摘要:
A probe card 8 for testing a semiconductor integrated circuit is provided with a plurality of probes for inputting/outputting an electric signal for verifying the operation of a semiconductor integrated circuit 6 to/from bonding pads 7 of the semiconductor integrated circuit. The probes 9 are formed by depositing a conductive film 11 on a surface of a plurality of convex portions formed on a surface of an insulating substrate 10.
摘要:
A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 9t≦r≦35t, where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 μm to 30 μm and larger than that of the second curved surface. The test probe may be manufactured by a method comprising the steps of roughing the tip portion of the curved surface by abrasing by means of electrolyte abrasion or abrasing particles to form a symmetrical spherical curved surface, and finishing the tip portion by sliding it on an abrasive member comprising an elastically deformable thick film fixed to a substrate and having abrasive particles therein or thereon directly or through a metallic film.
摘要翻译:一种半导体器件测试探针,其具有尖端部分,用于抵抗集成半导体器件的电极焊盘,以建立与电极焊盘的电接触,以测试半导体器件的功能。 球形尖端部分具有由9t <= r <= 35t表示的曲率半径r,其中r是球面的曲率半径,t是电极焊盘的厚度。 尖端部分可以具有基本上位于探头滑动方向上的第一弯曲表面,当探头被推靠在电极垫上并相对于电极焊盘滑动时,第一弯曲表面与第一弯曲表面相对的第二弯曲表面。 第一曲面的曲率半径为7μm〜30μm,大于第二曲面的曲率半径。 测试探针可以通过以下方法制造,该方法包括以下步骤:通过利用电解质磨损或磨损颗粒进行磨损来粗糙化弯曲表面的尖端部分以形成对称的球形曲面,并且通过将其磨削在磨料上来完成尖端部分 其包括固定到基底的可弹性变形的厚膜,其上直接或通过金属膜在其中或其上具有磨料颗粒。
摘要:
A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 9t≦r≦35t, where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 μm to 30 μm and larger than that of the second curved surface. The test probe may be manufactured by a method comprising the steps of roughing the tip portion of the curved surface by abrasing by means of electrolyte abrasion or abrasing particles to form a symmetrical spherical curved surface, and finishing the tip portion by sliding it on an abrasive member comprising an elastically deformable thick film fixed to a substrate and having abrasive particles therein or thereon directly or through a metallic film.
摘要翻译:一种半导体器件测试探针,其具有尖端部分,用于抵抗集成半导体器件的电极焊盘,以建立与电极焊盘的电接触,以测试半导体器件的功能。 球形尖端部分具有由9t <= r <= 35t表示的曲率半径r,其中r是球面的曲率半径,t是电极焊盘的厚度。 尖端部分可以具有基本上位于探头滑动方向上的第一弯曲表面,当探头被推靠在电极垫上并相对于电极焊盘滑动时,第一弯曲表面与第一弯曲表面相对的第二弯曲表面。 第一曲面的曲率半径为7μm〜30μm,大于第二曲面的曲率半径。 测试探针可以通过以下方法制造,该方法包括以下步骤:通过利用电解质磨损或磨损颗粒进行磨损来粗糙化弯曲表面的尖端部分以形成对称的球形曲面,并且通过将其磨削在磨料上来完成尖端部分 其包括固定到基底的可弹性变形的厚膜,其上直接或通过金属膜在其中或其上具有磨料颗粒。
摘要:
A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 9t≦r≦35t where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 μm to 30 μm and larger than that of the second curved surface. The test probe may be manufactured by a method comprising the steps of roughing the tip portion of the curved surface by abrasing by means of electrolyte abrasion or abrasing particles to form a symmetrical spherical curved surface, and finishing the tip portion by sliding it on an abrasive member comprising an elastically deformable thick film fixed to a substrate and having abrasive particles therein or thereon directly or through a metallic film.
摘要翻译:一种半导体器件测试探针,其具有尖端部分,用于抵抗集成半导体器件的电极焊盘,以建立与电极焊盘的电接触,以测试半导体器件的功能。 球形尖端部分具有由9t <= r <= 35t表示的曲率半径r,其中r是球面的曲率半径,t是电极焊盘的厚度。 尖端部分可以具有基本上位于探头滑动方向上的第一弯曲表面,当探头被推靠在电极垫上并相对于电极焊盘滑动时,第一弯曲表面与第一弯曲表面相对的第二弯曲表面。 第一曲面的曲率半径为7μm〜30μm,大于第二曲面的曲率半径。 测试探针可以通过以下方法制造,该方法包括以下步骤:通过利用电解质磨损或磨损颗粒进行磨损来粗糙化弯曲表面的尖端部分以形成对称的球形曲面,并且通过将其磨削在磨料上来完成尖端部分 其包括固定到基底的可弹性变形的厚膜,其上直接或通过金属膜在其中或其上具有磨料颗粒。
摘要:
A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 8t≦r≦23t, where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 &mgr;m to 30 &mgr;m and larger than that of the second curved surface. The test probe may be manufactured by a method comprising the steps of roughing the tip portion of the curved surface by abrasing by means of electrolyte abrasion or abrasing particles to form a symmetrical spherical curved surface, and finishing the tip portion by sliding it on an abrasive member comprising an elastically deformable thick film fixed to a substrate and having abrasive particles therein or thereon directly or through a metallic film.
摘要翻译:一种半导体器件测试探针,其具有尖端部分,用于抵抗集成半导体器件的电极焊盘,以建立与电极焊盘的电接触,以测试半导体器件的功能。 球形尖端部分具有由8t <= r <= 23t表示的曲率半径r,其中r是球面的曲率半径,t是电极焊盘的厚度。 尖端部分可以具有基本上位于探头滑动方向上的第一弯曲表面,当探头被推靠在电极垫上并相对于电极焊盘滑动时,第一弯曲表面与第一弯曲表面相对的第二弯曲表面。 第一曲面的曲率半径为7μm〜30μm,大于第二曲面的曲率半径。 测试探针可以通过以下方法制造,该方法包括以下步骤:通过利用电解质磨损或磨损颗粒进行磨损来粗糙化弯曲表面的尖端部分以形成对称的球形曲面,并且通过将其磨削在磨料上来完成尖端部分 其包括固定到基底上的可弹性变形的厚膜,其中直接或通过金属膜在其中或通过金属膜上具有研磨颗粒。
摘要:
A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 9t≦r≦35t where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 μm to 30 μm and larger than that of the second curved surface. The test probe may be manufactured by a method comprising the steps of roughing the tip portion of the curved surface by abrasing by means of electrolyte abrasion or abrasing particles to form a symmetrical spherical curved surface, and finishing the tip portion by sliding it on an abrasive member comprising an elastically deformable thick film fixed to a substrate and having abrasive particles therein or thereon directly or through a metallic film.
摘要翻译:一种半导体器件测试探针,其具有尖端部分,用于抵抗集成半导体器件的电极焊盘,以建立与电极焊盘的电接触,以测试半导体器件的功能。 球形尖端部分具有由9t <= r <= 35t表示的曲率半径r,其中r是球面的曲率半径,t是电极焊盘的厚度。 尖端部分可以具有基本上位于探头滑动方向上的第一弯曲表面,当探头被推靠在电极垫上并相对于电极焊盘滑动时,第一弯曲表面与第一弯曲表面相对的第二弯曲表面。 第一曲面的曲率半径为7μm〜30μm,大于第二曲面的曲率半径。 测试探针可以通过以下方法制造,该方法包括以下步骤:通过利用电解质磨损或磨损颗粒进行磨损来粗糙化弯曲表面的尖端部分以形成对称的球形曲面,并且通过将其磨削在磨料上来完成尖端部分 其包括固定到基底的可弹性变形的厚膜,其上直接或通过金属膜在其中或其上具有磨料颗粒。
摘要:
The present invention provides a member for removing foreign matter adhering to the spherical tip portion of a test probe which is put into contact with the bonding pads of a semiconductor chip to test the action of the semiconductor chip. The member includes four essential layers of a base plate, a first elastic member on the base plate and flexibly deformable upon contact of the probe, specifically, a predetermined Young's modulus, a second elastic member on the first elastic member and having a tensile strength and a thickness responding to contact stress produced by the contact of the probe, and an abrasive layer on the second elastic member and made of hard particles and a binding material in a volume ratio providing a smooth sliding action of the probe and producing a high abrasive efficiency to any adhering foreign matter. The removing member can smoothly slide the probe to effectively remove the foreign matter adhering to the probe tip.
摘要:
A test probe for semiconductor devices, the test probe having a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between the tip portion and the pad for testing the operation of the semiconductor device, wherein the probe is formed to have a tip shape with an angle of not less than 15 degrees formed at the surface of the pad between a tangential line with respect to a tip face of the probe and the pad surface when the probe is pressed against the pad, the tip shape of the probe having a spherical surface meeting the relationship of: &thgr;=cos−1(1−t/R)≧15° where the radius of curvature of the spherical surface is R, the thickness of the pad is t, and the angle formed at the pad surface between the tangential line with respect to the probe tip face and the pad surface when the probe is pressed against the pad is &thgr;, the probe have a flat portion at an end of the tip portion. Accordingly, a contact surface can be established between the probe trip and the pad with a sufficient degree of electrical continuity, and when the the probe level is adjusted in the probing, a time required for positioning the probe prior to the start of measurement is cut down and variation in measurement are reduced.
摘要:
Multiple probe needles are arranged to be brought into contact with one electrode pad with a probe card, the multiple probe needles are connected in parallel with the same potential, and configured so that the amount of current flowing through the probe needles is at least halved, thereby decreasing generation of heat from Joule heat, and preventing melting of aluminum of which the electrode pads are composed. Consequently, a probe card can be provided wherein adhesion of molten material to the probe needles is suppressed, and wherein increased contact resistance due to oxidization of the material which has melted and adhered is prevented.
摘要:
A test probe for semiconductor devices, the test probe having a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between the tip portion and the pad for testing the operation of the semiconductor device, wherein the probe is formed to have a tip shape with an angle of not less than 15 degrees formed at the surface of the pad between a tangential line with respect to a tip face of the probe and the pad surface when the probe is pressed against the pad, the tip shape of the probe having a spherical surface meeting the relationship of: θ=cos−1(1−t/R)≧15° where the radius of curvature of the spherical surface is R, the thickness of the pad is t, and the angle formed at the pad surface between the tangential line with respect to the probe tip face and the pad surface when the probe is pressed against the pad is θ, the probe have a flat portion at an end of the tip portion. Accordingly, a contact surface can be established between the probe trip and the pad with a sufficient degree of electrical continuity, and when the the probe level is adjusted in the probing, a time required for positioning the probe prior to the start of measurement is cut down and variation in measurement are reduced.