公开(公告)号：US20040106299A1

公开(公告)日：2004-06-03

申请号：US10721147

申请日：2003-11-25

Applicant: Micron Technology, Inc.

Inventor： Michael A. Walker ,  Karl M. Robinson

IPC: H01L021/302

CPC classification number: H01L21/76895 ,  H01L21/743 ,  H01L21/76897 ,  H01L23/535 ,  H01L27/10855 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A sacrificial, self-aligned polysilicon interconnect structure is formed in a region of insulating material to the side of an active region location and underlying a semiconductor device of a substrate assembly in order to electrically connect the active region and the semiconductor device. A method for making the interconnect structure maintains a preexisting geometry of the active region during etching of an interconnect structure hole in which the interconnect structure is formed and saves process steps. Under the method, a region of insulating material is formed immediately adjacent the active region location. A nitride layer is formed over the active region and protects the active region while an interconnect structure hole is etched partially into the region of insulating material adjacent the active region location with an etching process that is selective to the nitride layer. The interconnect structure hole is filled with polysilicon, the surface of the substrate assembly is planarized, and the nitride layer is removed.

Abstract translation: 牺牲的自对准多晶硅互连结构形成在绝缘材料的区域到有源区位置的侧面并且位于衬底组件的半导体器件的下方，以便电连接有源区域和半导体器件。 用于制造互连结构的方法在蚀刻形成互连结构的互连结构孔期间保持有源区的预先存在的几何形状，并且节省了工艺步骤。 在该方法下，绝缘材料的区域紧邻有源区位置形成。 在有源区上形成氮化物层并保护有源区，同时利用对氮化物层有选择性的蚀刻工艺将互连结构孔部分地蚀刻到与有源区位置相邻的绝缘材料区域内。 互连结构孔填充有多晶硅，衬底组件的表面被平坦化，并且氮化物层被去除。

公开(公告)号：US20020185628A1

公开(公告)日：2002-12-12

申请号：US10167564

申请日：2002-06-11

Applicant: Micron Technology, Inc.

Inventor： Karl M. Robinson ,  Whonchee Lee

IPC: C09K013/00

CPC classification number: B24B37/04 ,  B24B57/02 ,  C09G1/02

Abstract: A composition and method of construction and use therefor in chemical-mechanical polishing (nullCMPnull) of one or more substrate assemblies is described. More particularly, a polishing solution comprising etchant, abrasive particles, and surfactant and methods of mixing to form and to dispense the polishing solution are described. One or more of the etchant, abrasive particles, and/or surfactant may comprise a liquid medium. Etchant, surfactant or abrasive particles may be premixed, mixed in-situ (nullpoint of use mixingnull), or any combination thereof. The surfactant may be ionic or nonionic. In particular, a polyoxyethylene may be used, and more particularly, a polyoxyethylene ester or ether may be used.

Abstract translation: 描述了一种或多种基板组件的化学机械抛光（“CMP”）的构造和用途的组合物和方法。 更具体地，描述了包括蚀刻剂，磨料颗粒和表面活性剂的抛光溶液以及混合以形成和分配抛光溶液的方法。 蚀刻剂，磨料颗粒和/或表面活性剂中的一种或多种可以包含液体介质。 蚀刻剂，表面活性剂或磨料颗粒可以预混合，原位混合（“使用点混合”）或其任何组合。 表面活性剂可以是离子的或非离子的。 特别地，可以使用聚氧乙烯，更具体地可以使用聚氧乙烯酯或醚。

公开(公告)号：US20020072302A1

公开(公告)日：2002-06-13

申请号：US09961624

申请日：2001-09-24

Applicant: Micron Technology, Inc.

Inventor： Karl M. Robinson

IPC: B24B049/00

CPC classification number: B24B37/26 ,  B24D3/28 ,  B24D11/00 ,  B24D13/142

Abstract: Method and apparatus for increasing chemical-mechanical-polishing (CMP) selectivity is described. A CMP pad is formed having a pattern of recesses and islands to provide non-contact portions and contact portions, respectively, with respect to contacting a substrate assembly surface to be polished. As the CMP pad is formed from a non-porous material, chemical and mechanical components of material removal are parsed to the non-contact portions and the contact portions, respectively. The relationship or spacing from one contact island to another, or, alternatively viewed, from one non-contact recess to another, provides a duty cycle, which is tailored to increase selectivity for removal of one or more materials over removal of one or more other materials during CMP of a substrate assembly.

Abstract translation: 描述了增加化学机械抛光（CMP）选择性的方法和装置。 形成具有凹槽和岛状图案的CMP垫，以相对于接触待抛光的基底组件表面分别提供非接触部分和接触部分。 由于CMP垫是由无孔材料形成的，材料去除的化学和机械部件分别被分析到非接触部分和接触部分。 从一个接触岛到另一个接触岛的关系或间隔，或者从一个非接触凹槽到另一个非接触凹槽的间隔的关系或间隔提供占空比，该占空比适于提高在除去一种或多种其它物质之后去除一种或多种材料的选择性 衬底组件的CMP期间的材料。

公开(公告)号：US20010014571A1

公开(公告)日：2001-08-16

申请号：US09800711

申请日：2001-03-07

Applicant: Micron Technology, Inc.

Inventor： Karl M. Robinson

IPC: B24B007/22

CPC classification number: B24B37/26 ,  B24D3/28 ,  B24D11/00 ,  B24D13/142

Abstract: Method and apparatus for increasing chemical-mechanical-polishing (CMP) selectivity is described. A CMP pad is formed having a pattern of recesses and islands to provide non-contact portions and contact portions, respectively, with respect to contacting a substrate assembly surface to be polished. As the CMP pad is formed from a non-porous material, chemical and mechanical components of material removal are parsed to the non-contact portions and the contact portions, respectively. The relationship or spacing from one contact island to another, or, alternatively viewed, from one non-contact recess to another, provides a duty cycle, which is tailored to increase selectivity for removal of one or more materials over removal of one or more other materials during CMP of a substrate assembly.