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1.发明申请Resistive Random Access Memory (RERAM) and Conductive Bridging Random Access Memory (CBRAM) Cross Coupled Fuse and Read Method and System 有权电阻随机存取存储器（RERAM）和导电桥接随机存取存储器（CBRAM）交叉耦合保险丝和读取方法与系统公开(公告)号：US20140254244A1
公开(公告)日：2014-09-11
申请号：US14199708
申请日：2014-03-06
Applicant: Microchip Technology Incorporated
Inventor： Traian Bontas , Claudiu-Dumitru Nechifor , Iulian Dumitru , Kent Hewitt
IPC: G11C13/00
CPC classification number: G11C13/004 , G11C7/065 , G11C13/0007 , G11C13/0011 , G11C14/009 , G11C17/165 , G11C17/18
Abstract: By arranging both a conductive and non-conductive resistive memory cell in a cross coupled arrangement to facilitate reading a data state the memory cells can have very small differences in their resistance values and still read correctly. This allows both of the memory cells' resistances to change over time and still have enough difference between their resistances to read the desired data state that was programmed. A pair of ReRAM or CBRAM resistive memory devices are configured as a one bit memory cell and used to store a single data bit wherein one of the resistive memory devices is in an ERASE condition and the other resistive memory devices of the pair is in a WRITE condition. Reading the resistance states of the resistive memory device pairs is accomplished without having to use a reference voltage or current since a trip-point is between the conductive states thereof.
Abstract translation: 通过将交叉耦合布置的导电和非导电电阻存储器单元布置成便于读取数据状态，存储器单元可以在其电阻值上具有非常小的差异并仍然正确读取。 这允许两个存储单元的电阻随时间变化，并且在它们的电阻之间仍然具有足够的差异以读取所编程的所需数据状态。 一对ReRAM或CBRAM电阻性存储器件被配置为一位存储器单元，并用于存储单个数据位，其中一个电阻存储器件处于擦除状态，并且该对中的另一个电阻存储器件处于写入 条件。 读取电阻式存储器件对的电阻状态是完成的，而不必使用参考电压或电流，因为跳变点在其导电状态之间。
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2.发明授权Resistive random access memory (ReRAM) and conductive bridging random access memory (CBRAM) cross coupled fuse and read method and system 有权电阻随机存取存储器（ReRAM）和导电桥接随机存取存储器（CBRAM）交叉耦合保险丝和读取方法和系统公开(公告)号：US09343147B2
公开(公告)日：2016-05-17
申请号：US14199708
申请日：2014-03-06
Applicant: Microchip Technology Incorporated
Inventor： Traian Bontas , Claudiu-Dumitru Nechifor , Iulian Dumitru , Kent Hewitt
CPC classification number: G11C13/004 , G11C7/065 , G11C13/0007 , G11C13/0011 , G11C14/009 , G11C17/165 , G11C17/18
Abstract: By arranging both a conductive and non-conductive resistive memory cell in a cross coupled arrangement to facilitate reading a data state the memory cells can have very small differences in their resistance values and still read correctly. This allows both of the memory cells' resistances to change over time and still have enough difference between their resistances to read the desired data state that was programmed. A pair of ReRAM or CBRAM resistive memory devices are configured as a one bit memory cell and used to store a single data bit wherein one of the resistive memory devices is in an ERASE condition and the other resistive memory devices of the pair is in a WRITE condition. Reading the resistance states of the resistive memory device pairs is accomplished without having to use a reference voltage or current since a trip-point is between the conductive states thereof.
Abstract translation: 通过将交叉耦合布置的导电和非导电电阻存储器单元布置成便于读取数据状态，存储器单元可以在其电阻值上具有非常小的差异并仍然正确读取。 这允许两个存储单元的电阻随时间变化，并且在它们的电阻之间仍然具有足够的差异以读取所编程的所需数据状态。 一对ReRAM或CBRAM电阻性存储器件被配置为一位存储器单元，并用于存储单个数据位，其中一个电阻存储器件处于擦除状态，并且该对中的另一个电阻存储器件处于写入 条件。 读取电阻式存储器件对的电阻状态是完成的，而不必使用参考电压或电流，因为跳变点在其导电状态之间。
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