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公开(公告)号：US10600796B2
公开(公告)日：2020-03-24
申请号：US15624422
申请日：2017-06-15
IPC分类号： H01L21/3213 , H01L27/11556 , H01L21/311 , H01L27/11582 , G03F7/00
摘要： Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.
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公开(公告)号：US11889695B2
公开(公告)日：2024-01-30
申请号：US17504313
申请日：2021-10-18
发明人： Paolo Tessariol , Justin B. Dorhout , Indra V. Chary , Jun Fang , Matthew Park , Zhiqiang Xie , Scott D. Stull , Daniel Osterberg , Jason Reece , Jian Li
IPC分类号： H01L27/11582 , H10B43/27 , H01L21/768 , H01L21/311 , H01L23/528 , H01L21/02 , H01L29/10 , H01L23/522 , H10B41/27 , H10B43/50 , H10B41/35 , H10B43/10
CPC分类号： H10B43/27 , H01L21/02636 , H01L21/31111 , H01L21/76802 , H01L21/76877 , H01L21/76895 , H01L23/528 , H01L23/5226 , H01L29/1037 , H10B41/27 , H10B41/35 , H10B43/50 , H10B43/10
摘要： A device comprises an array of elevationally-extending transistors and a circuit structure adjacent and electrically coupled to the elevationally-extending transistors of the array. The circuit structure comprises a stair step structure comprising vertically-alternating tiers comprising conductive steps that are at least partially elevationally separated from one another by insulative material. Operative conductive vias individually extend elevationally through one of the conductive steps at least to a bottom of the vertically-alternating tiers and individually electrically couple to an electronic component below the vertically-alternating tiers. Dummy structures individually extend elevationally through one of the conductive steps at least to the bottom of the vertically-alternating tiers. Methods are also disclosed.
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公开(公告)号：US20190081061A1
公开(公告)日：2019-03-14
申请号：US15705179
申请日：2017-09-14
发明人： Paolo Tessariol , Justin B. Dorhout , Indra V. Chary , Jun Fang , Matthew Park , Zhiqiang Xie , Scott D. Stull , Daniel Osterberg , Jason Reece , Jian Li
IPC分类号： H01L27/11582 , H01L21/768 , H01L21/311 , H01L27/11556 , H01L21/02 , H01L29/10 , H01L23/522 , H01L23/528
摘要： A device comprises an array of elevationally-extending transistors and a circuit structure adjacent and electrically coupled to the elevationally-extending transistors of the array. The circuit structure comprises a stair step structure comprising vertically-alternating tiers comprising conductive steps that are at least partially elevationally separated from one another by insulative material. Operative conductive vias individually extend elevationally through one of the conductive steps at least to a bottom of the vertically-alternating tiers and individually electrically couple to an electronic component below the vertically-alternating tiers. Dummy structures individually extend elevationally through one of the conductive steps at least to the bottom of the vertically-alternating tiers. Methods are also disclosed.
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公开(公告)号：US20220037360A1
公开(公告)日：2022-02-03
申请号：US17504313
申请日：2021-10-18
发明人： Paolo Tessariol , Justin B. Dorhout , Indra V. Chary , Jun Fang , Matthew Park , Zhiqiang Xie , Scott D. Stull , Daniel Osterberg , Jason Reece , Jian Li
IPC分类号： H01L27/11582 , H01L21/768 , H01L21/311 , H01L23/528 , H01L27/11556 , H01L21/02 , H01L29/10 , H01L23/522 , H01L27/11575
摘要： A device comprises an array of elevationally-extending transistors and a circuit structure adjacent and electrically coupled to the elevationally-extending transistors of the array. The circuit structure comprises a stair step structure comprising vertically-alternating tiers comprising conductive steps that are at least partially elevationally separated from one another by insulative material. Operative conductive vias individually extend elevationally through one of the conductive steps at least to a bottom of the vertically-alternating tiers and individually electrically couple to an electronic component below the vertically-alternating tiers. Dummy structures individually extend elevationally through one of the conductive steps at least to the bottom of the vertically-alternating tiers. Methods are also disclosed.
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5.发明授权公开(公告)号：US11114379B2
公开(公告)日：2021-09-07
申请号：US15995475
申请日：2018-06-01
发明人： Michael J. Gossman , M. Jared Barclay , Matthew J. King , Eldon Nelson , Matthew Park , Jason Reece , Lifang Xu , Bo Zhao
IPC分类号： H01L23/528 , H01L27/11556 , H01L27/11582 , H01L27/11524 , H01L27/1157 , H01L27/11548 , H01L23/522 , H01L21/768 , H01L27/11575 , H01L27/11573 , H01L27/11529
摘要： A method used in forming integrated circuitry comprises forming a stack of vertically-alternating tiers of different composition materials. A stair-step structure is formed into the stack and an upper landing is formed adjacent and above the stair-step structure. The stair-step structure is formed to comprise vertically-alternating tiers of the different composition materials. A plurality of stairs individually comprise two of the tiers of different composition materials. At least some of the stairs individually have only two tiers that are each only of a different one of the different composition materials. An upper of the stairs that is below the upper landing comprises at least four of the tiers of different composition materials. Structure independent of method is disclosed.
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公开(公告)号：US11177271B2
公开(公告)日：2021-11-16
申请号：US15705179
申请日：2017-09-14
发明人： Paolo Tessariol , Justin B. Dorhout , Indra V. Chary , Jun Fang , Matthew Park , Zhiqiang Xie , Scott D. Stull , Daniel Osterberg , Jason Reece , Jian Li
IPC分类号： H01L27/11582 , H01L21/768 , H01L21/311 , H01L23/528 , H01L27/11556 , H01L21/02 , H01L29/10 , H01L23/522 , H01L27/11575 , H01L27/11565
摘要： A device comprises an array of elevationally-extending transistors and a circuit structure adjacent and electrically coupled to the elevationally-extending transistors of the array. The circuit structure comprises a stair step structure comprising vertically-alternating tiers comprising conductive steps that are at least partially elevationally separated from one another by insulative material. Operative conductive vias individually extend elevationally through one of the conductive steps at least to a bottom of the vertically-alternating tiers and individually electrically couple to an electronic component below the vertically-alternating tiers. Dummy structures individually extend elevationally through one of the conductive steps at least to the bottom of the vertically-alternating tiers. Methods are also disclosed.
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公开(公告)号：US20210167079A1
公开(公告)日：2021-06-03
申请号：US17173405
申请日：2021-02-11
IPC分类号： H01L27/11556 , H01L21/3213 , H01L21/311
摘要： Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.
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公开(公告)号：US20180366481A1
公开(公告)日：2018-12-20
申请号：US15624422
申请日：2017-06-15
IPC分类号： H01L27/11556 , H01L27/11582 , H01L21/3213 , H01L21/311
摘要： Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.
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公开(公告)号：US20230354595A1
公开(公告)日：2023-11-02
申请号：US18332919
申请日：2023-06-12
IPC分类号： H10B41/27 , H01L21/3213 , H01L21/311
CPC分类号： H10B41/27 , H01L21/32139 , H01L21/31144 , G03F7/0035
摘要： Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.
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公开(公告)号：US11678481B2
公开(公告)日：2023-06-13
申请号：US17173405
申请日：2021-02-11
IPC分类号： H01L21/311 , H01L27/11556 , H01L21/3213 , H01L27/11582 , G03F7/00
CPC分类号： H01L27/11556 , H01L21/31144 , H01L21/32139 , G03F7/0035 , H01L27/11582
摘要： Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.
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