公开(公告)号：US20220270702A1

公开(公告)日：2022-08-25

申请号：US17743989

申请日：2022-05-13

Applicant: Micron Technology, Inc.

Inventor： Guang Hu ,  Ting Luo ,  Chun Sum Yueng

IPC: G11C29/42 ,  G11C7/20 ,  G11C29/44

Abstract: A method includes determining whether a data reliability parameter associated with a set of memory cells is greater than a threshold data reliability parameter and in response to determining that the data reliability parameter is greater than the threshold data reliability parameter, performing an error recovery operation. The method further includes, subsequent to performing the error recovery operation, determining whether the data reliability parameter associated with the set of memory cells is less than the threshold data reliability parameter and in response to determining that the data reliability parameter is less than the threshold data reliability parameter, setting an offset associated with the error recovery operation as a default read voltage for the set of memory cells.

公开(公告)号：US11657891B2

公开(公告)日：2023-05-23

申请号：US17743989

申请日：2022-05-13

Applicant: Micron Technology, Inc.

Inventor： Guang Hu ,  Ting Luo ,  Chun Sum Yueng

IPC: G11C29/42 ,  G11C7/20 ,  G11C29/44

CPC classification number: G11C29/42 ,  G11C7/20 ,  G11C29/44

Abstract: A method includes determining whether a data reliability parameter associated with a set of memory cells is greater than a threshold data reliability parameter and in response to determining that the data reliability parameter is greater than the threshold data reliability parameter, performing an error recovery operation. The method further includes, subsequent to performing the error recovery operation, determining whether the data reliability parameter associated with the set of memory cells is less than the threshold data reliability parameter and in response to determining that the data reliability parameter is less than the threshold data reliability parameter, setting an offset associated with the error recovery operation as a default read voltage for the set of memory cells.

公开(公告)号：US20220334753A1

公开(公告)日：2022-10-20

申请号：US17234095

申请日：2021-04-19

Applicant: Micron Technology, Inc.

Inventor： Chun Sum Yueng ,  Guang Hu ,  Ting Luo ,  Tao Liu

IPC: G06F3/06

Abstract: A method includes performing a first read operation involving a set of memory cells using a first voltage, determining a quantity of bits associated with the set of memory cells based on the first read operation, performing a second read operation involving the set of memory cells using a second voltage that is greater than the first voltage when the quantity of bits is above a threshold quantity of bits for the set of memory cells, and performing the second read operation involving the set of memory cells using a third voltage that is less than the first voltage when the quantity of bits is below the threshold quantity of bits for the set of memory cells.

公开(公告)号：US11335429B1

公开(公告)日：2022-05-17

申请号：US17122864

申请日：2020-12-15

Applicant: Micron Technology, Inc.

Inventor： Guang Hu ,  Ting Luo ,  Chun Sum Yueng

IPC: G11C29/42 ,  G11C7/20 ,  G11C29/44

Abstract: A method includes determining whether a data reliability parameter associated with a set of memory cells is greater than a threshold data reliability parameter and in response to determining that the data reliability parameter is greater than the threshold data reliability parameter, performing an error recovery operation. The method further includes, subsequent to performing the error recovery operation, determining whether the data reliability parameter associated with the set of memory cells is less than the threshold data reliability parameter and in response to determining that the data reliability parameter is less than the threshold data reliability parameter, setting an offset associated with the error recovery operation as a default read voltage for the set of memory cells.