公开(公告)号：US20230343815A1

公开(公告)日：2023-10-26

申请号：US17726965

申请日：2022-04-22

Applicant: Micron Technology, Inc.

Inventor： Ryan L. Meyer ,  Vinay Nair ,  Andrea Gotti ,  Kevin Shea ,  Kyle R. Knori

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/60 ,  H01L27/1085

Abstract: Methods, apparatuses, and systems related to depositing a storage node material are described. An example method includes forming a semiconductor structure including a support structure having a first silicate material over a bottom nitride material, a first nitride material over the first silicate material, a second silicate material over the first nitride material, and a second nitride material over the second silicate material. The method further includes removing portions of the second nitride material. The method further includes depositing a third silicate material over the second nitride material and a portion of the second silicate material. The method further includes forming an opening through the semiconductor structure. The method further includes depositing a storage node material within the opening.