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公开(公告)号:US20230335199A1
公开(公告)日:2023-10-19
申请号:US17659755
申请日:2022-04-19
CPC分类号: G11C16/22 , G11C16/0483 , G11C16/26 , G11C16/3445 , G11C16/10 , G11C16/3418 , G06F12/1458 , G06F2212/1052
摘要: A memory device may be configured to perform an erase verify read operation to read from a plurality of access lines of a block of memory. The memory device may be configured to determine, based on performing the erase verify read operation, a quantity of access lines for which a corresponding page has been programmed, wherein each access line provides access to one or more pages of memory. The memory device may be configured to identify a most recently programmed page of the block of memory based on the determined quantity of access lines.
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公开(公告)号:US20230384951A1
公开(公告)日:2023-11-30
申请号:US17804153
申请日:2022-05-26
发明人: Jeremy BINFET , Lance Walker DOVER , Robert William STRONG , Walter DI FRANCESCO , Tommaso VALI , Jeffrey Scott MCNEIL, JR.
IPC分类号: G06F3/06
CPC分类号: G06F3/0622 , G06F3/0659 , G06F3/0679
摘要: A memory device may be configured to receive a command to access a block of memory that is one of multiple blocks of memory included in the memory device. The memory device may be configured to receive a cryptographic signature associated with the command. The memory device may be configured to enable or disable access to the block of memory based on the command and based on the cryptographic signature. The memory device may be capable of separately restricting access to each individual block of the multiple blocks.
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