公开(公告)号：US09153666B1

公开(公告)日：2015-10-06

申请号：US14269312

申请日：2014-05-05

Applicant: Maxim Integrated Products, Inc.

Inventor： Farshid Iravani ,  Timothy K. McGuire

IPC: H01L21/337 ,  H01L29/66

CPC classification number: H01L29/66681 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/7816 ,  H01L29/7824

Abstract: Semiconductor devices, such as LDMOS devices, are described that include a plurality of trench regions formed in an extended drain region of the devices. In one or more implementations, the semiconductor devices include a substrate having an extended drain region, a source region, and a drain region, all of the first conductivity type, formed proximate to a surface of the substrate. A gate is positioned over the surface and between the source region and the drain region. The gate is configured to receive a voltage so that a conduction region may be formed at least partially below the gate to allow charge carriers (e.g., majority carriers) to travel between the source region and the drain region. A plurality of trench regions are formed within the extended drain region that are configured to increase resistivity within the extended drain region when charge carriers travel between the source region and the drain region.

Abstract translation: 描述了诸如LDMOS器件的半导体器件，其包括形成在器件的延伸漏极区域中的多个沟槽区域。 在一个或多个实施方案中，半导体器件包括具有延伸的漏极区，源极区和漏极区的衬底，所有的第一导电类型都在衬底的表面附近形成。 栅极位于表面上并且在源极区域和漏极区域之间。 栅极被配置为接收电压，使得可以至少部分地在栅极下形成导电区域，以允许电荷载流子（例如，多数载流子）在源极区域和漏极区域之间行进。 在扩展漏极区域内形成多个沟槽区域，其被配置为当电荷载流子在源极区域和漏极区域之间行进时，增加扩展漏极区域内的电阻率。

公开(公告)号：US09534955B2

公开(公告)日：2017-01-03

申请号：US14671063

申请日：2015-03-27

Applicant: Maxim Integrated Products, Inc.

Inventor： Christopher F. Edwards ,  Dan G. Allen ,  Cheng-Wei Pei ,  Timothy K. McGuire ,  Joy T. Jones ,  Nicole D. Kerness

IPC: G01T1/24 ,  G01J3/28 ,  G01J3/36 ,  G01J1/04 ,  G01J1/42

CPC classification number: G01J3/2803 ,  G01J1/0488 ,  G01J1/4228 ,  G01J1/429 ,  G01J3/36 ,  G01J2001/4266 ,  G01J2003/2806

Abstract: The present disclosure describes an ultraviolet (UV) sensor configured to detect a target UV spectrum (e.g., UVB spectrum). The UV sensor includes a first photodiode with a first UV spectral response and a second photodiode with a second UV spectral response. A filter layer having a graded spectral response is formed over the second photodiode, and the second UV spectral response is affected by a controlled parameter (e.g., thickness) of the filter layer. The UV sensor further includes a subtraction circuit coupled with the first photodiode and the second photodiode. The subtraction circuit is configured to provide a differential response based on a difference between the first UV spectral response and the second UV spectral response. The controlled parameter of the filter layer can be selected such that the differential response provides a detected spectral response of the target spectrum.

Abstract translation: 本公开描述了配置成检测目标UV光谱（例如UVB光谱）的紫外（UV）传感器。 UV传感器包括具有第一UV光谱响应的第一光电二极管和具有第二UV光谱响应的第二光电二极管。 在第二光电二极管上形成具有梯度光谱响应的滤光层，并且第二UV光谱响应受过滤层的受控参数（例如，厚度）的影响。 UV传感器还包括与第一光电二极管和第二光电二极管耦合的减法电路。 减法电路被配置为基于第一UV光谱响应和第二UV光谱响应之间的差异提供差分响应。 可以选择滤波层的受控参数，使得差分响应提供检测到的目标光谱的光谱响应。

公开(公告)号：US20160131525A1

公开(公告)日：2016-05-12

申请号：US14671063

申请日：2015-03-27

Applicant: Maxim Integrated Products, Inc.

Inventor： Christopher F. Edwards ,  Dan G. Allen ,  Cheng-Wei Pei ,  Timothy K. McGuire ,  Joy T. Jones ,  Nicole D. Kerness

IPC: G01J3/28 ,  G01J3/36

CPC classification number: G01J3/2803 ,  G01J1/0488 ,  G01J1/4228 ,  G01J1/429 ,  G01J3/36 ,  G01J2001/4266 ,  G01J2003/2806

Abstract: The present disclosure describes an ultraviolet (UV) sensor configured to detect a target UV spectrum (e.g., UVB spectrum). The UV sensor includes a first photodiode with a first UV spectral response and a second photodiode with a second UV spectral response. A filter layer having a graded spectral response is formed over the second photodiode, and the second UV spectral response is affected by a controlled parameter (e.g., thickness) of the filter layer. The UV sensor further includes a subtraction circuit coupled with the first photodiode and the second photodiode. The subtraction circuit is configured to provide a differential response based on a difference between the first UV spectral response and the second UV spectral response. The controlled parameter of the filter layer can be selected such that the differential response provides a detected spectral response of the target spectrum.

Abstract translation: 本公开描述了配置成检测目标UV光谱（例如UVB光谱）的紫外（UV）传感器。 UV传感器包括具有第一UV光谱响应的第一光电二极管和具有第二UV光谱响应的第二光电二极管。 在第二光电二极管上形成具有梯度光谱响应的滤光层，并且第二UV光谱响应受过滤层的受控参数（例如，厚度）的影响。 UV传感器还包括与第一光电二极管和第二光电二极管耦合的减法电路。 减法电路被配置为基于第一UV光谱响应和第二UV光谱响应之间的差异提供差分响应。 可以选择滤波层的受控参数，使得差分响应提供检测到的目标光谱的光谱响应。