Method for forming a conductive layer of material on an integrated
circuit substrate
    1.
    发明授权
    Method for forming a conductive layer of material on an integrated circuit substrate 失效
    在集成电路基板上形成材料的导电层的方法

    公开(公告)号:US5556506A

    公开(公告)日:1996-09-17

    申请号:US573981

    申请日:1995-12-18

    摘要: In one embodiment a plasma ignitor (10) having a first dielectric housing (18), that encases a first portion of a first conductive lead (14) and a first portion of a second conductive lead (16), and end cap (30), that locks its filament (31) into position, is used to initiate a plasma within an etch chamber (64). The plasma is used to etch an integrated circuit substrate (62) and to form an etched surface (78). A conductive layer of material (80) is then deposited on the etched surface (78). The first dielectric housing (18) keeps the first portion of the first conductive lead (14) and the first portion of the second conductive lead (16) from shorting to one another during processing, and the end cap (30) prevents the filament (31) from falling off during processing. Thus, the present invention allows contact resistance to be repeatably minimized.

    摘要翻译: 在一个实施例中,具有包含第一导电引线(14)的第一部分和第二导电引线(16)的第一部分的第一绝缘壳体(18)和端盖(30)的等离子体点火器(10) ,其将其细丝(31)锁定到位,用于在蚀刻室(64)内启动等离子体。 等离子体用于蚀刻集成电路基板(62)并形成蚀刻表面(78)。 然后将材料(80)的导电层沉积在蚀刻表面(78)上。 第一绝缘壳体(18)在处理期间保持第一导电引线(14)的第一部分和第二导电引线(16)的第一部分彼此短路,并且端盖(30)防止灯丝 31)在加工过程中脱落。 因此,本发明允许接触电阻重复地最小化。