摘要:
A reading circuit for a semiconductor memory, comprising: a circuital branch adapted to be electrically coupled to a bit line which is connected to a memory cell to be read; an evaluation circuit adapted to sense a cell electric current flowing through the bit line during a sensing phase of a reading operation of the data stored into the memory cell, the evaluation circuit comprising a negative feedback control loop adapted to control the potential of the bit line during the sensing phase, the control loop comprising a differential amplifier having an inverting input terminal operatively connected to the bit line, a non-inverting input terminal fed by a first reference potential, and a feedback circuital path connected between an output of the differential amplifier and the inverting input, wherein the feedback circuital path is adapted to conduct a measure current corresponding to the cell electric current, and comprises current/voltage conversion means for converting the measure current into a corresponding voltage. The conversion means of the feedback circuital path comprises at least one first transistor arranged to conduct the measure current, and biasing means adapted to bias the at least one first transistor so as to emulate the behavior of a resistor.
摘要:
A reading circuit for a semiconductor memory, comprising: a circuital branch adapted to be electrically coupled to a bit line which is connected to a memory cell to be read; an evaluation circuit adapted to sense a cell electric current flowing through the bit line during a sensing phase of a reading operation of the data stored into the memory cell, the evaluation circuit comprising a negative feedback control loop adapted to control the potential of the bit line during the sensing phase, the control loop comprising a differential amplifier having an inverting input terminal operatively connected to the bit line, a non-inverting input terminal fed by a first reference potential, and a feedback circuital path connected between an output of the differential amplifier and the inverting input, wherein the feedback circuital path is adapted to conduct a measure current corresponding to the cell electric current, and comprises current/voltage conversion means for converting the measure current into a corresponding voltage. The conversion means of the feedback circuital path comprises at least one first transistor arranged to conduct the measure current, and biasing means adapted to bias the at least one first transistor so as to emulate the behavior of a resistor.
摘要:
Described herein is a reading circuit for a nonvolatile memory device, wherein the currents flowing through an array memory cell to be read, and a reference memory cell with known contents, are converted into an array voltage and, respectively, into a reference voltage, which are compared to determine the contents of the array memory cell. The method envisages reducing the electrical stress to which the reference memory cell is subjected during reading, by generating and holding a sample of the reference voltage, then deselecting the reference memory cell, and then continuing reading using the sample of the reference voltage.
摘要:
A reading circuit for a semiconductor memory, comprising: a circuital branch adapted to be electrically coupled to a bit line which is connected to a memory cell to be read; an evaluation circuit adapted to sense a cell electric current flowing through the bit line during a sensing phase of a reading operation of the data stored into the memory cell, the evaluation circuit comprising a negative feedback control loop adapted to control the potential of the bit line during the sensing phase, the control loop comprising a differential amplifier having an inverting input terminal operatively connected to the bit line, a non-inverting input terminal fed by a first reference potential, and a feedback circuital path connected between an output of the differential amplifier and the inverting input, wherein the feedback circuital path is adapted to conduct a measure current corresponding to the cell electric current, and comprises current/voltage conversion means for converting the measure current into a corresponding voltage. The conversion means of the feedback circuital path comprises at least one first transistor arranged to conduct the measure current, and biasing means adapted to bias the at least one first transistor so as to emulate the behavior of a resistor.
摘要:
A voltage regulator including an output stage to generate an output voltage based upon a control voltage determined as a function of a difference between a reference voltage and a voltage representative of the output voltage. A sense resistor is coupled in series with the output stage and an auxiliary power stage is coupled in parallel with the output stage and cooperates therewith to supply a load as a function of a voltage drop across the sense resistor. A scaled replica stage of the output stage is controlled by the control voltage to generate a replica voltage of the output voltage. A bias network biases the scaled replica stage and output stage with identical currents to keep constant bias voltages. The output stage, the auxiliary power stage, the scaled replica stage, and the bias network each have high voltage transistors. The bias network is input with a square-wave control signal and an externally generated boosted voltage, to bias the scaled replica stage and the output stage in conduction states with the identical currents at the externally generated boosted voltage, when the square-wave control signal is active.
摘要:
The output buffer stage includes a half-bridge output stage having a first pair of complementary drivers connected in series between a supply line and a ground node, the high impedance state or conduction state of which is determined through a pair of control phases. The buffer stage includes a pair of switches controlled by the control phases, connected in series between them and connecting the transistors of the first stage in series. Each driver is connected in series with a switch, that is quickly opened to prevent under-threshold currents from circulating when the respective driver is turned off, and that is rapidly turned off when the respective driver is turned on.
摘要:
A self-adaptive output buffer for an output terminal of an electronic circuit suitable to be connected to a load is proposed. The self-adaptive output buffer includes means for sensing an indication of the capacitance of the load and means for driving the load according to the sensing, wherein the means for sensing includes capacitive means with a preset capacitance, means for charging the capacitive means to a preset voltage, means for coupling the charged capacitive means with the load, and means for measuring a measuring voltage at the capacitive means due to a charge sharing between the capacitive means and the load.
摘要:
An architecture for implementing an integrated capacity advantageously includes a capacitive block inserted between a first and a second voltage reference. The block is formed from elementary capacitive modules. An enable block is inserted between the first voltage reference and the capacitive block and includes switches connected to the elementary capacitive modules and driven on their control terminals by control signals. Each switch of the enable block is inserted between the first voltage reference and a first end of a corresponding elementary capacitive module. A verify and enable circuit is connected to the first voltage reference, as well as at the input of the first end of the elementary capacitive modules and at the output of the control terminals of the switches of the enable block. The verify and enable circuit detects the presence of a current value in each of the elementary capacitive modules and, if said current is detected, disables that elementary capacitive module of the capacitive block using the corresponding switch of the enable block.
摘要:
An output CMOS buffer includes MOS enhancement transistors and has a second complementary pair of natural or low threshold transistors, connected respectively in parallel to transistors of opposite type of conductivity of the complementary pair of enhancement MOS transistors of the final buffer stage. The gate terminals of the pair of natural or low threshold transistors are controlled by respective inverters, each supplied through a slew rate limiter of the slope of the driving current and are respectively connected between the positive supply node of the output buffer and a negative (below ground potential) node and between the common ground node of the output buffer and a positive supply node. The negative voltage and the positive voltage on the nodes are at least equal to the absolute value of the threshold voltage of the natural or low threshold transistors.
摘要:
A self-adaptive output buffer for an output terminal of an electronic circuit suitable to be connected to a load is proposed. The self-adaptive output buffer includes means for sensing an indication of the capacitance of the load and means for driving the load according to the sensing, wherein the means for sensing includes capacitive means with a preset capacitance, means for charging the capacitive means to a preset voltage, means for coupling the charged capacitive means with the load, and means for measuring a measuring voltage at the capacitive means due to a charge sharing between the capacitive means and the load.