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1.发明授权Process for fabricating an integrated circuit including a capacitor with a copper electrode 有权用于制造包括具有铜电极的电容器的集成电路的工艺公开(公告)号：US07501291B2
公开(公告)日：2009-03-10
申请号：US11379246
申请日：2006-04-19
IPC分类号： H01L21/00 , H01L21/8242
摘要： The process and integrated circuit include at least one capacitor in which at least one of the electrodes is made of copper. The method includes forming a nitrogen-doped silicon carbide film between the copper electrode and the dielectric film of the capacitor.
摘要翻译： 该工艺和集成电路包括至少一个电容器，其中至少一个电极由铜制成。 该方法包括在铜电极和电容器的电介质膜之间形成氮掺杂碳化硅膜。
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2.发明申请公开(公告)号：US20060240576A1
公开(公告)日：2006-10-26
申请号：US11379246
申请日：2006-04-19
IPC分类号： H01L21/00
摘要： The process and integrated circuit include at least one capacitor in which at least one of the electrodes is made of copper. The method includes forming a nitrogen-doped silicon carbide film between the copper electrode and the dielectric film of the capacitor.
摘要翻译： 该工艺和集成电路包括至少一个电容器，其中至少一个电极由铜制成。 该方法包括在铜电极和电容器的电介质膜之间形成氮掺杂碳化硅膜。
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