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公开(公告)号:US20130212543A1
公开(公告)日:2013-08-15
申请号:US13753401
申请日:2013-01-29
申请人: Michael Matthew M. CROUSE , Youri Johannes Laurentius Maria VAN DOMMELEN , Peng LIU , Hua-Yu LIU , Aiqin JIANG , Wenjin HUANG
发明人: Michael Matthew M. CROUSE , Youri Johannes Laurentius Maria VAN DOMMELEN , Peng LIU , Hua-Yu LIU , Aiqin JIANG , Wenjin HUANG
IPC分类号: G06F17/50
CPC分类号: G06F17/5081 , G03F7/70125 , G03F7/70433 , G03F7/705 , G03F7/70891
摘要: A computer-implemented method for improving a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus comprising an illumination source and projection optics, the method including computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, at least some of the design variables being characteristics of the illumination source and the design layout, the computing of the multi-variable cost function accounting for lens heating effects; and reconfiguring the characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied.
摘要翻译: 一种用于改进用于使用包括照明源和投影光学器件的光刻投影装置将设计布局的一部分成像到基板上的光刻处理的计算机实现的方法,所述方法包括计算多个设计变量的多变量成本函数 这是光刻过程的特征,至少一些设计变量是照明源的特征和设计布局,计算多变量成本函数来计算透镜加热效应; 并且通过调整设计变量来重新配置光刻处理的特性,直到满足预定的终止条件。
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公开(公告)号:US20130311958A1
公开(公告)日:2013-11-21
申请号:US13888816
申请日:2013-05-07
申请人: Hua-Yu LIU
发明人: Hua-Yu LIU
IPC分类号: G06F17/50
CPC分类号: G06F17/5081 , G03F1/144 , G03F1/36 , G03F7/70125 , G03F7/70425 , G03F7/70441 , G03F7/705 , G03F7/70666 , G06F17/50 , G06F17/5009
摘要: The present invention relates to lithographic apparatuses and processes, and more particularly to tools for co-optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present invention enables full chip pattern coverage while lowering the computation cost by intelligently selecting a small set of critical design patterns from the full set of clips to be used in source and mask optimization. Optimization is performed only on these selected patterns to obtain an optimized source. The optimized source is then used to optimize the mask (e.g. using OPC and manufacturability verification) for the full chip, and the process window performance results are compared. If the results are comparable to conventional full-chip SMO, the process ends, otherwise various methods are provided for iteratively converging on the successful result.
摘要翻译: 本发明涉及光刻设备和工艺,更具体地涉及用于共同优化用于光刻设备和工艺的照明源和掩模的工具。 根据某些方面,本发明通过从源和掩码优化中使用的全套剪辑智能地选择一小组关键设计模式来实现全芯片模式覆盖,同时降低计算成本。 仅对这些选择的模式执行优化以获得优化的源。 然后优化的源用于优化全芯片的掩模(例如使用OPC和可制造性验证),并比较处理窗口性能结果。 如果结果与传统的全芯片SMO相当,则过程结束,否则提供了各种方法来迭代地收敛成功的结果。
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