Abstract:
The invention provides a body-contact metal-oxide-semiconductor field effect transistor (MOSFET) device. The body-contact MOSFET device includes a substrate. An active region is disposed on the substrate. A gate strip is extended along a first direction disposed on a first portion of the active region. A source doped region and a drain doped region are disposed on a second portion and a third portion of the active region, adjacent to opposite sides of the gate strip. The opposite sides of the gate strip are extended along the first direction. A body-contact doped region is disposed on a fourth portion of the active region. The body-contact doped region is separated from the gate strip by a fifth portion of the active region. The fifth portion is not covered by any silicide features.
Abstract:
Aspects of the disclosure provide methods and apparatuses for generating an internal reset signal that is synchronous to a clock signal. In some embodiments, an apparatus includes a clock switch circuit and a plurality of serially coupled D flip-flops (DFFs). The clock switch circuit receiving the clock signal can output the clock signal in an on state and block the clock signal in an off state. The plurality of serially coupled DFFs are coupled to the clock switch circuit and driven by the clock signal. If an external reset signal is enabled, the plurality of serially coupled DFFs can enable the internal reset signal. If the external reset signal is disabled, after a predefined number of clock signal cycles, the plurality of serially coupled DFFs can disable the internal reset signal.