Fabrication of Phase-Change Resistor Using a Backend Process
    1.
    发明申请
    Fabrication of Phase-Change Resistor Using a Backend Process 审中-公开
    使用后端工艺制造相变电阻器

    公开(公告)号:US20080277642A1

    公开(公告)日:2008-11-13

    申请号:US11814800

    申请日:2006-01-19

    IPC分类号: H01L45/00

    摘要: A phase change resistor device has a phase change material (PCM) for which the phase transition occurs inside the PCM and not at the interface with a contact electrode. For ease of manufacturing the PCM is an elongate line structure (210, 215) surrounded by the conductive electrode portions (200, 240) at its lateral sides, and is formed in a CMOS backend process. An alternative is to form the device coupled directly to other circuit parts without the electrodes. In each case, there is a line of PCM which has a constant diameter or cross section, formed with reduced dimensions by using a spacer as a hard mask. The first contact electrode and the second contact electrode are electrically connected by a “one dimensional” layer of the PCM. The contact resistance between the one-dimensional layer of PCM and the first contact electrode at the second contact electrode is lower than the resistance of a central or intervening portion of the line.

    摘要翻译: 相变电阻器件具有相变材料(PCM),在该相变材料(PCM)中,相变发生在PCM内部,而不在与接触电极的界面处。 为了便于制造,PCM是由导电电极部分(200,240)在其侧面环绕的细长线结构(210,215),并且以CMOS后端工艺形成。 一种替代方案是形成直接连接到没有电极的其它电路部件的装置。 在每种情况下,存在具有恒定直径或横截面的PCM线,其通过使用间隔件作为硬掩模以减小的尺寸形成。 第一接触电极和第二接触电极通过PCM的“一维”层电连接。 PCM的一维层和第二接触电极处的第一接触电极之间的接触电阻低于线的中心部分或中间部分的电阻。