公开(公告)号：US20220375503A1

公开(公告)日：2022-11-24

申请号：US17882975

申请日：2022-08-08

Applicant: Micron Technology, Inc.

Inventor： Ting Luo ,  Tao Liu ,  Christopher J. Bueb ,  Eric Yuen ,  Cheng Cheng Ang

IPC: G11C7/04 ,  G11C7/10

Abstract: A method includes monitoring a temperature of a memory component of a memory sub-system to determine that the temperature of the memory component corresponds to a first monitored temperature value; writing data to the memory component of the memory sub-system while the temperature of the memory component corresponds to the first monitored temperature value; determining that the first monitored temperature value exceeds a threshold temperature range; monitoring the temperature of the memory component of the memory sub-system to determine that the temperature of the memory component corresponds to a second monitored temperature value that is within the threshold temperature range; and rewriting the data to the memory component of the memory sub-system while the temperature of the memory component corresponds to the second monitored temperature value.

公开(公告)号：US20220277802A1

公开(公告)日：2022-09-01

申请号：US17747598

申请日：2022-05-18

Applicant: Micron Technology, Inc.

Inventor： Tao Liu ,  Chun Sum Yeung ,  Xiangang Luo

IPC: G11C29/00 ,  G11C29/52 ,  G11C29/44

Abstract: A replacement block pool for a memory device is established. The replacement block pool comprises one or more valid blocks from a set of valid blocks in the memory device determined based on a constraint defining a minimum number of valid blocks for the memory device. A grown bad block is detected in the memory device. The grown bad block is replaced with a replacement block from the replacement block pool in response to detecting the grown bad block.

公开(公告)号：US20220147252A1

公开(公告)日：2022-05-12

申请号：US17095386

申请日：2020-11-11

Applicant: Micron Technology, Inc.

Inventor： Tao Liu ,  Xiangang Luo

IPC: G06F3/06

Abstract: A method includes detecting a power-up event associated with a memory sub-system comprising a plurality of blocks of memory cells having blocks of memory cells associated therewith, responsive to detecting the power-up event and prior to receipt of signaling indicative of a host initiation sequence, determining that a block of memory cells associated with a respective block among the plurality of blocks of memory cells is an open virtual block of memory cells, determining that the respective block associated with the open virtual block of memory cells exhibits greater than a threshold health characteristic value, and selectively performing a media management operation of a respective block of memory cells associated with the open virtual block of memory cells in response to the determination that the respective block exhibits greater than the threshold health characteristic value.

公开(公告)号：US20210391029A1

公开(公告)日：2021-12-16

申请号：US16903066

申请日：2020-06-16

Applicant: Micron Technology, Inc.

Inventor： Tao Liu ,  Chun Sum Yeung ,  Xiangang Luo

IPC: G11C29/00 ,  G11C29/44 ,  G11C29/52

Abstract: A replacement block pool for a memory device is established. The replacement block pool comprises one or more valid blocks from a set of valid blocks in the memory device determined based on a constraint defining a minimum number of valid blocks for the memory device. A grown bad block is detected in the memory device. The grown bad block is replaced with a replacement block from the replacement block pool in response to detecting the grown bad block.

公开(公告)号：US11934690B2

公开(公告)日：2024-03-19

申请号：US18105043

申请日：2023-02-02

Applicant: Micron Technology, Inc.

Inventor： Tao Liu ,  Ting Luo ,  Jianmin Huang

IPC: G11C16/34 ,  G06F3/06

CPC classification number: G06F3/0655 ,  G06F3/0604 ,  G06F3/0679 ,  G11C16/349

Abstract: A method includes determining a first memory access count threshold for a first word line of a block of memory cells and determining a second memory access count threshold for a second word line of the block of memory cells. The second memory access count threshold can be greater than the first memory access count threshold. The method can further include incrementing a memory block access count corresponding to the block of memory cells that includes the first word line and the second word line in response to receiving a memory access command and refreshing the first word line when the memory block access count corresponding to the block of memory cells is equal to the first memory access count threshold.

公开(公告)号：US11822796B2

公开(公告)日：2023-11-21

申请号：US17857780

申请日：2022-07-05

Applicant: Micron Technology, Inc.

Inventor： Tao Liu ,  Xiangang Luo

IPC: G06F3/06

CPC classification number: G06F3/0625 ,  G06F3/0604 ,  G06F3/0652 ,  G06F3/0679

Abstract: A method includes detecting a power-up event associated with a memory sub-system comprising a plurality of blocks of memory cells having blocks of memory cells associated therewith, responsive to detecting the power-up event and prior to receipt of signaling indicative of a host initiation sequence, determining that a block of memory cells associated with a respective block among the plurality of blocks of memory cells is an open virtual block of memory cells, determining that the respective block associated with the open virtual block of memory cells exhibits greater than a threshold health characteristic value, and selectively performing a media management operation of a respective block of memory cells associated with the open virtual block of memory cells in response to the determination that the respective block exhibits greater than the threshold health characteristic value.

公开(公告)号：US20230205450A1

公开(公告)日：2023-06-29

申请号：US18111213

申请日：2023-02-17

Applicant: Micron Technology, Inc.

Inventor： Chun Sum Yeung ,  Guang Hu ,  Ting Luo ,  Tao Liu

IPC: G06F3/06

CPC classification number: G06F3/0655 ,  G06F3/0604 ,  G06F3/0679

Abstract: A method includes performing a first read operation involving a set of memory cells using a first voltage, determining a quantity of bits associated with the set of memory cells based on the first read operation, performing a second read operation involving the set of memory cells using a second voltage that is greater than the first voltage when the quantity of bits is above a threshold quantity of bits for the set of memory cells, and performing the second read operation involving the set of memory cells using a third voltage that is less than the first voltage when the quantity of bits is below the threshold quantity of bits for the set of memory cells.

公开(公告)号：US20230185479A1

公开(公告)日：2023-06-15

申请号：US18105043

申请日：2023-02-02

Applicant: Micron Technology, Inc.

Inventor： Tao Liu ,  Ting Luo ,  Jianmin Huang

IPC: G06F3/06 ,  G11C16/34

CPC classification number: G06F3/0655 ,  G06F3/0679 ,  G06F3/0604 ,  G11C16/349

Abstract: A method includes determining a first memory access count threshold for a first word line of a block of memory cells and determining a second memory access count threshold for a second word line of the block of memory cells. The second memory access count threshold can be greater than the first memory access count threshold. The method can further include incrementing a memory block access count corresponding to the block of memory cells that includes the first word line and the second word line in response to receiving a memory access command and refreshing the first word line when the memory block access count corresponding to the block of memory cells is equal to the first memory access count threshold.

公开(公告)号：US11409446B2

公开(公告)日：2022-08-09

申请号：US17095386

申请日：2020-11-11

Applicant: Micron Technology, Inc.

Inventor： Tao Liu ,  Xiangang Luo

IPC: G06F3/06

Abstract: A method includes detecting a power-up event associated with a memory sub-system comprising a plurality of blocks of memory cells having blocks of memory cells associated therewith, responsive to detecting the power-up event and prior to receipt of signaling indicative of a host initiation sequence, determining that a block of memory cells associated with a respective block among the plurality of blocks of memory cells is an open virtual block of memory cells, determining that the respective block associated with the open virtual block of memory cells exhibits greater than a threshold health characteristic value, and selectively performing a media management operation of a respective block of memory cells associated with the open virtual block of memory cells in response to the determination that the respective block exhibits greater than the threshold health characteristic value.

公开(公告)号：US20220138073A1

公开(公告)日：2022-05-05

申请号：US17085671

申请日：2020-10-30

Applicant: Micron Technology, Inc.

Inventor： Ting Luo ,  Tao Liu ,  Christopher J. Bueb ,  Eric Yuen ,  Cheng Cheng Ang

IPC: G06F11/30 ,  G06F11/07

Abstract: A method includes monitoring a temperature of a memory component of a memory sub-system to determine that the temperature of the memory component corresponds to a first monitored temperature value; writing data to the memory component of the memory sub-system while the temperature of the memory component corresponds to the first monitored temperature value; determining that the first monitored temperature value exceeds a threshold temperature range; monitoring the temperature of the memory component of the memory sub-system to determine that the temperature of the memory component corresponds to a second monitored temperature value that is within the threshold temperature range; and rewriting the data to the memory component of the memory sub-system while the temperature of the memory component corresponds to the second monitored temperature value.