of opposite conductivity types.
摘要翻译： 功率半导体器件和相关方法，其中多数载流子流被分成平行的流经两个相反导电类型的漂移区域。
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9.发明申请TRENCH TRANSISTORS AND METHODS WITH LOW-VOLTAGE-DROP SHUNT TO BODY DIODE 有权具有低电压跳变分流到二极管的TRENCH晶体管和方法公开(公告)号：US20140042535A1
公开(公告)日：2014-02-13
申请号：US13758689
申请日：2013-02-04
IPC分类号： H01L27/088 , H01L29/78
CPC分类号： H01L29/66734 , H01L21/26506 , H01L21/823412 , H01L21/823437 , H01L21/823475 , H01L21/823487 , H01L27/088 , H01L29/0623 , H01L29/0634 , H01L29/0847 , H01L29/0878 , H01L29/1033 , H01L29/1095 , H01L29/16 , H01L29/36 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66727 , H01L29/7395 , H01L29/7803 , H01L29/7813 , H01L29/7827 , H01L29/7831 , H01L29/7835
摘要： Methods and systems for power semiconductor devices integrating multiple trench transistors on a single chip. Multiple power transistors (or active regions) are paralleled, but one transistor has a lower threshold voltage. This reduces the voltage drop when the transistor is forward-biased. In an alternative embodiment, the power device with lower threshold voltage is simply connected as a depletion diode, to thereby shunt the body diodes of the active transistors, without affecting turn-on and ON-state behavior.
摘要翻译： 用于在单个芯片上集成多个沟槽晶体管的功率半导体器件的方法和系统。 多个功率晶体管（或有源区）并联，但一个晶体管具有较低的阈值电压。 当晶体管正向偏置时，这降低了电压降。 在替代实施例中，具有较低阈值电压的功率器件简单地连接为耗尽二极管，从而分流有源晶体管的体二极管，而不会影响导通和导通状态。
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公开(公告)号：US11316021B2
公开(公告)日：2022-04-26
申请号：US16991935
申请日：2020-08-12
IPC分类号： H01L29/40 , H01L29/423 , H01L29/66 , H01L29/739 , H01L29/78 , H01L29/06
摘要： A vertical transistor structure in which a recessed field plate trench surrounds multiple adjacent gate electrodes. Thus the specific on-state conductance is increased, since the ratio of recessed field plate area to channel area is reduced. Various versions use two, three, or more distinct gate electrodes within the interior of a single RFP or RSFP trench's layout.
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