公开(公告)号：US11733892B2

公开(公告)日：2023-08-22

申请号：US17362542

申请日：2021-06-29

Applicant: Micron Technology, Inc.

Inventor： Xiangang Luo ,  Ashutosh Malshe ,  Huachen Li ,  Giuseppe D'eliseo ,  Jianmin Huang

IPC: G06F3/06

CPC classification number: G06F3/064 ,  G06F3/0604 ,  G06F3/0679

Abstract: An apparatus can include a partial superblock memory management component. The partial superblock memory management component can identify bad blocks in respective planes of a block of non-volatile memory cells. The partial superblock memory management component can determine that a plane of the respective planes includes at least good block in at least one different block of non-volatile memory cells. The partial superblock memory management component can perform an operation to reallocate the at least one good block in the plane to the at least one bad block in the plane to form blocks of non-volatile memory cells having a quantity of bad blocks that satisfies a bad block threshold.

公开(公告)号：US20220413699A1

公开(公告)日：2022-12-29

申请号：US17362542

申请日：2021-06-29

Applicant: Micron Technology, Inc.

Inventor： Xiangang Luo ,  Ashutosh Malshe ,  Huachen Li ,  Giuseppe D'eliseo ,  Jianmin Huang

IPC: G06F3/06

Abstract: An apparatus can include a partial superblock memory management component. The partial superblock memory management component can identify bad blocks in respective planes of a block of non-volatile memory cells. The partial superblock memory management component can determine that a plane of the respective planes includes at least good block in at least one different block of non-volatile memory cells. The partial superblock memory management component can perform an operation to reallocate the at least one good block in the plane to the at least one bad block in the plane to form blocks of non-volatile memory cells having a quantity of bad blocks that satisfies a bad block threshold.