公开(公告)号：US20190130955A1

公开(公告)日：2019-05-02

申请号：US16184480

申请日：2018-11-08

Applicant: Micron Technology, Inc.

Inventor： Daniele Vimercati ,  Scott James Derner ,  Umberto Di Vincenzo ,  Christopher Johnson Kawamura ,  Eric S. Carman

IPC: G11C11/22

Abstract: Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A ground reference scheme may be employed in a digit line voltage sensing operation. A positive voltage may be applied to a memory cell; and after a voltage of the digit line of the cell has reached a threshold, a negative voltage may be applied to cause the digit line voltages to center around ground before a read operation. In another example, a first voltage may be applied to a memory cell and then a second voltage that is equal to an inverse of the first voltage may be applied to a reference capacitor that is in electronic communication with a digit line of the memory cell to cause the digit line voltages to center around ground before a read operation.

公开(公告)号：US10978126B2

公开(公告)日：2021-04-13

申请号：US16184480

申请日：2018-11-08

Applicant: Micron Technology, Inc.

Inventor： Daniele Vimercati ,  Scott James Derner ,  Umberto Di Vincenzo ,  Christopher Johnson Kawamura ,  Eric S. Carman

IPC: G11C11/22

Abstract: Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A ground reference scheme may be employed in a digit line voltage sensing operation. A positive voltage may be applied to a memory cell; and after a voltage of the digit line of the cell has reached a threshold, a negative voltage may be applied to cause the digit line voltages to center around ground before a read operation. In another example, a first voltage may be applied to a memory cell and then a second voltage that is equal to an inverse of the first voltage may be applied to a reference capacitor that is in electronic communication with a digit line of the memory cell to cause the digit line voltages to center around ground before a read operation.