公开(公告)号：US10381075B2

公开(公告)日：2019-08-13

申请号：US15842504

申请日：2017-12-14

Applicant: Micron Technology, Inc.

Inventor： Innocenzo Totorelli ,  Andrea Redaelli ,  Agostino Pirovano ,  Fabio Pellizzer ,  Mario Allegra ,  Paolo Fantini

IPC: G11C13/02 ,  G11C7/00 ,  G11C13/00 ,  G11C11/56 ,  H01L27/24 ,  H01L45/00

Abstract: Methods, systems, and devices related to techniques to access a self-selecting memory device are described. A self-selecting memory cell may store one or more bits of data represented by different threshold voltages of the self-selecting memory cell. A programming pulse may be varied to establish the different threshold voltages by modifying one or more time durations during which a fixed level of voltage or current is maintained across the self-selecting memory cell. The self-selecting memory cell may include a chalcogenide alloy. A non-uniform distribution of an element in the chalcogenide alloy may determine a particular threshold voltage of the self-selecting memory cell. The shape of the programming pulse may be configured to modify a distribution of the element in the chalcogenide alloy based on a desired logic state of the self-selecting memory cell.