公开(公告)号：US20210366540A1

公开(公告)日：2021-11-25

申请号：US17394778

申请日：2021-08-05

Applicant: Micron Technology, Inc.

Inventor： Josephine Tiu Hamada ,  Kenneth Richard Surdyk ,  Lingming Yang ,  Mingdong Cui

IPC: G11C11/56 ,  G11C11/4074

Abstract: An integrated circuit memory device, having: a first wire; a second wire; a memory cell connected between the first wire and the second wire; a first voltage driver connected to the first wire; and a second voltage driver connected to the second wire. During an operation to read the memory cell, the second voltage driver is configured to start ramping up a voltage applied on the second wire after the first voltage driver starts ramping up and holding a voltage applied on the first wire.

公开(公告)号：US11587614B2

公开(公告)日：2023-02-21

申请号：US17394778

申请日：2021-08-05

Applicant: Micron Technology, Inc.

Inventor： Josephine Tiu Hamada ,  Kenneth Richard Surdyk ,  Lingming Yang ,  Mingdong Cui

IPC: G11C11/16 ,  G11C11/56 ,  G11C11/4074

Abstract: An integrated circuit memory device, having: a first wire; a second wire; a memory cell connected between the first wire and the second wire; a first voltage driver connected to the first wire; and a second voltage driver connected to the second wire. During an operation to read the memory cell, the second voltage driver is configured to start ramping up a voltage applied on the second wire after the first voltage driver starts ramping up and holding a voltage applied on the first wire.

公开(公告)号：US11114156B2

公开(公告)日：2021-09-07

申请号：US16660569

申请日：2019-10-22

Applicant: Micron Technology, Inc.

Inventor： Josephine Tiu Hamada ,  Kenneth Richard Surdyk ,  Lingming Yang ,  Mingdong Cui

IPC: G11C11/16 ,  G11C11/56 ,  G11C11/4074

Abstract: An integrated circuit memory device, having: a first wire; a second wire; a memory cell connected between the first wire and the second wire; a first voltage driver connected to the first wire; and a second voltage driver connected to the second wire. During an operation to read the memory cell, the second voltage driver is configured to start ramping up a voltage applied on the second wire after the first voltage driver starts ramping up and holding a voltage applied on the first wire.

公开(公告)号：US20210118497A1

公开(公告)日：2021-04-22

申请号：US16660569

申请日：2019-10-22

Applicant: Micron Technology, Inc.

Inventor： Josephine Tiu Hamada ,  Kenneth Richard Surdyk ,  Lingming Yang ,  Mingdong Cui

IPC: G11C11/56 ,  G11C11/4074

Abstract: An integrated circuit memory device, having: a first wire; a second wire; a memory cell connected between the first wire and the second wire; a first voltage driver connected to the first wire; and a second voltage driver connected to the second wire. During an operation to read the memory cell, the second voltage driver is configured to start ramping up a voltage applied on the second wire after the first voltage driver starts ramping up and holding a voltage applied on the first wire.