公开(公告)号：US20240047346A1

公开(公告)日：2024-02-08

申请号：US17880444

申请日：2022-08-03

Applicant: Micron Technology, Inc.

Inventor： Rutuparna Narulkar ,  Chandra Tiwari ,  Dmitry Mikulik ,  Erica A. Ellingson ,  Yucheng Wang ,  Mathew Thomas

IPC: H01L23/522 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11582

CPC classification number: H01L23/5228 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11582

Abstract: Memory circuitry comprising strings of memory cells comprises a stack comprising vertically-alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers in a memory-array region. The insulative tiers and the conductive tiers extend from the memory-array region into a stair-step region. The stair-step region comprises a cavity comprising a flight of stairs. A lining has a specific resistance of at least 1×104 ohm·m at 20° C. atop treads of the stairs of the flight of stairs. Individual of the treads comprise conducting material of one of the conductive tiers. The lining comprises at least one of (a), (b), (c), and (d), where: (a): M1xM2yOz having a specific resistance of at least 1×104 ohm·m at 20° C. and where M1 and M2 are each a different one of Hf, Zr, Al, Ta, Sc, and Y; “z” is greater than zero; and at least one of “x” and “y” is greater than zero; (b) BtCwOv having a specific resistance of at least 1×104 ohm·m at 20° C. and where each of “t” and “v” is greater than zero (c): BrCs having a specific resistance of at least 1×104 ohm·m at 20° C. and where each of “r” and “s” is greater than zero; and (d): BkChNp having a specific resistance of at least 1×104 ohm·m at 20° C. and where each of “k” and “p” is greater than zero. Insulative material in the cavity is directly above the lining that comprises the at least one of the (a), the (b), the (c), and the (d). Conductive vias extend through the insulative material and the lining that comprises the at least one of the (a), the (b), the (c), and the (d). Individual of the conductive vias are directly above and directly against the conducting material of one of the individual treads. Methods are disclosed.

公开(公告)号：US12147320B2

公开(公告)日：2024-11-19

申请号：US17936948

申请日：2022-09-30

Applicant: Micron Technology, Inc.

Inventor： Bhumika Chhabra ,  Erica A. Ellingson ,  Sumedha Gandharava

IPC: G06F11/00 ,  G06F11/30 ,  G06F11/32

Abstract: Systems, methods, and apparatuses for data prioritization and selective data processing are described herein. A computing device may receive sensor data and prioritize a first portion of the sensor data over a second portion of the sensor data. The first portion of sensor data may be stored in a first memory that has a higher access rate than a second memory where the second portion of sensor data is stored. The first portion of sensor data may be processed with priority and the second portion of sensor data may be transmitted to a cloud computing device.

公开(公告)号：US20250061035A1

公开(公告)日：2025-02-20

申请号：US18935231

申请日：2024-11-01

Applicant: Micron Technology, Inc.

Inventor： Bhumika Chhabra ,  Erica A. Ellingson ,  Sumedha Gandharava

IPC: G06F11/30 ,  G06F11/32

Abstract: Systems, methods, and apparatuses for data prioritization and selective data processing are described herein. A computing device may receive sensor data and prioritize a first portion of the sensor data over a second portion of the sensor data. The first portion of sensor data may be stored in a first memory that has a higher access rate than a second memory where the second portion of sensor data is stored. The first portion of sensor data may be processed with priority and the second portion of sensor data may be transmitted to a cloud computing device.

公开(公告)号：US20240111651A1

公开(公告)日：2024-04-04

申请号：US17936948

申请日：2022-09-30

Applicant: Micron Technology, Inc.

Inventor： Bhumika Chhabra ,  Erica A. Ellingson ,  Sumedha Gandharava

IPC: G06F11/30 ,  G06F11/32

CPC classification number: G06F11/3089 ,  G06F11/3075 ,  G06F11/327

Abstract: Systems, methods, and apparatuses for data prioritization and selective data processing are described herein. A computing device may receive sensor data and prioritize a first portion of the sensor data over a second portion of the sensor data. The first portion of sensor data may be stored in a first memory that has a higher access rate than a second memory where the second portion of sensor data is stored. The first portion of sensor data may be processed with priority and the second portion of sensor data may be transmitted to a cloud computing device.

公开(公告)号：US20230064985A1

公开(公告)日：2023-03-02

申请号：US17464016

申请日：2021-09-01

Applicant: Micron Technology, Inc.

Inventor： Trupti D. Gawai ,  Brooke Spencer ,  Erica A. Ellingson

IPC: G16H10/65 ,  G16C20/40 ,  G06Q30/02

Abstract: Methods, systems, and devices associated with a smart scent library are described. An apparatus can include a processing resource and a memory resource having instructions executable to store data representing a number of chemical compositions in a smart scent library. The instructions can be executable to receive data, including a chemical composition, and compare the chemical composition to the number of chemical compositions. The instructions can be executable to identify the chemical composition in response to matching at least a portion of the chemical composition to one of the number of chemical compositions, and transmit data associated with the identified chemical composition.