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1.发明申请Reducing dark current of photoconductor using heterojunction that maintains high x-ray sensitivity 审中-公开使用保持高X射线灵敏度的异质结降低光电导体的暗电流公开(公告)号：US20050056829A1
公开(公告)日：2005-03-17
申请号：US10665298
申请日：2003-09-17
申请人： Michael Green , Steve Bandy , George Zentai , Larry Partain
发明人： Michael Green , Steve Bandy , George Zentai , Larry Partain
IPC分类号： H01L20060101 , H01L29/08 , H01L31/115
CPC分类号： H01L31/115
摘要： A photodetector having a heterojunction structure is described that may operate to reduce contact corrosion and/or reduce dark current while maintaining high x-ray sensitivity. The heterojunction structure may be formed by a plurality of halide semiconductor materials.
摘要翻译： 描述了具有异质结结构的光电检测器，其可以在保持高的x射线灵敏度的同时降低接触腐蚀和/或降低暗电流。 异质结结构可以由多个卤化物半导体材料形成。
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公开(公告)号：US20050092925A1
公开(公告)日：2005-05-05
申请号：US10701724
申请日：2003-11-04
申请人： George Zentai , Larry Partain , Raisa Pavlyunchkova , Kanai Shah , Paul Bennett
发明人： George Zentai , Larry Partain , Raisa Pavlyunchkova , Kanai Shah , Paul Bennett
IPC分类号： G01J5/20 , H01L21/00 , H01L21/36 , H01L21/368 , H01L27/14 , H01L31/00 , H01L31/115 , H01L31/18
CPC分类号： H01L31/18 , H01L21/02521 , H01L21/02601 , H01L21/02628 , H01L31/115
摘要： A method of coating the joined crystals within a semiconductor conversion layer to reduce the dark current without compromising the sensitivity of the conversion layer is presented. A semiconductor conversion layer comprising a plurality of joined crystals and permeated by a polymer material and having microscopic voids is also presented.
摘要翻译： 提出了在半导体转换层内涂覆结合的晶体以减少暗电流而不损害转换层的灵敏度的方法。 还提供了包含多个接合晶体并且被聚合物材料渗透并具有微小空隙的半导体转换层。
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公开(公告)号：US20070023853A1
公开(公告)日：2007-02-01
申请号：US11193162
申请日：2005-07-29
申请人： Larry Partain , George Zentai
发明人： Larry Partain , George Zentai
IPC分类号： H01L31/00
CPC分类号： G01T1/24
摘要： A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.
摘要翻译： 用于检测兆伏特（MV）辐射的光电检测器包括半导体转换层，其具有与第一表面相对布置的第一表面和第二表面，耦合到第一表面的第一电极，耦合到第二表面的第二电极和低密度 衬底，包括耦合到与半导体转换层相对的第二电极的检测器阵列。 光电检测器包括足够厚度的高密度材料以从入射的MV辐射产生足够数量的光电子，使得光电子能够被转换层接收并转换成足够的再充电载体，以便由检测器阵列检测。
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公开(公告)号：US20060278832A1
公开(公告)日：2006-12-14
申请号：US11153017
申请日：2005-06-14
申请人： George Zentai , Larry Partain
发明人： George Zentai , Larry Partain
IPC分类号： G01T1/24
CPC分类号： G01T1/24 , H01L27/14634 , H01L27/14676 , H01L27/1469
摘要： An image acquisition device 30 is provided. The image acquisition device 30 comprises a photoconductor 48 adapted to convert an electromagnetic radiation into electrical signals, a first layer 36 or 37 coupled to the photoconductor 48. The interconnecting layer 36 or 37 comprises an insulator 54 and a plurality of conductors 56 or 57 embedded in the insulator 54 adapted to conduct the electrical signals. A method of making an image acquisition device 30 is also provided.
摘要翻译： 提供图像采集装置30。 图像采集装置30包括适于将电磁辐射转换成电信号的光电导体48，耦合到光电导体48的第一层36或37.互连层36或37包括绝缘体54和嵌入的多个导体56或57 在适于传导电信号的绝缘体54中。 还提供了一种制作图像采集装置30的方法。
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公开(公告)号：US07054410B2
公开(公告)日：2006-05-30
申请号：US10439350
申请日：2003-05-15
申请人： George Zentai , Larry Partain
发明人： George Zentai , Larry Partain
IPC分类号： G01N23/00
CPC分类号： A61B6/482 , A61B6/00 , A61B6/4216
摘要： An X-ray image acquisition apparatus includes a panel having a first electrode, a second electrode, and a photoconductor secured between said first and second electrodes. The photoconductor has a thickness configured to absorb X-ray radiation at a high energy level. The first and second electrodes are configured to create an electric field for transporting charges created in the photoconductor to a pixel unit, thereby allowing charges to be efficiently collected when low or high energy X-ray radiation is used.
摘要翻译： X射线图像获取装置包括具有第一电极，第二电极和固定在所述第一和第二电极之间的光电导体的面板。 光电导体具有被配置为在高能级吸收X射线辐射的厚度。 第一和第二电极被配置成产生用于将在光电导体中产生的电荷传送到像素单元的电场，从而当使用低能量或高能量X射线辐射时可以有效地收集电荷。
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公开(公告)号：US20080237481A1
公开(公告)日：2008-10-02
申请号：US11731170
申请日：2007-03-29
IPC分类号： G01T1/24 , H01L27/146
CPC分类号： H01L27/14676 , G01T1/244 , H01L27/14618 , H01L27/1462 , H01L2924/0002 , H01L2924/00
摘要： Improved corrosion resistance for direct X-ray imaging detectors is obtained by providing a pixelated, electrically conductive barrier layer between the X-ray sensitive material and the pixel electrodes. Each barrier layer can cover part or all of its corresponding pixel electrode. In cases where pixel electrodes makes contact to underlying circuitry through vertical vias, it is preferred for the barrier layers to cover the via sections of the pixel electrodes. The barrier layers for each pixel electrode can be spaced apart from each other, or they can all be included within a continuous film on top of the pixel electrodes. Such a continuous film can be pixelated by spatially modulating its properties (e.g., thickness, doping) to significantly reduce lateral conductivity from pixel to pixel.
摘要翻译： 通过在X射线敏感材料和像素电极之间提供像素化的导电阻挡层，可以获得直接X射线成像检测器的耐腐蚀性。 每个阻挡层可以覆盖其对应的像素电极的部分或全部。 在像素电极通过垂直通孔与底层电路接触的情况下，优选阻挡层覆盖像素电极的通孔部分。 每个像素电极的阻挡层可以彼此间隔开，或者它们都可以包括在像素电极顶部的连续膜内。 这样的连续膜可以通过空间调节其性质（例如，厚度，掺杂）而被像素化，以显着降低从像素到像素的横向电导率。
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公开(公告)号：US20050082491A1
公开(公告)日：2005-04-21
申请号：US10687550
申请日：2003-10-15
申请人： Edward Seppi , Larry Partain , George Zentai
发明人： Edward Seppi , Larry Partain , George Zentai
IPC分类号： G01T1/20 , G01T1/24 , G01T1/36 , H01L27/146
CPC分类号： G01T1/362 , A61B5/7289 , A61B5/7292 , A61B6/032 , A61B6/4035 , A61B6/405 , A61B6/4233 , A61B6/4241 , A61B6/4441 , A61B6/481 , A61B6/482 , A61B6/502 , A61B6/5288 , A61B6/541 , G01T1/2018 , H01L27/14667 , H01L27/14676
摘要： A radiation projection detector includes a conversion layer configured to generate light photons in response to a radiation, the conversion layer having a plurality of first conversion elements and a plurality of second conversion elements, and a photo detector array aligned with the conversion panel, wherein each of the first conversion elements has a first radiation conversion characteristic, and each of the second conversion elements has a second radiation conversion characteristic. A radiation projection detector includes a photoconductor layer configured to generate charges in response to radiation, the photoconductor layer having a plurality of first photoconductor elements and a plurality of second photoconductor elements, and a detector array aligned with the photoconductor layer, wherein each of the first photoconductor elements has a first charge generating characteristic, and each of the second photoconductor elements has a second charge generating characteristic.
摘要翻译： 辐射投影检测器包括被配置为响应于辐射而产生光子的转换层，所述转换层具有多个第一转换元件和多个第二转换元件以及与转换面板对准的光电检测器阵列，其中每个 的第一转换元件具有第一辐射转换特性，并且每个第二转换元件具有第二辐射转换特性。 辐射投影检测器包括被配置为响应于辐射产生电荷的光电导体层，所述光电导体层具有多个第一光电导体元件和多个第二光电导体元件，以及与所述光电导体层对准的检测器阵列，其中所述第一 光电导体元件具有第一电荷产生特性，并且每个第二感光体元件具有第二电荷产生特性。
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公开(公告)号：US10380736B1
公开(公告)日：2019-08-13
申请号：US15290951
申请日：2016-10-11
摘要： Methods of obtaining a suspect nodules' sizes and/or growth rate are provided. In one embodiment, the method begins with at a first time: (i) obtaining a first three dimensional (3D) data set cube of voxels of a patient's anatomy including nodules; (ii) creating a second 3D data set cube of the same size as the first where all voxel values are set to zero; (iii) creating multiple Maximum-Intensity-Projection (MIP) images from the first 3D data set cube taken at different angles; (iv) replacing those voxels in the second 3D data set cube with corresponding voxels from the first 3D data set cube that provide non-zero values in the multiple MIP images; and (v) converting data in the second 3D data set cube into closed surface volumes, cross sectional areas or linear dimensions using image segmentation. Data from a second time can be used to determine growth rate.
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公开(公告)号：US08232531B2
公开(公告)日：2012-07-31
申请号：US11731170
申请日：2007-03-29
IPC分类号： H01L25/00
CPC分类号： H01L27/14676 , G01T1/244 , H01L27/14618 , H01L27/1462 , H01L2924/0002 , H01L2924/00
摘要： Improved corrosion resistance for direct X-ray imaging detectors is obtained by providing a pixelated, electrically conductive barrier layer between the X-ray sensitive material and the pixel electrodes. Each barrier layer can cover part or all of its corresponding pixel electrode. In cases where pixel electrodes makes contact to underlying circuitry through vertical vias, it is preferred for the barrier layers to cover the via sections of the pixel electrodes. The barrier layers for each pixel electrode can be spaced apart from each other, or they can all be included within a continuous film on top of the pixel electrodes. Such a continuous film can be pixelated by spatially modulating its properties (e.g., thickness, doping) to significantly reduce lateral conductivity from pixel to pixel.
摘要翻译： 通过在X射线敏感材料和像素电极之间提供像素化的导电阻挡层，可以获得直接X射线成像检测器的耐腐蚀性。 每个阻挡层可以覆盖其对应的像素电极的部分或全部。 在像素电极通过垂直通孔与底层电路接触的情况下，优选阻挡层覆盖像素电极的通孔部分。 每个像素电极的阻挡层可以彼此间隔开，或者它们都可以包括在像素电极顶部的连续膜内。 这样的连续膜可以通过空间调节其性质（例如，厚度，掺杂）而被像素化，以显着降低从像素到像素的横向电导率。
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公开(公告)号：US07884438B2
公开(公告)日：2011-02-08
申请号：US11193162
申请日：2005-07-29
申请人： Larry Dean Partain , George Zentai
发明人： Larry Dean Partain , George Zentai
IPC分类号： H01L27/146
CPC分类号： G01T1/24
摘要： A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.
摘要翻译： 用于检测兆伏特（MV）辐射的光电检测器包括半导体转换层，其具有与第一表面相对布置的第一表面和第二表面，耦合到第一表面的第一电极，耦合到第二表面的第二电极和低密度 衬底，包括耦合到与半导体转换层相对的第二电极的检测器阵列。 光电检测器包括足够厚度的高密度材料以从入射的MV辐射产生足够数量的光电子，使得光电子能够被转换层接收并转换成足够的再充电载体，以便由检测器阵列检测。
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