公开(公告)号：US11158387B1

公开(公告)日：2021-10-26

申请号：US16941894

申请日：2020-07-29

Applicant: Micron Technology, Inc.

Inventor： Deping He ,  Jingyuan Miao

IPC: G11C11/34 ,  G11C16/26 ,  G11C11/56

Abstract: Methods, systems, and devices for techniques for determining memory cell read offsets are described to support determining voltage offsets and corresponding read voltage levels for one or more memory cell levels using a relationship between read voltage levels and voltage offsets. A memory device may estimate first voltage offsets using a first procedure and may perform a read operation using the first voltage offsets. If a first voltage offset results in a read error for a corresponding memory cell level, the memory device may determine an updated voltage offset using the relationship. The relationship may predict a voltage offset for a given read voltage level, such that the memory device may use the relationship to predict an updated voltage offset for a memory cell level. The memory device may use the updated voltage offset(s) to perform a second read operation for the one or more memory cells.

公开(公告)号：US11721398B2

公开(公告)日：2023-08-08

申请号：US17502497

申请日：2021-10-15

Applicant: Micron Technology, Inc.

Inventor： Deping He ,  Jingyuan Miao

IPC: G11C11/34 ,  G11C16/26 ,  G11C11/56

CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C11/5671

Abstract: Methods, systems, and devices for techniques for determining memory cell read offsets are described to support determining voltage offsets and corresponding read voltage levels for one or more memory cell levels using a relationship between read voltage levels and voltage offsets. A memory device may estimate first voltage offsets using a first procedure and may perform a read operation using the first voltage offsets. If a first voltage offset results in a read error for a corresponding memory cell level, the memory device may determine an updated voltage offset using the relationship. The relationship may predict a voltage offset for a given read voltage level, such that the memory device may use the relationship to predict an updated voltage offset for a memory cell level. The memory device may use the updated voltage offset(s) to perform a second read operation for the one or more memory cells.

公开(公告)号：US20220300208A1

公开(公告)日：2022-09-22

申请号：US17631201

申请日：2021-03-18

Applicant: Micron Technology, Inc.

Inventor： Deping He ,  Jonathan S. Parry ,  Jingyuan Miao ,  Bin Zhao

IPC: G06F3/06

Abstract: Methods, systems, and devices for memory read performance techniques are described. A memory system may receive a sequence of read commands. Based on detecting a set of consecutive read commands, the memory system may pre-read data from a second logical block address (LBA) in a non-volatile memory device to a volatile memory device based on receiving a first read command that includes a first LBA, where the second LBA is consecutive with the first LBA. The memory system may subsequently receive a second read command that includes the second LBA, and read out the second data without performing an additional access operation of the non-volatile storage device. In some examples, using such a pre-read, the memory system may capable of returning data in a different order than the order in which the commands were received.

公开(公告)号：US20220108753A1

公开(公告)日：2022-04-07

申请号：US17502497

申请日：2021-10-15

Applicant: Micron Technology, Inc.

Inventor： Deping He ,  Jingyuan Miao

IPC: G11C16/26 ,  G11C11/56

Abstract: Methods, systems, and devices for techniques for determining memory cell read offsets are described to support determining voltage offsets and corresponding read voltage levels for one or more memory cell levels using a relationship between read voltage levels and voltage offsets. A memory device may estimate first voltage offsets using a first procedure and may perform a read operation using the first voltage offsets. If a first voltage offset results in a read error for a corresponding memory cell level, the memory device may determine an updated voltage offset using the relationship. The relationship may predict a voltage offset for a given read voltage level, such that the memory device may use the relationship to predict an updated voltage offset for a memory cell level. The memory device may use the updated voltage offset(s) to perform a second read operation for the one or more memory cells.