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公开(公告)号：US10600796B2
公开(公告)日：2020-03-24
申请号：US15624422
申请日：2017-06-15
IPC分类号： H01L21/3213 , H01L27/11556 , H01L21/311 , H01L27/11582 , G03F7/00
摘要： Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.
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公开(公告)号：US20210167079A1
公开(公告)日：2021-06-03
申请号：US17173405
申请日：2021-02-11
IPC分类号： H01L27/11556 , H01L21/3213 , H01L21/311
摘要： Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.
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公开(公告)号：US20180366481A1
公开(公告)日：2018-12-20
申请号：US15624422
申请日：2017-06-15
IPC分类号： H01L27/11556 , H01L27/11582 , H01L21/3213 , H01L21/311
摘要： Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.
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公开(公告)号：US20230354595A1
公开(公告)日：2023-11-02
申请号：US18332919
申请日：2023-06-12
IPC分类号： H10B41/27 , H01L21/3213 , H01L21/311
CPC分类号： H10B41/27 , H01L21/32139 , H01L21/31144 , G03F7/0035
摘要： Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.
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公开(公告)号：US11678481B2
公开(公告)日：2023-06-13
申请号：US17173405
申请日：2021-02-11
IPC分类号： H01L21/311 , H01L27/11556 , H01L21/3213 , H01L27/11582 , G03F7/00
CPC分类号： H01L27/11556 , H01L21/31144 , H01L21/32139 , G03F7/0035 , H01L27/11582
摘要： Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.
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公开(公告)号：US10930659B2
公开(公告)日：2021-02-23
申请号：US16531815
申请日：2019-08-05
IPC分类号： H01L27/11556 , H01L21/3213 , H01L21/311 , H01L27/11582 , G03F7/00
摘要： Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.
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7.发明申请公开(公告)号：US20190355735A1
公开(公告)日：2019-11-21
申请号：US16531815
申请日：2019-08-05
IPC分类号： H01L27/11556 , H01L21/311 , H01L21/3213
摘要： Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.
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