公开(公告)号：US20230317798A1

公开(公告)日：2023-10-05

申请号：US17712294

申请日：2022-04-04

Applicant: Micron Technology, Inc.

Inventor： Adharsh Rajagopal ,  Scott E. Sills ,  Sumeet C. Pandey ,  David M. Guzman

IPC: H01L29/24 ,  H01L27/108 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/24 ,  H01L27/108 ,  H01L29/7869 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/66969

Abstract: Systems, methods and apparatus are provided for transistors having a first source/drain region, a second source/drain region, and a channel region, wherein the channel region comprises an antimony-gallium-zinc-oxide (SbGZO) material.