公开(公告)号：US07037830B1

公开(公告)日：2006-05-02

申请号：US09675627

申请日：2000-09-29

申请人： Michael Rumer ,  Jack Griswold ,  Tom Dorsh ,  Michael Kwok Leung Ng ,  David E. Reedy ,  Paul D. Healey ,  Michal Danek ,  Reed W. Rosenberg

发明人： Michael Rumer ,  Jack Griswold ,  Tom Dorsh ,  Michael Kwok Leung Ng ,  David E. Reedy ,  Paul D. Healey ,  Michal Danek ,  Reed W. Rosenberg

IPC分类号： H01L21/441 ,  H01L21/445

CPC分类号： H01L21/7685 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76838 ,  H01L21/76876 ,  H01L2221/1078

摘要： A physical vapor deposition sputtering process for enhancing the preferred orientation of a titanium layer uses hydrogen before or during the deposition process. Using the oriented titanium layer as a base layer for a titanium, titanium nitride, aluminum interconnect stack results in formation of an aluminum layer with predominant crystallographic orientation which provides enhanced resistance to electromigration. In one process, a mixture of an inert gas, usually argon, and hydrogen is used as the sputtering gas for PVD deposition of titanium in place of pure argon. Alternatively, titanium is deposited in a two-step process in which an initial burst of hydrogen is introduced into the reaction chamber in a separate, first step. Pure argon is used as the sputtering gas for the titanium deposition in a second step. The method is broadly applicable to the deposition of metallization layers.

摘要翻译： 用于增强钛层的优选取向的物理气相沉积溅射方法在沉积过程之前或期间使用氢。 使用取向钛层作为钛，氮化钛，铝互连叠层的基底层导致形成具有主要<111>晶体取向的铝层，其提供增强的电迁移阻力。 在一个方法中，使用惰性气体，通常为氩气和氢气的混合物作为用于PVD沉积钛以代替纯氩气的溅射气体。 或者，钛以两步法沉积，其中在第一步骤中将初始爆发的氢气引入反应室。 在第二步中使用纯氩作为用于钛沉积的溅射气体。 该方法广泛适用于金属化层的沉积。